{"id":"https://openalex.org/W2408354206","doi":"https://doi.org/10.1109/isqed.2016.7479214","title":"Transistor design for 5nm and beyond: Slowing down electrons to speed up transistors","display_name":"Transistor design for 5nm and beyond: Slowing down electrons to speed up transistors","publication_year":2016,"publication_date":"2016-03-01","ids":{"openalex":"https://openalex.org/W2408354206","doi":"https://doi.org/10.1109/isqed.2016.7479214","mag":"2408354206"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2016.7479214","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2016.7479214","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 17th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023894514","display_name":"Victor Moroz","orcid":"https://orcid.org/0000-0002-5030-5457"},"institutions":[{"id":"https://openalex.org/I4210088951","display_name":"Synopsys (United States)","ror":"https://ror.org/013by2m91","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088951"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Victor Moroz","raw_affiliation_strings":["Synopsys, Inc., Mountain View, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Synopsys, Inc., Mountain View, CA, USA","institution_ids":["https://openalex.org/I4210088951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102062380","display_name":"Joanne Huang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210088951","display_name":"Synopsys (United States)","ror":"https://ror.org/013by2m91","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088951"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joanne Huang","raw_affiliation_strings":["Synopsys, Inc., Mountain View, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Synopsys, Inc., Mountain View, CA, USA","institution_ids":["https://openalex.org/I4210088951"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5060072772","display_name":"Reza Arghavani","orcid":null},"institutions":[{"id":"https://openalex.org/I4210139090","display_name":"Lam Research (United States)","ror":"https://ror.org/04gecbm52","country_code":"US","type":"company","lineage":["https://openalex.org/I4210139090"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Reza Arghavani","raw_affiliation_strings":["Lam Research, Fremont, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lam Research, Fremont, CA, USA","institution_ids":["https://openalex.org/I4210139090"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.6326,"has_fulltext":false,"cited_by_count":21,"citation_normalized_percentile":{"value":0.93719275,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"278","last_page":"283"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7800229787826538},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6191985607147217},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.6055024862289429},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5479030013084412},{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.543838620185852},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.526721715927124},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.49322742223739624},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.4925861954689026},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.424255907535553},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.3522735834121704},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3334991931915283},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.33167189359664917},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2668180465698242},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.105338454246521},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1052694022655487},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.10263341665267944},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10043087601661682},{"id":"https://openalex.org/keywords/geometry","display_name":"Geometry","score":0.08023568987846375}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7800229787826538},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6191985607147217},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.6055024862289429},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5479030013084412},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.543838620185852},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.526721715927124},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.49322742223739624},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4925861954689026},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.424255907535553},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.3522735834121704},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3334991931915283},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.33167189359664917},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2668180465698242},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.105338454246521},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1052694022655487},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.10263341665267944},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10043087601661682},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.08023568987846375}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2016.7479214","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2016.7479214","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 17th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.550000011920929,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1628829778","https://openalex.org/W1964567575","https://openalex.org/W1966797259","https://openalex.org/W1969236852","https://openalex.org/W1970587745","https://openalex.org/W1973155063","https://openalex.org/W1982556831","https://openalex.org/W2001894083","https://openalex.org/W2003591399","https://openalex.org/W2021848869","https://openalex.org/W2121349497","https://openalex.org/W2137227326","https://openalex.org/W2140361043","https://openalex.org/W2148720570","https://openalex.org/W2152224839","https://openalex.org/W2154937102","https://openalex.org/W2162538502","https://openalex.org/W2171161313","https://openalex.org/W2533113632","https://openalex.org/W6636682225","https://openalex.org/W6729303318"],"related_works":["https://openalex.org/W3143516596","https://openalex.org/W2089372549","https://openalex.org/W4300780679","https://openalex.org/W1669133231","https://openalex.org/W2804617689","https://openalex.org/W2033291290","https://openalex.org/W134694013","https://openalex.org/W2013679403","https://openalex.org/W2775410575","https://openalex.org/W2135546725"],"abstract_inverted_index":{"Analysis":[0,193],"of":[1,49,151,170,184,194],"the":[2,40,50,54,99,104,109,136,171,215,242],"key":[3,182],"band":[4,46],"structure":[5],"properties":[6,150],"for":[7,17,43,83,98,244,250],"MOSFET":[8],"channel":[9,45,216],"material":[10],"are":[11,87,167,209],"investigated":[12],"in":[13],"a":[14,79,94],"wide":[15],"range":[16,174],"nanowires":[18,203],"with":[19,59,204],"design":[20,67,75,207],"rules":[21,68,208],"scaling":[22,61,186],"from":[23,62],"5":[24,65,205],"nm":[25,66,74,146,206],"down":[26,135,141],"to":[27,38,70,103,120,123,133,142,158,198,214,225,234,240],"2":[28,73,145],"nm.":[29],"Three-dimensional":[30],"Non-Equilibrium":[31],"Green's":[32],"Functions":[33],"(NEGF)":[34],"method":[35],"is":[36,78,93,188,248],"employed":[37],"calculate":[39],"on-state":[41],"currents":[42],"different":[44],"structures.":[47],"Results":[48],"analysis":[51],"show":[52],"that":[53,86,202,247],"optimal":[55,126,172],"effective":[56,84],"mass":[57],"increases":[58],"transistor":[60,185,195],"0.1":[63],"at":[64,72,143],"up":[69],"0.4":[71],"rules.":[76],"There":[77],"gentle":[80],"performance":[81,96,196],"degradation":[82],"masses":[85],"heavier":[88],"than":[89,212,223],"optimal,":[90],"and":[91,149,175,231],"there":[92],"steep":[95],"penalty":[97],"lighter":[100],"electrons":[101],"due":[102],"direct":[105],"source-to-drain":[106],"tunneling":[107],"through":[108],"source":[110],"junction":[111],"barrier.":[112],"Different":[113],"Si":[114],"crystal":[115],"orientations":[116],"can":[117,130,237],"be":[118,131,238],"chosen":[119],"get":[121],"close":[122,157],"theoretically":[124],"possible":[125],"performance,":[127],"or":[128,165],"stress":[129],"used":[132,239],"slow":[134],"electrons.":[137],"Silicon":[138],"scales":[139],"well":[140],"least":[144],"technology":[147],"node,":[148],"typical":[152],"2D":[153],"materials":[154,162],"like":[155,163],"MoS2are":[156],"optimal.":[159],"However,":[160],"high-mobility":[161],"Ge":[164],"III-V":[166],"far":[168],"outside":[169],"property":[173],"do":[176],"not":[177],"scale":[178],"well.":[179],"One":[180],"other":[181],"aspect":[183],"potential":[187],"its":[189],"inherent":[190],"random":[191],"variability.":[192],"sensitivity":[197,233],"geometry":[199,235],"fluctuations":[200,236],"shows":[201],"less":[210],"sensitive":[211,222],"FinFETs":[213,224],"length":[217],"variation,":[218],"but":[219],"sharply":[220],"more":[221],"fin":[226],"width":[227],"variation.":[228],"Specific":[229],"FinFET":[230],"nanowire":[232,253],"determine":[241],"spec":[243],"future":[245],"equipment":[246],"necessary":[249],"high":[251],"yield":[252],"manufacturing.":[254]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}