{"id":"https://openalex.org/W2610348679","doi":"https://doi.org/10.1109/isqed.2017.7918283","title":"Electrical modeling and analysis of 3D synaptic array using vertical RRAM structure","display_name":"Electrical modeling and analysis of 3D synaptic array using vertical RRAM structure","publication_year":2017,"publication_date":"2017-03-01","ids":{"openalex":"https://openalex.org/W2610348679","doi":"https://doi.org/10.1109/isqed.2017.7918283","mag":"2610348679"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2017.7918283","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2017.7918283","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 18th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5028297277","display_name":"Hongyu An","orcid":"https://orcid.org/0000-0002-2350-9411"},"institutions":[{"id":"https://openalex.org/I146416000","display_name":"University of Kansas","ror":"https://ror.org/001tmjg57","country_code":"US","type":"education","lineage":["https://openalex.org/I146416000"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Hongyu An","raw_affiliation_strings":["Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, 66405, United States of America","Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, KS"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, 66405, United States of America","institution_ids":["https://openalex.org/I146416000"]},{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, KS","institution_ids":["https://openalex.org/I146416000"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101776546","display_name":"M. Amimul Ehsan","orcid":"https://orcid.org/0000-0001-5634-1005"},"institutions":[{"id":"https://openalex.org/I146416000","display_name":"University of Kansas","ror":"https://ror.org/001tmjg57","country_code":"US","type":"education","lineage":["https://openalex.org/I146416000"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Amimul Ehsan","raw_affiliation_strings":["Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, 66405, United States of America","University of Kansas, Lawrence, KS, US"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, 66405, United States of America","institution_ids":["https://openalex.org/I146416000"]},{"raw_affiliation_string":"University of Kansas, Lawrence, KS, US","institution_ids":["https://openalex.org/I146416000"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100636124","display_name":"Zhen Zhou","orcid":"https://orcid.org/0000-0002-7371-2100"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zhen Zhou","raw_affiliation_strings":["Intel Corporation, 3600 Juliette Ln, Santa Clara, CA 95054, USA","Intel Corporation, Santa Clara, CA, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation, 3600 Juliette Ln, Santa Clara, CA 95054, USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5018632091","display_name":"Yang Yi","orcid":"https://orcid.org/0000-0002-1354-0204"},"institutions":[{"id":"https://openalex.org/I146416000","display_name":"University of Kansas","ror":"https://ror.org/001tmjg57","country_code":"US","type":"education","lineage":["https://openalex.org/I146416000"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yang Yi","raw_affiliation_strings":["Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, 66405, United States of America","Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, KS"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, 66405, United States of America","institution_ids":["https://openalex.org/I146416000"]},{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, KS","institution_ids":["https://openalex.org/I146416000"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5028297277"],"corresponding_institution_ids":["https://openalex.org/I146416000"],"apc_list":null,"apc_paid":null,"fwci":1.1653,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.79824172,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.9264557957649231},{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.8828494548797607},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.7500749826431274},{"id":"https://openalex.org/keywords/massively-parallel","display_name":"Massively parallel","score":0.6635880470275879},{"id":"https://openalex.org/keywords/three-dimensional-integrated-circuit","display_name":"Three-dimensional integrated circuit","score":0.6324883103370667},{"id":"https://openalex.org/keywords/footprint","display_name":"Footprint","score":0.6323797106742859},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6064310669898987},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5186323523521423},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.4770231246948242},{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.46333515644073486},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.45016416907310486},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4328765273094177},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.4304199516773224},{"id":"https://openalex.org/keywords/computer-architecture","display_name":"Computer