{"id":"https://openalex.org/W2394816330","doi":"https://doi.org/10.1109/isqed.2016.7479149","title":"Optimizing SRAM bitcell reliability and energy for IoT applications","display_name":"Optimizing SRAM bitcell reliability and energy for IoT applications","publication_year":2016,"publication_date":"2016-03-01","ids":{"openalex":"https://openalex.org/W2394816330","doi":"https://doi.org/10.1109/isqed.2016.7479149","mag":"2394816330"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2016.7479149","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2016.7479149","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 17th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002610014","display_name":"Harsh N. Patel","orcid":"https://orcid.org/0000-0003-2836-479X"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Harsh N. Patel","raw_affiliation_strings":["University of Virginia, VA, USA"],"affiliations":[{"raw_affiliation_string":"University of Virginia, VA, USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085730440","display_name":"Farah B. Yahya","orcid":"https://orcid.org/0000-0001-6546-7232"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Farah B. Yahya","raw_affiliation_strings":["University of Virginia, VA, USA"],"affiliations":[{"raw_affiliation_string":"University of Virginia, VA, USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080557997","display_name":"Benton H. Calhoun","orcid":"https://orcid.org/0000-0002-3770-5050"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Benton H. Calhoun","raw_affiliation_strings":["University of Virginia, VA, USA"],"affiliations":[{"raw_affiliation_string":"University of Virginia, VA, USA","institution_ids":["https://openalex.org/I51556381"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5002610014"],"corresponding_institution_ids":["https://openalex.org/I51556381"],"apc_list":null,"apc_paid":null,"fwci":3.538,"has_fulltext":false,"cited_by_count":37,"citation_normalized_percentile":{"value":0.93044487,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"12","last_page":"17"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8829476833343506},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5983701944351196},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.5770545601844788},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5412388443946838},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.5321423411369324},{"id":"https://openalex.org/keywords/leverage","display_name":"Leverage (statistics)","score":0.5098196864128113},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.5058593153953552},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5000195503234863},{"id":"https://openalex.org/keywords/internet-of-things","display_name":"Internet of Things","score":0.45576509833335876},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.42192164063453674},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.34881776571273804},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3220391869544983},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.31923121213912964},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28336501121520996},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.28181734681129456},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22088900208473206},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.15559789538383484}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8829476833343506},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5983701944351196},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.5770545601844788},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5412388443946838},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.5321423411369324},{"id":"https://openalex.org/C153083717","wikidata":"https://www.wikidata.org/wiki/Q6535263","display_name":"Leverage (statistics)","level":2,"score":0.5098196864128113},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.5058593153953552},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5000195503234863},{"id":"https://openalex.org/C81860439","wikidata":"https://www.wikidata.org/wiki/Q251212","display_name":"Internet of Things","level":2,"score":0.45576509833335876},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.42192164063453674},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.34881776571273804},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3220391869544983},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.31923121213912964},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28336501121520996},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.28181734681129456},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22088900208473206},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.15559789538383484},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2016.7479149","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2016.7479149","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 17th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1967171495","https://openalex.org/W1995932919","https://openalex.org/W2002612140","https://openalex.org/W2033246483","https://openalex.org/W2037737201","https://openalex.org/W2075778001","https://openalex.org/W2087010589","https://openalex.org/W2095913060","https://openalex.org/W2109579847","https://openalex.org/W2127681166","https://openalex.org/W2128767249","https://openalex.org/W2316587969","https://openalex.org/W3139804307","https://openalex.org/W3148792909","https://openalex.org/W4252004518","https://openalex.org/W6660072010","https://openalex.org/W6674416592","https://openalex.org/W6678914670"],"related_works":["https://openalex.org/W2297319780","https://openalex.org/W2119312496","https://openalex.org/W2178217057","https://openalex.org/W4247460323","https://openalex.org/W1972800815","https://openalex.org/W2537086382","https://openalex.org/W2107909712","https://openalex.org/W2153162275","https://openalex.org/W2079259690","https://openalex.org/W789543267"],"abstract_inverted_index":{"This":[0],"paper":[1],"compares":[2],"six":[3],"different":[4,9],"8T":[5,101],"SRAM":[6,42],"bitcells":[7,28],"targeting":[8,104],"design":[10],"space":[11],"requirements":[12],"-":[13,20],"such":[14],"as":[15],"reliability":[16,72],"and":[17,36,63,69,79,82,107],"low":[18,105,108],"power/energy":[19],"for":[21,73,90],"Internet":[22],"of":[23,33],"Things":[24],"(IoT)":[25],"applications.":[26],"Different":[27],"leverage":[29],"the":[30,97],"varying":[31],"characteristics":[32],"high-threshold":[34],"(high-VT)":[35],"standard-threshold":[37],"(standard-VT)":[38],"devices":[39],"to":[40],"affect":[41],"metrics":[43],"like":[44],"write":[45,62],"margin":[46],"(WM),":[47],"Data":[48],"Retention":[49],"Voltage":[50],"(DRV),":[51],"Hold":[52],"Static":[53,58],"Noise":[54,59],"Margin":[55,60],"(HSNM),":[56],"Read":[57],"(RSNM),":[61],"read":[64],"energy,":[65],"standby":[66],"leakage":[67,106],"power,":[68],"variability.":[70],"The":[71],"each":[74],"bitcell":[75,102],"over":[76],"process":[77],"(intra-":[78],"inter-die":[80],"variation)":[81],"temperature":[83],"variation":[84],"is":[85],"also":[86],"evaluated.":[87],"Measured":[88],"results":[89],"a":[91],"commercial":[92],"130nm":[93],"test":[94],"chip":[95],"compare":[96],"most":[98],"promising":[99],"two":[100],"structures":[103],"energy.":[109]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":9},{"year":2016,"cited_by_count":2}],"updated_date":"2026-03-05T09:29:38.588285","created_date":"2025-10-10T00:00:00"}