{"id":"https://openalex.org/W2005156956","doi":"https://doi.org/10.1109/isqed.2010.5450400","title":"Asymmetric 6T SRAM with two-phase write and split bitline differential sensing for low voltage operation","display_name":"Asymmetric 6T SRAM with two-phase write and split bitline differential sensing for low voltage operation","publication_year":2010,"publication_date":"2010-03-01","ids":{"openalex":"https://openalex.org/W2005156956","doi":"https://doi.org/10.1109/isqed.2010.5450400","mag":"2005156956"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2010.5450400","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2010.5450400","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 11th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050071437","display_name":"Satyanand Nalam","orcid":"https://orcid.org/0000-0002-6767-1752"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Satyanand Nalam","raw_affiliation_strings":["University of Virginia, Charlottesville, VA, USA","University of Virginia  Charlottesville USA"],"affiliations":[{"raw_affiliation_string":"University of Virginia, Charlottesville, VA, USA","institution_ids":["https://openalex.org/I51556381"]},{"raw_affiliation_string":"University of Virginia  Charlottesville USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016704219","display_name":"Vikas Chandra","orcid":"https://orcid.org/0009-0005-4996-8455"},"institutions":[{"id":"https://openalex.org/I4210156213","display_name":"American Rock Mechanics Association","ror":"https://ror.org/05vfrxy92","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210156213"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vikas Chandra","raw_affiliation_strings":["ARM, Inc., San Jose, CA, USA","ARM, San Jose, CA USA"],"affiliations":[{"raw_affiliation_string":"ARM, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I4210156213"]},{"raw_affiliation_string":"ARM, San Jose, CA USA","institution_ids":["https://openalex.org/I4210156213"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065957079","display_name":"Cezary Pietrzyk","orcid":null},"institutions":[{"id":"https://openalex.org/I4210156213","display_name":"American Rock Mechanics Association","ror":"https://ror.org/05vfrxy92","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210156213"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Cezary Pietrzyk","raw_affiliation_strings":["ARM, Inc., San Jose, CA, USA","ARM, San Jose, CA USA"],"affiliations":[{"raw_affiliation_string":"ARM, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I4210156213"]},{"raw_affiliation_string":"ARM, San Jose, CA USA","institution_ids":["https://openalex.org/I4210156213"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110751786","display_name":"Robert Aitken","orcid":null},"institutions":[{"id":"https://openalex.org/I4210156213","display_name":"American Rock Mechanics Association","ror":"https://ror.org/05vfrxy92","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210156213"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Robert C. Aitken","raw_affiliation_strings":["ARM, Inc., San Jose, CA, USA","ARM, San Jose, CA USA"],"affiliations":[{"raw_affiliation_string":"ARM, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I4210156213"]},{"raw_affiliation_string":"ARM, San Jose, CA USA","institution_ids":["https://openalex.org/I4210156213"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080557997","display_name":"Benton H. Calhoun","orcid":"https://orcid.org/0000-0002-3770-5050"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Benton H. Calhoun","raw_affiliation_strings":["University of Virginia, Charlottesville, VA, USA","University of Virginia  Charlottesville USA"],"affiliations":[{"raw_affiliation_string":"University of Virginia, Charlottesville, VA, USA","institution_ids":["https://openalex.org/I51556381"]},{"raw_affiliation_string":"University of Virginia  Charlottesville USA","institution_ids":["https://openalex.org/I51556381"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5050071437"],"corresponding_institution_ids":["https://openalex.org/I51556381"],"apc_list":null,"apc_paid":null,"fwci":1.4432,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.82933446,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"139","last_page":"146"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7778441905975342},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.7558712959289551},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6595498919487},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6349090337753296},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5824270248413086},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.535167932510376},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5117332935333252},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.4268527626991272},{"id":"https://openalex.org/keywords/differential","display_name":"Differential (mechanical device)","score":0.4166450500488281},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.4093483090400696},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3871290385723114},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3623771369457245},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.3284490704536438},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.31822067499160767},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.26457393169403076},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.22390612959861755},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17396703362464905},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.11128297448158264}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7778441905975342},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.7558712959289551},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6595498919487},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6349090337753296},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5824270248413086},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.535167932510376},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5117332935333252},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.4268527626991272},{"id":"https://openalex.org/C93226319","wikidata":"https://www.wikidata.org/wiki/Q193137","display_name":"Differential (mechanical device)","level":2,"score":0.4166450500488281},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.4093483090400696},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3871290385723114},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3623771369457245},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.3284490704536438},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.31822067499160767},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.26457393169403076},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.22390612959861755},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17396703362464905},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.11128297448158264},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2010.5450400","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2010.5450400","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 11th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.7400000095367432,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1999777621","https://openalex.org/W2002612140","https://openalex.org/W2067392247","https://openalex.org/W2109022584","https://openalex.org/W2109104675","https://openalex.org/W2114378634","https://openalex.org/W2123278390","https://openalex.org/W2133245981","https://openalex.org/W2135560405","https://openalex.org/W2155323253","https://openalex.org/W2171922263","https://openalex.org/W2188838890","https://openalex.org/W6676123085"],"related_works":["https://openalex.org/W2118528827","https://openalex.org/W2154145758","https://openalex.org/W2110839220","https://openalex.org/W1582224818","https://openalex.org/W2775062502","https://openalex.org/W2044270051","https://openalex.org/W4285609043","https://openalex.org/W2894151971","https://openalex.org/W2549050530","https://openalex.org/W3082116521"],"abstract_inverted_index":{"This":[0,32],"paper":[1],"describes":[2],"an":[3],"asymmetric":[4],"single-ended":[5,101],"6T":[6],"SRAM":[7,70],"bitcell":[8,25,124],"that":[9,48],"improves":[10,58],"both":[11],"Read":[12],"Static":[13],"Noise":[14,19],"Margin":[15,20],"(RSNM)":[16],"and":[17,62,109],"Write":[18],"(WNM)":[21],"for":[22,121],"the":[23,59,64,69,100,122],"same":[24,123],"area":[26],"as":[27],"a":[28,37,89,94],"conventional":[29,118],"symmetric":[30],"6T.":[31,102],"improvement":[33,53],"is":[34,78],"achieved":[35],"using":[36,83,93],"single":[38],"V":[39],"<sub":[40,72],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[41,73],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DD</sub>":[42],",":[43],"without":[44],"employing":[45],"assist":[46],"techniques":[47],"require":[49],"multiple":[50],"voltages.":[51],"The":[52],"in":[54,80],"noise":[55],"margins":[56],"significantly":[57],"low-voltage":[60],"robustness":[61],"consequently":[63],"minimum":[65],"operating":[66],"voltage":[67],"of":[68,105],"(V":[71],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">MIN</sub>":[74],").":[75],"Single-ended":[76],"write":[77],"accomplished":[79],"two":[81],"phases":[82],"dual":[84],"word-lines.":[85],"Finally,":[86],"we":[87],"propose":[88],"differential":[90,119],"sensing":[91],"scheme":[92],"weak":[95],"reference":[96],"cell":[97],"to":[98,117],"read":[99,114],"A":[103],"combination":[104],"reduced":[106],"bitline":[107],"capacitance":[108],"increased":[110],"drive":[111],"current":[112],"ensure":[113],"delay":[115],"comparable":[116],"sensing,":[120],"area.":[125]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}