{"id":"https://openalex.org/W2069295881","doi":"https://doi.org/10.1109/isqed.2009.4810363","title":"The impact of BEOL lithography effects on the SRAM cell performance and yield","display_name":"The impact of BEOL lithography effects on the SRAM cell performance and yield","publication_year":2009,"publication_date":"2009-03-01","ids":{"openalex":"https://openalex.org/W2069295881","doi":"https://doi.org/10.1109/isqed.2009.4810363","mag":"2069295881"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2009.4810363","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2009.4810363","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 10th International Symposium on Quality Electronic Design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102784960","display_name":"Ying Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I91045830","display_name":"Texas A&M University","ror":"https://ror.org/01f5ytq51","country_code":"US","type":"education","lineage":["https://openalex.org/I91045830"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Ying Zhou","raw_affiliation_strings":["Dept. of Electrical Engineering, Texas A&M University, College Station, 77843, USA","Department of Electrical Engineering, Texas A&M University, College Station, 77843 USA"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, Texas A&M University, College Station, 77843, USA","institution_ids":["https://openalex.org/I91045830"]},{"raw_affiliation_string":"Department of Electrical Engineering, Texas A&M University, College Station, 77843 USA","institution_ids":["https://openalex.org/I91045830"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071376756","display_name":"Rouwaida Kanj","orcid":"https://orcid.org/0000-0002-3519-2917"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rouwaida Kanj","raw_affiliation_strings":["IBM Austin Research Lab, Austin, Texas 78751, USA"],"affiliations":[{"raw_affiliation_string":"IBM Austin Research Lab, Austin, Texas 78751, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113938530","display_name":"Kanak Agarwal","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kanak Agarwal","raw_affiliation_strings":["IBM Research Division, Yorktown Heights, NY, 10598, USA","IBM Research Division , Yorktown Heights, NY, 10598, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research Division, Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Research Division , Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100448026","display_name":"Zhuo Li","orcid":"https://orcid.org/0000-0002-5535-5920"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zhuo Li","raw_affiliation_strings":["IBM Austin Research Lab, Austin, Texas 78751, USA"],"affiliations":[{"raw_affiliation_string":"IBM Austin Research Lab, Austin, Texas 78751, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105554115","display_name":"Rajiv Joshi","orcid":"https://orcid.org/0009-0007-7486-1531"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rajiv Joshi","raw_affiliation_strings":["IBM Research Division, Yorktown Heights, NY, 10598, USA","IBM Research Division , Yorktown Heights, NY, 10598, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research Division, Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Research Division , Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046886936","display_name":"Sani Nassif","orcid":"https://orcid.org/0000-0002-5096-4794"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sani Nassif","raw_affiliation_strings":["IBM Austin Research Lab, Austin, Texas 78751, USA"],"affiliations":[{"raw_affiliation_string":"IBM Austin Research Lab, Austin, Texas 78751, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078773079","display_name":"Weiping Shi","orcid":"https://orcid.org/0000-0001-9773-9255"},"institutions":[{"id":"https://openalex.org/I91045830","display_name":"Texas A&M University","ror":"https://ror.org/01f5ytq51","country_code":"US","type":"education","lineage":["https://openalex.org/I91045830"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Weiping Shi","raw_affiliation_strings":["Dept. of Electrical Engineering, Texas A&M University, College Station, 77843, USA","Department of Electrical Engineering, Texas A&M University, College Station, 77843 USA"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, Texas A&M University, College Station, 77843, USA","institution_ids":["https://openalex.org/I91045830"]},{"raw_affiliation_string":"Department of Electrical Engineering, Texas A&M University, College Station, 77843 USA","institution_ids":["https://openalex.org/I91045830"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5102784960"],"corresponding_institution_ids":["https://openalex.org/I91045830"],"apc_list":null,"apc_paid":null,"fwci":2.1279,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.87582999,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"607","last_page":"612"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7314776182174683},{"id":"https://openalex.org/keywords/design-for-manufacturability","display_name":"Design for manufacturability","score":0.6881572008132935},{"id":"https://openalex.org/keywords/parasitic-extraction","display_name":"Parasitic