{"id":"https://openalex.org/W2014347993","doi":"https://doi.org/10.1109/isqed.2014.6783374","title":"Impact of FinFET technology for power gating in nano-scale design","display_name":"Impact of FinFET technology for power gating in nano-scale design","publication_year":2014,"publication_date":"2014-03-01","ids":{"openalex":"https://openalex.org/W2014347993","doi":"https://doi.org/10.1109/isqed.2014.6783374","mag":"2014347993"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2014.6783374","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2014.6783374","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Fifteenth International Symposium on Quality Electronic Design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102853887","display_name":"Keunwoo Kim","orcid":"https://orcid.org/0000-0003-1083-0385"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Keunwoo Kim","raw_affiliation_strings":["IBM T. J. Watson Research Center, Keunwoo Kim is with Samsung Korea, Yorktown Heights, NY","Samsung Korea, South Korea"],"affiliations":[{"raw_affiliation_string":"IBM T. J. Watson Research Center, Keunwoo Kim is with Samsung Korea, Yorktown Heights, NY","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Korea, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071376756","display_name":"Rouwaida Kanj","orcid":"https://orcid.org/0000-0002-3519-2917"},"institutions":[{"id":"https://openalex.org/I98635879","display_name":"American University of Beirut","ror":"https://ror.org/04pznsd21","country_code":"LB","type":"education","lineage":["https://openalex.org/I98635879"]}],"countries":["LB"],"is_corresponding":false,"raw_author_name":"Rouwaida Kanj","raw_affiliation_strings":["American University of Beirut","American University of Beirut, Beirut Lebanon"],"affiliations":[{"raw_affiliation_string":"American University of Beirut","institution_ids":["https://openalex.org/I98635879"]},{"raw_affiliation_string":"American University of Beirut, Beirut Lebanon","institution_ids":["https://openalex.org/I98635879"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5105554115","display_name":"Rajiv Joshi","orcid":"https://orcid.org/0009-0007-7486-1531"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["KR","US"],"is_corresponding":false,"raw_author_name":"Rajiv V. Joshi","raw_affiliation_strings":["IBM T. J. Watson Research Center, Keunwoo Kim is with Samsung Korea, Yorktown Heights, NY","IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#"],"affiliations":[{"raw_affiliation_string":"IBM T. J. Watson Research Center, Keunwoo Kim is with Samsung Korea, Yorktown Heights, NY","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5102853887"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":1.256,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.82135141,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"543","last_page":"547"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power-gating","display_name":"Power gating","score":0.8906748294830322},{"id":"https://openalex.org/keywords/gating","display_name":"Gating","score":0.6043368577957153},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6009892821311951},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5920096039772034},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5584984421730042},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.4877260625362396},{"id":"https://openalex.org/keywords/ring-oscillator","display_name":"Ring oscillator","score":0.45214658975601196},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4402584433555603},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.42862504720687866},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4217243790626526},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4169135093688965},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"Integrated circuit design","score":0.4139883816242218},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4119330644607544},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3950735628604889},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.37114179134368896},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3679478168487549},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12152835726737976}],"concepts":[{"id":"https://openalex.org/C2780700455","wikidata":"https://www.wikidata.org/wiki/Q7236515","display_name":"Power gating","level":4,"score":0.8906748294830322},{"id":"https://openalex.org/C194544171","wikidata":"https://www.wikidata.org/wiki/Q21105679","display_name":"Gating","level":2,"score":0.6043368577957153},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6009892821311951},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5920096039772034},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5584984421730042},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.4877260625362396},{"id":"https://openalex.org/C104111718","wikidata":"https://www.wikidata.org/wiki/Q2153973","display_name":"Ring oscillator","level":3,"score":0.45214658975601196},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4402584433555603},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.42862504720687866},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4217243790626526},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4169135093688965},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.4139883816242218},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4119330644607544},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3950735628604889},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.37114179134368896},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3679478168487549},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12152835726737976},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C42407357","wikidata":"https://www.wikidata.org/wiki/Q521","display_name":"Physiology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2014.6783374","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2014.6783374","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Fifteenth International Symposium on Quality Electronic Design","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8199999928474426,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1489111899","https://openalex.org/W1553548039","https://openalex.org/W1661368752","https://openalex.org/W1986697603","https://openalex.org/W2075038446","https://openalex.org/W2112475735","https://openalex.org/W2130149296"],"related_works":["https://openalex.org/W2004834197","https://openalex.org/W2404323568","https://openalex.org/W4378175625","https://openalex.org/W2952738319","https://openalex.org/W1970386983","https://openalex.org/W2938543345","https://openalex.org/W4255392205","https://openalex.org/W3005731895","https://openalex.org/W2143954265","https://openalex.org/W2052583367"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3,57,60,71,76,95,124],"first":[4],"detailed":[5],"analysis":[6],"of":[7,31,59,63,70,103,119],"power":[8],"gating":[9],"structures":[10],"in":[11,88,109,123],"sub-nano":[12],"scale":[13],"FinFET":[14,64,89,111],"circuits.":[15,90],"FinFETs":[16],"are":[17,39,53,115],"compared":[18,132],"with":[19,50],"their":[20],"bulk":[21,134],"CMOS":[22],"counterpart":[23],"devices":[24],"to":[25,55,101,133],"gain":[26],"design":[27,113],"perspective":[28],"for":[29,45,75,137],"purposes":[30],"power-gating":[32,65,78,120,125],"applications.":[33],"Circuit":[34],"performance,":[35],"power,":[36],"and":[37,135],"leakage":[38,129,138],"analyzed.":[40],"TCAD":[41],"device/circuit":[42],"mixed-mode":[43],"simulations":[44],"a":[46],"FinFET-based":[47],"ring":[48],"oscillator":[49],"footer":[51],"structure":[52,126],"employed":[54],"study":[56],"implications":[58],"physical":[61],"properties":[62],"devices.":[66],"A":[67],"critical":[68],"evaluation":[69],"virtual":[72],"ground":[73,96],"bounce":[74,97],"proposed":[77],"scheme":[79],"is":[80,98],"presented":[81],"providing":[82],"an":[83],"insight":[84],"into":[85],"low-power":[86],"applications":[87],"For":[91],"low":[92],"voltage":[93],"operation":[94],"found":[99],"comparable":[100],"that":[102],"bulk-Si":[104],"while":[105],"maintaining":[106],"40%":[107],"reduction":[108],"delay.":[110],"specific":[112],"metrics":[114],"analyzed":[116],"as":[117],"function":[118],"device":[121],"size":[122],"indicating":[127],"larger":[128],"current":[130],"sensitivity":[131],"room":[136],"envelope":[139],"optimization.":[140]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}