architecture","score":0.37313205003738403},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3178243637084961},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.28094878792762756},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.21718519926071167},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.19881975650787354},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1776459813117981},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.16492989659309387},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.12902683019638062}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.9264557957649231},{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.8828494548797607},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.7500749826431274},{"id":"https://openalex.org/C190475519","wikidata":"https://www.wikidata.org/wiki/Q544384","display_name":"Massively parallel","level":2,"score":0.6635880470275879},{"id":"https://openalex.org/C59088047","wikidata":"https://www.wikidata.org/wiki/Q229370","display_name":"Three-dimensional integrated circuit","level":3,"score":0.6324883103370667},{"id":"https://openalex.org/C132943942","wikidata":"https://www.wikidata.org/wiki/Q2562511","display_name":"Footprint","level":2,"score":0.6323797106742859},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6064310669898987},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5186323523521423},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.4770231246948242},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.46333515644073486},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.45016416907310486},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4328765273094177},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.4304199516773224},{"id":"https://openalex.org/C118524514","wikidata":"https://www.wikidata.org/wiki/Q173212","display_name":"Computer architecture","level":1,"score":0.37313205003738403},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3178243637084961},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.28094878792762756},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.21718519926071167},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.19881975650787354},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1776459813117981},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16492989659309387},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.12902683019638062},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C31972630","wikidata":"https://www.wikidata.org/wiki/Q844240","display_name":"Computer vision","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2017.7918283","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2017.7918283","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 18th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6299999952316284,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W1596998040","https://openalex.org/W1603614306","https://openalex.org/W1604973310","https://openalex.org/W1664071020","https://openalex.org/W1967744327","https://openalex.org/W1969908552","https://openalex.org/W1975398991","https://openalex.org/W1977655281","https://openalex.org/W1996247052","https://openalex.org/W1998177673","https://openalex.org/W2032401230","https://openalex.org/W2081394011","https://openalex.org/W2089979174","https://openalex.org/W2094694479","https://openalex.org/W2102397476","https://openalex.org/W2112181056","https://openalex.org/W2130360162","https://openalex.org/W2142998566","https://openalex.org/W2147550080","https://openalex.org/W2153041354","https://openalex.org/W2163288878","https://openalex.org/W2163630896","https://openalex.org/W2164653071","https://openalex.org/W2334779698","https://openalex.org/W2338037132","https://openalex.org/W2399958287","https://openalex.org/W2518320872","https://openalex.org/W2550656139","https://openalex.org/W2581431263","https://openalex.org/W4230899136","https://openalex.org/W4253687614","https://openalex.org/W6635836132","https://openalex.org/W6642801916","https://openalex.org/W6672645840","https://openalex.org/W6681923470"],"related_works":["https://openalex.org/W1872623660","https://openalex.org/W4292697011","https://openalex.org/W3207218810","https://openalex.org/W3212508523","https://openalex.org/W4386475142","https://openalex.org/W1995352804","https://openalex.org/W2086672837","https://openalex.org/W2793181810","https://openalex.org/W2016922062","https://openalex.org/W4367187682"],"abstract_inverted_index":{"Three-dimensional":[0],"(3D)":[1],"integrated":[2],"circuits":[3],"(ICs)":[4],"offer":[5],"a":[6,36,42,62],"promising":[7],"near-term":[8],"solution":[9],"for":[10,77],"pushing":[11],"beyond":[12],"Moore's":[13],"Law":[14],"because":[15],"of":[16,67,89],"their":[17],"compatibility":[18],"with":[19],"current":[20],"technology":[21,58],"while":[22],"providing":[23],"high":[24,27],"system":[25],"speed,":[26],"density,":[28],"massively":[29],"parallel":[30],"processing,":[31],"low":[32],"power":[33],"consumption,":[34],"and":[35,52,73],"small":[37],"footprint.":[38],"In":[39],"this":[40],"paper,":[41],"novel":[43],"3D":[44,50,92],"neuromorphic":[45,93],"IC":[46],"architecture":[47],"combining":[48],"monolithic":[49],"integration":[51],"vertical":[53],"resistive":[54],"random-access":[55],"memory":[56],"(V-RRAM)":[57],"is":[59,71,84,96],"proposed.":[60],"Furthermore,":[61],"concise":[63],"equivalent":[64,82],"circuit":[65,83],"model":[66],"the":[68,74,81,90],"proposed":[69,91],"structure":[70,95],"created":[72],"analytical":[75],"calculation":[76],"each":[78],"parameter":[79],"in":[80],"provided.":[85],"The":[86],"electrical":[87],"performance":[88],"computing":[94],"evaluated":[97],"through":[98],"SPICE":[99],"simulations.":[100]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":2}],"updated_date":"2026-03-25T13:04:00.132906","created_date":"2025-10-10T00:00:00"}