{"id":"https://openalex.org/W2128924015","doi":"https://doi.org/10.1109/isqed.2009.4810332","title":"Exploratory study on circuit and architecture design of very high density diode-switch phase change memories","display_name":"Exploratory study on circuit and architecture design of very high density diode-switch phase change memories","publication_year":2009,"publication_date":"2009-03-01","ids":{"openalex":"https://openalex.org/W2128924015","doi":"https://doi.org/10.1109/isqed.2009.4810332","mag":"2128924015"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2009.4810332","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2009.4810332","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 10th International Symposium on Quality of Electronic Design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100404334","display_name":"Shu Li","orcid":"https://orcid.org/0000-0003-1742-2480"},"institutions":[{"id":"https://openalex.org/I165799507","display_name":"Rensselaer Polytechnic Institute","ror":"https://ror.org/01rtyzb94","country_code":"US","type":"education","lineage":["https://openalex.org/I165799507"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Shu Li","raw_affiliation_strings":["Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA","Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy NY 12180, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA","institution_ids":["https://openalex.org/I165799507"]},{"raw_affiliation_string":"Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy NY 12180, USA","institution_ids":["https://openalex.org/I165799507"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100378796","display_name":"Tong Zhang","orcid":"https://orcid.org/0000-0002-6434-0712"},"institutions":[{"id":"https://openalex.org/I165799507","display_name":"Rensselaer Polytechnic Institute","ror":"https://ror.org/01rtyzb94","country_code":"US","type":"education","lineage":["https://openalex.org/I165799507"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Tong Zhang","raw_affiliation_strings":["Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA","Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy NY 12180, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA","institution_ids":["https://openalex.org/I165799507"]},{"raw_affiliation_string":"Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy NY 12180, USA","institution_ids":["https://openalex.org/I165799507"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5100404334"],"corresponding_institution_ids":["https://openalex.org/I165799507"],"apc_list":null,"apc_paid":null,"fwci":0.1561,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.52003187,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"424","last_page":"429"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6825088262557983},{"id":"https://openalex.org/keywords/redundancy","display_name":"Redundancy (engineering)","score":0.621962308883667},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5069220662117004},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.5016577243804932},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.47858619689941406},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4713934063911438},{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.4699808657169342},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4586733281612396},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2170000970363617},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19189077615737915},{"id":"https://openalex.org/keywords/phase-change","display_name":"Phase change","score":0.10109841823577881}],"concepts":[{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6825088262557983},{"id":"https://openalex.org/C152124472","wikidata":"https://www.wikidata.org/wiki/Q1204361","display_name":"Redundancy (engineering)","level":2,"score":0.621962308883667},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5069220662117004},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.5016577243804932},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.47858619689941406},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4713934063911438},{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.4699808657169342},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4586733281612396},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2170000970363617},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19189077615737915},{"id":"https://openalex.org/C133256868","wikidata":"https://www.wikidata.org/wiki/Q7180940","display_name":"Phase change","level":2,"score":0.10109841823577881},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.0},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2009.4810332","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2009.4810332","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 10th International Symposium on Quality of Electronic Design","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1559166296","https://openalex.org/W1982196078","https://openalex.org/W1989175497","https://openalex.org/W2039475871","https://openalex.org/W2052677323","https://openalex.org/W2149709590","https://openalex.org/W2160814308","https://openalex.org/W2166095336","https://openalex.org/W2545497739"],"related_works":["https://openalex.org/W2001162238","https://openalex.org/W1495042958","https://openalex.org/W2494338568","https://openalex.org/W3206756243","https://openalex.org/W1993569419","https://openalex.org/W2122678784","https://openalex.org/W1516220628","https://openalex.org/W1998848660","https://openalex.org/W2916375603","https://openalex.org/W2098463429"],"abstract_inverted_index":{"This":[0,111],"paper":[1,112,153],"concerns":[2],"the":[3,38,83,118,141,179],"circuit":[4,63],"and":[5,33,64,88,103,124,131,136,165],"architecture":[6,65],"design":[7,172,181],"of":[8,49,72,140,143],"diode-switch":[9,39,53],"phase":[10,24,40,54],"change":[11,25,41,55],"memories":[12],"at":[13,58,62],"highly":[14,46],"scaled":[15],"technology":[16,27],"nodes.":[17],"Due":[18],"to":[19,81,116,177],"its":[20],"great":[21],"scalability":[22],"potential,":[23],"memory":[26,42,56,73,171],"has":[28],"recently":[29],"attracted":[30],"tremendous":[31],"interest,":[32],"from":[34],"storage":[35,85],"density":[36,52,86],"perspective":[37],"cell":[43],"structure":[44],"is":[45,148],"desirable.":[47],"Design":[48],"very":[50],"high":[51],"faces":[57],"least":[59],"two":[60,120],"challenges":[61],"levels,":[66],"including":[67,128],"(i)":[68],"silicon":[69],"area":[70],"overhead":[71],"peripheral":[74,126],"circuits":[75,127],"must":[76],"be":[77,101,109],"minimized":[78],"in":[79],"order":[80],"push":[82],"effective":[84],"envelope,":[87],"(ii)":[89],"conventional":[90],"defect":[91,105,157],"tolerance":[92,106,158],"strategy":[93],"using":[94],"redundant":[95],"row/column":[96,129],"repair":[97,164],"may":[98],"no":[99],"longer":[100],"applicable":[102],"new":[104],"approach":[107,133,159],"should":[108],"used.":[110],"presents":[113,154],"possible":[114],"solutions":[115],"address":[117],"above":[119],"issues.":[121],"Very":[122],"simple":[123,156],"cost-effective":[125],"decoders":[130],"sensing":[132],"are":[134,174],"developed,":[135],"a":[137,155],"theoretical":[138],"analysis":[139],"impact":[142],"non-negligible":[144],"reverse-bias":[145],"diode":[146],"leakage":[147],"also":[149],"presented.":[150],"Moreover,":[151],"this":[152],"that":[160],"combines":[161],"coarse-grained":[162],"redundancy":[163],"error":[166],"correcting":[167],"codes":[168],"(ECC).":[169],"Hypothetical":[170],"examples":[173],"further":[175],"used":[176],"demonstrate":[178],"presented":[180],"techniques.":[182]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}