extraction","score":0.5977883338928223},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.5953062176704407},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5823437571525574},{"id":"https://openalex.org/keywords/lithography","display_name":"Lithography","score":0.542240560054779},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.371913343667984},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3716474175453186},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22029462456703186},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.18737724423408508},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.18180561065673828}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7314776182174683},{"id":"https://openalex.org/C62064638","wikidata":"https://www.wikidata.org/wiki/Q553878","display_name":"Design for manufacturability","level":2,"score":0.6881572008132935},{"id":"https://openalex.org/C159818811","wikidata":"https://www.wikidata.org/wiki/Q7135947","display_name":"Parasitic extraction","level":2,"score":0.5977883338928223},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.5953062176704407},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5823437571525574},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.542240560054779},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.371913343667984},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3716474175453186},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22029462456703186},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.18737724423408508},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.18180561065673828},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2009.4810363","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2009.4810363","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 10th International Symposium on Quality Electronic Design","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1539533361","https://openalex.org/W1979616688","https://openalex.org/W1984963120","https://openalex.org/W1999237447","https://openalex.org/W2110033475","https://openalex.org/W2123085386","https://openalex.org/W2140823559","https://openalex.org/W2142718365","https://openalex.org/W2175366782","https://openalex.org/W6632079197"],"related_works":["https://openalex.org/W2094969048","https://openalex.org/W994558755","https://openalex.org/W1905216755","https://openalex.org/W2010746423","https://openalex.org/W3035935536","https://openalex.org/W2117710422","https://openalex.org/W2372119205","https://openalex.org/W4283270028","https://openalex.org/W1987106725","https://openalex.org/W2157255030"],"abstract_inverted_index":{"With":[0,120],"the":[1,19,27,47,56,69,88,116,123,137,162,170,186,214,225,231,239,245,249],"feature":[2],"size":[3],"shrinking":[4],"down":[5],"to":[6,15,114,174,235],"65":[7],"nm":[8],"and":[9,21,25,41,77,97,153,168,196],"beyond,":[10],"manufacturing":[11],"process":[12],"variation":[13,40,223],"starts":[14],"signif":[16],"cantly":[17],"impact":[18,74,124,138,161,169,250],"device":[20,247],"interconnect":[22,72,107,201],"electrical":[23],"parameters,":[24],"therefore":[26],"performance":[28,96],"of":[29,87,90,125,139,181,209,213,238,242],"circuits.":[30],"Back-end-of-line":[31],"(BEOL)":[32],"design":[33,62],"for":[34,217],"manufacturability":[35],"concerns":[36],"such":[37],"as":[38,244],"lithography":[39],"misalignment":[42,236],"are":[43,131],"more":[44,165,194,252],"pronounced":[45],"in":[46,112,207],"advanced":[48,58],"technology":[49,59],"node.":[50],"Since":[51],"SRAM":[52,64,95,101,175,226],"cell":[53,65,71,106],"always":[54],"\"tests\"":[55],"most":[57],"among":[60],"all":[61],"blocks,":[63],"yield":[66,98,172],"analysis":[67],"considering":[68,150],"internal":[70,105],"BEOL":[73,91,117,126,191,218],"is":[75,110,147,193,237,251],"important":[76],"necessary.":[78],"In":[79],"this":[80],"paper,":[81],"we":[82,135],"perform":[83],"a":[84,197],"critical":[85],"study":[86,115,136,219],"effects":[89],"lithographic":[92,118,144,155],"variations":[93,127,216],"on":[94,128,224],"analysis.":[99],"An":[100],"simulation":[102],"model":[103,192,199],"with":[104,189],"RC":[108],"parasitics":[109,141,160],"presented":[111],"order":[113,241],"impact.":[119],"our":[121,190],"method,":[122],"memory":[129],"designs":[130],"systematically":[132],"evaluated.":[133],"First,":[134],"ideal":[140,159],"assuming":[142],"no":[143],"variations.":[145,156],"This":[146,183],"followed":[148],"by":[149,164],"worstcase,":[151],"best-case":[152],"nominal":[154],"On":[157],"average,":[158],"delay":[163],"than":[166],"20-30%":[167],"stability":[171],"leading":[173],"minimum":[176],"operating":[177],"voltage,":[178],"Vmin,":[179],"increase":[180],"100mV.":[182],"implies":[184],"that":[185],"power":[187],"estimation":[188],"accurate,":[195],"traditional":[198],"without":[200],"parasitic":[202],"may":[203],"be":[204],"33%":[205],"off":[206],"terms":[208],"accuracy.":[210],"Additional":[211],"accounting":[212],"litho":[215],"induces":[220],"about":[221],"4%":[222],"read":[227],"delay.":[228],"Finally,":[229],"when":[230],"resistance":[232],"change":[233],"due":[234],"same":[240],"magnitude":[243],"nonlinear":[246],"resistance,":[248],"severe.":[253]},"counts_by_year":[{"year":2014,"cited_by_count":1}],"updated_date":"2026-03-17T17:19:04.345684","created_date":"2025-10-10T00:00:00"}