{"id":"https://openalex.org/W2085988671","doi":"https://doi.org/10.1109/isqed.2012.6187571","title":"Design issues and insights of multi-fin bulk silicon FinFETs","display_name":"Design issues and insights of multi-fin bulk silicon FinFETs","publication_year":2012,"publication_date":"2012-03-01","ids":{"openalex":"https://openalex.org/W2085988671","doi":"https://doi.org/10.1109/isqed.2012.6187571","mag":"2085988671"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2012.6187571","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2012.6187571","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5017504339","display_name":"Hsun Li","orcid":"https://orcid.org/0000-0002-2847-1520"},"institutions":[{"id":"https://openalex.org/I75430998","display_name":"National Ilan University","ror":"https://ror.org/01npf0s58","country_code":"TW","type":"education","lineage":["https://openalex.org/I75430998"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hsun Li","raw_affiliation_strings":["Department of Electronic Engineering, National Ilan University, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, National Ilan University, Taiwan","institution_ids":["https://openalex.org/I75430998"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085545279","display_name":"Meng\u2010Hsueh Chiang","orcid":"https://orcid.org/0000-0003-4789-6302"},"institutions":[{"id":"https://openalex.org/I75430998","display_name":"National Ilan University","ror":"https://ror.org/01npf0s58","country_code":"TW","type":"education","lineage":["https://openalex.org/I75430998"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Meng-Hsueh Chiang","raw_affiliation_strings":["Department of Electronic Engineering, National Ilan University, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, National Ilan University, Taiwan","institution_ids":["https://openalex.org/I75430998"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I75430998"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"723","last_page":"726"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/fin","display_name":"Fin","score":0.7313917875289917},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.6454497575759888},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5300730466842651},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4372982382774353},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.43357154726982117},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4128759503364563},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.40012750029563904},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2705519497394562},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1934407651424408},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19105571508407593},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07529914379119873},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.0742247998714447}],"concepts":[{"id":"https://openalex.org/C91721477","wikidata":"https://www.wikidata.org/wiki/Q778612","display_name":"Fin","level":2,"score":0.7313917875289917},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6454497575759888},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5300730466842651},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4372982382774353},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.43357154726982117},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4128759503364563},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.40012750029563904},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2705519497394562},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1934407651424408},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19105571508407593},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07529914379119873},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0742247998714447}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2012.6187571","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2012.6187571","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321040","display_name":"National Science Council","ror":"https://ror.org/02kv4zf79"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2002566635","https://openalex.org/W2011701663","https://openalex.org/W2091977528","https://openalex.org/W2168189941"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2312552982","https://openalex.org/W2735122849","https://openalex.org/W2292675962","https://openalex.org/W2330747830","https://openalex.org/W2071264383","https://openalex.org/W3127524829","https://openalex.org/W2121524308","https://openalex.org/W1993889649","https://openalex.org/W2304807864"],"abstract_inverted_index":{"Multi-fin":[0],"bulk":[1,68],"silicon":[2],"FinFET-based":[3],"design":[4,44,66,105],"issues":[5],"and":[6,86,97],"implications":[7],"using":[8],"3D":[9],"numerical":[10],"simulation":[11],"are":[12],"presented":[13],"for":[14],"the":[15,42,46,60,81,103],"first":[16],"time.":[17],"In":[18],"order":[19],"to":[20,33,50],"gain":[21],"sufficient":[22],"drive":[23],"current":[24,120],"of":[25,56,59,64],"each":[26],"transistor,":[27],"multi-fin":[28,43],"layout":[29],"is":[30],"inevitable":[31],"due":[32],"limited":[34],"aspect":[35],"ratio":[36],"or":[37],"fin":[38,82],"height.":[39],"However,":[40],"how":[41],"impacts":[45],"circuit":[47],"performance":[48,113],"needs":[49],"be":[51,91,115],"taken":[52],"into":[53],"account.":[54],"Because":[55],"non-planar":[57],"nature":[58],"fin,":[61],"conventional":[62],"concept":[63],"multi-finger":[65],"in":[67],"CMOS":[69],"technology":[70],"does":[71],"not":[72],"apply.":[73],"We":[74],"found":[75],"an":[76],"extra":[77],"leakage":[78,119],"path":[79],"underneath":[80],"spacing":[83],"between":[84],"source":[85],"drain.":[87],"Such":[88],"impact":[89],"can":[90,114],"mitigated":[92],"by":[93],"additional":[94],"substrate":[95],"doping":[96],"proper":[98],"gate-to-substrate":[99],"isolation.":[100],"Based":[101],"on":[102],"proposed":[104],"window":[106],"at":[107],"a":[108],"tight":[109],"pitch":[110],"control,":[111],"good":[112],"achieved":[116],"while":[117],"meeting":[118],"requirement.":[121]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}