{"id":"https://openalex.org/W2144136778","doi":"https://doi.org/10.1109/isqed.2009.4810263","title":"NBTI-aware statistical circuit delay assessment","display_name":"NBTI-aware statistical circuit delay assessment","publication_year":2009,"publication_date":"2009-03-01","ids":{"openalex":"https://openalex.org/W2144136778","doi":"https://doi.org/10.1109/isqed.2009.4810263","mag":"2144136778"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2009.4810263","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2009.4810263","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 10th International Symposium on Quality of Electronic Design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103561940","display_name":"Balaji Vaidyanathan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]},{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["TW","US"],"is_corresponding":true,"raw_author_name":"Balaji Vaidyanathan","raw_affiliation_strings":["Department of Computer Science and Engineering, Pennsylvania State University, PA, USA","Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Computer Science and Engineering, Pennsylvania State University, PA, USA","institution_ids":["https://openalex.org/I130769515"]},{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077991240","display_name":"A. S. Oates","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Anthony S. Oates","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100385336","display_name":"Yuan Xie","orcid":"https://orcid.org/0000-0003-2093-1788"},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuan Xie","raw_affiliation_strings":["Department of Computer Science and Engineering, Pennsylvania State University, PA, USA"],"affiliations":[{"raw_affiliation_string":"Department of Computer Science and Engineering, Pennsylvania State University, PA, USA","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100445061","display_name":"Yu Wang","orcid":"https://orcid.org/0000-0001-6108-5157"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yu Wang","raw_affiliation_strings":["Department of Electronics Engineering, Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5103561940"],"corresponding_institution_ids":["https://openalex.org/I130769515","https://openalex.org/I4210120917"],"apc_list":null,"apc_paid":null,"fwci":2.9908,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.91545333,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"13","last_page":"18"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.8515671491622925},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.6568323969841003},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5457481741905212},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.4884156584739685},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4641275405883789},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4524196982383728},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.24924948811531067},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23170572519302368},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23093515634536743},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21213224530220032},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09951692819595337}],"concepts":[{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.8515671491622925},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.6568323969841003},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5457481741905212},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.4884156584739685},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4641275405883789},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4524196982383728},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.24924948811531067},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23170572519302368},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23093515634536743},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21213224530220032},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09951692819595337}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/isqed.2009.4810263","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2009.4810263","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 10th International Symposium on Quality of Electronic Design","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-133813","is_oa":false,"landing_page_url":"http://www.scopus.com/record/display.url?eid=2-s2.0-67649671613&origin=inward","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/13","score":0.5600000023841858,"display_name":"Climate action"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1693570377","https://openalex.org/W1999781385","https://openalex.org/W2096035326","https://openalex.org/W2112414127","https://openalex.org/W2122520074","https://openalex.org/W2122757690","https://openalex.org/W2129638039","https://openalex.org/W2134067926","https://openalex.org/W2136376683","https://openalex.org/W2141565132","https://openalex.org/W2142381056","https://openalex.org/W2156064231","https://openalex.org/W2161648718","https://openalex.org/W4233474994","https://openalex.org/W6682867480"],"related_works":["https://openalex.org/W1999919743","https://openalex.org/W2081382200","https://openalex.org/W2100282217","https://openalex.org/W2157278395","https://openalex.org/W2164047446","https://openalex.org/W2096191509","https://openalex.org/W2126351224","https://openalex.org/W3033168326","https://openalex.org/W2609002938","https://openalex.org/W2117835845"],"abstract_inverted_index":{"This":[0],"work":[1],"establishes":[2],"an":[3],"analytical":[4],"model":[5],"framework":[6],"to":[7],"account":[8,30],"for":[9,31],"the":[10,38,47],"NBTI":[11,26,43],"aging":[12],"effect":[13],"on":[14,46],"statistical":[15,41],"circuit":[16,25],"delay":[17,49],"distribution.":[18],"In":[19],"this":[20,32],"paper,":[21],"we":[22],"explain":[23],"how":[24],"mitigation":[27],"techniques":[28],"can":[29],"extra":[33],"variability":[34,45],"and":[35],"further":[36],"present":[37],"impact":[39],"of":[40],"PMOS":[42],"DC-lifetime":[44],"product":[48],"spread.":[50]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}