{"id":"https://openalex.org/W2610722415","doi":"https://doi.org/10.1109/isqed.2017.7918289","title":"Test challenges in embedded STT-MRAM arrays","display_name":"Test challenges in embedded STT-MRAM arrays","publication_year":2017,"publication_date":"2017-03-01","ids":{"openalex":"https://openalex.org/W2610722415","doi":"https://doi.org/10.1109/isqed.2017.7918289","mag":"2610722415"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2017.7918289","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2017.7918289","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 18th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009310657","display_name":"Insik Yoon","orcid":"https://orcid.org/0000-0003-4545-4404"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Insik Yoon","raw_affiliation_strings":["School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia"],"affiliations":[{"raw_affiliation_string":"School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5091408102","display_name":"Arijit Raychowdhury","orcid":"https://orcid.org/0000-0001-8391-0576"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Arijit Raychowdhury","raw_affiliation_strings":["School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia"],"affiliations":[{"raw_affiliation_string":"School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5009310657"],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":0.7315,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.71525456,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"98","issue":null,"first_page":"35","last_page":"38"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8545119166374207},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.7787846922874451},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7119787931442261},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5458441972732544},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.472141295671463},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.43676117062568665},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3841014504432678},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3427199721336365},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2208581268787384},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1697196662425995}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8545119166374207},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.7787846922874451},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7119787931442261},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5458441972732544},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.472141295671463},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.43676117062568665},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3841014504432678},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3427199721336365},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2208581268787384},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1697196662425995},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2017.7918289","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2017.7918289","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 18th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1999151859","https://openalex.org/W2012923077","https://openalex.org/W2040579068","https://openalex.org/W2047379549","https://openalex.org/W2061761071","https://openalex.org/W2075278406","https://openalex.org/W2089301809","https://openalex.org/W2108048675","https://openalex.org/W2294313946","https://openalex.org/W2337180699","https://openalex.org/W2568019164","https://openalex.org/W2626765552","https://openalex.org/W3152241699"],"related_works":["https://openalex.org/W2110321764","https://openalex.org/W3109940112","https://openalex.org/W3133379968","https://openalex.org/W4403122749","https://openalex.org/W2171162600","https://openalex.org/W2783549708","https://openalex.org/W2036350002","https://openalex.org/W2002108625","https://openalex.org/W2342993049","https://openalex.org/W2810613542"],"abstract_inverted_index":{"Spin":[0],"Transfer":[1],"Torque":[2],"Magnetic":[3],"Random":[4],"Access":[5],"Memory":[6],"(STT-MRAM)":[7],"is":[8,56],"an":[9],"emerging":[10],"memory":[11],"technology":[12],"which":[13],"exhibits":[14],"non-volatility,":[15],"high":[16],"density":[17],"and":[18,21,39,53,62,105,114,122,133,136],"nanosecond":[19],"read":[20],"write":[22],"times.":[23],"These":[24],"attributes":[25],"of":[26,43,69,83,101,131],"STT-MRAM":[27,44,84,94],"make":[28],"it":[29],"suitable":[30],"for":[31,60,81,89,125,141],"last":[32],"level":[33],"embedded":[34,93],"caches.":[35],"However,":[36],"the":[37,102,129],"defects":[38,135],"corresponding":[40],"fault":[41,63,106],"models":[42],"are":[45],"not":[46],"as":[47,50,108,110],"extensively":[48],"explored":[49],"in":[51,75,120],"SRAM":[52],"therefore,":[54],"there":[55],"a":[57,72,91,99,111],"growing":[58],"need":[59,85],"defect":[61,104],"analysis.":[64],"Moreover,":[65],"stochastic":[66],"retention":[67,82,138],"failure":[68],"STTM-RAM":[70],"imposes":[71],"large":[73],"burden":[74],"testing":[76,90,118],"time.":[77],"Conventional":[78],"test":[79,139],"schemes":[80],"to":[86,116],"be":[87],"optimized":[88],"large-size":[92],"array.":[95],"This":[96],"work":[97],"presents":[98],"review":[100],"different":[103],"mechanisms":[107],"well":[109],"BIST":[112],"architecture":[113],"circuit":[115],"reduce":[117],"time":[119],"characterization":[121],"manufacturing":[123],"tests":[124],"retention.":[126,145],"We":[127],"address":[128],"effect":[130],"resistive":[132],"capacitive":[134],"identify":[137],"setup":[140],"measuring":[142],"worst":[143],"case":[144]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}