{"id":"https://openalex.org/W2135748666","doi":"https://doi.org/10.1109/isqed.2008.4479834","title":"Node Criticality Computation for Circuit Timing Analysis and Optimization under NBTI Effect","display_name":"Node Criticality Computation for Circuit Timing Analysis and Optimization under NBTI Effect","publication_year":2008,"publication_date":"2008-03-01","ids":{"openalex":"https://openalex.org/W2135748666","doi":"https://doi.org/10.1109/isqed.2008.4479834","mag":"2135748666"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2008.4479834","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2008.4479834","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"9th International Symposium on Quality Electronic Design (isqed 2008)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100668416","display_name":"Wenping Wang","orcid":"https://orcid.org/0000-0002-2284-3952"},"institutions":[{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Wenping Wang","raw_affiliation_strings":["Department of Electrical Engineering, Arizona State University, Tempe, AZ, USA","Arizona State University, Tempe,#TAB#"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Arizona State University, Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]},{"raw_affiliation_string":"Arizona State University, Tempe,#TAB#","institution_ids":["https://openalex.org/I55732556"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075362627","display_name":"Shengqi Yang","orcid":"https://orcid.org/0000-0002-0782-9116"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shengqi Yang","raw_affiliation_strings":["Intel Corporation, Chandler, AZ, USA","Intel#TAB#"],"affiliations":[{"raw_affiliation_string":"Intel Corporation, Chandler, AZ, USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel#TAB#","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100740019","display_name":"Yu Cao","orcid":"https://orcid.org/0000-0001-6968-1180"},"institutions":[{"id":"https://openalex.org/I4210154524","display_name":"European Council for an Energy Efficient Economy","ror":"https://ror.org/04xytpa07","country_code":"SE","type":"nonprofit","lineage":["https://openalex.org/I4210154524"]},{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["SE","US"],"is_corresponding":false,"raw_author_name":"Yu Cao","raw_affiliation_strings":["Department of Electrical Engineering, Arizona State University, Tempe, AZ, USA","IAFSE-ECEE: Electrical Engineering"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Arizona State University, Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]},{"raw_affiliation_string":"IAFSE-ECEE: Electrical Engineering","institution_ids":["https://openalex.org/I4210154524"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5100668416"],"corresponding_institution_ids":["https://openalex.org/I55732556"],"apc_list":null,"apc_paid":null,"fwci":5.0857,"has_fulltext":false,"cited_by_count":25,"citation_normalized_percentile":{"value":0.95435195,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"763","last_page":"768"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.8746997117996216},{"id":"https://openalex.org/keywords/criticality","display_name":"Criticality","score":0.7812012434005737},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.7480373382568359},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.6381526589393616},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5618962049484253},{"id":"https://openalex.org/keywords/computation","display_name":"Computation","score":0.5435693860054016},{"id":"https://openalex.org/keywords/static-timing-analysis","display_name":"Static timing analysis","score":0.5350488424301147},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5111473202705383},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.46605759859085083},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.42918193340301514},{"id":"https://openalex.org/keywords/limiting","display_name":"Limiting","score":0.41813135147094727},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3737014830112457},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.2618717551231384},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17201286554336548},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.14774513244628906},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.14264848828315735},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.13524886965751648},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.13442584872245789},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11262312531471252},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.09929159283638},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.06782403588294983}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.8746997117996216},{"id":"https://openalex.org/C125611927","wikidata":"https://www.wikidata.org/wiki/Q17008131","display_name":"Criticality","level":2,"score":0.7812012434005737},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.7480373382568359},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6381526589393616},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5618962049484253},{"id":"https://openalex.org/C45374587","wikidata":"https://www.wikidata.org/wiki/Q12525525","display_name":"Computation","level":2,"score":0.5435693860054016},{"id":"https://openalex.org/C93682380","wikidata":"https://www.wikidata.org/wiki/Q2025226","display_name":"Static timing analysis","level":2,"score":0.5350488424301147},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5111473202705383},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.46605759859085083},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.42918193340301514},{"id":"https://openalex.org/C188198153","wikidata":"https://www.wikidata.org/wiki/Q1613840","display_name":"Limiting","level":2,"score":0.41813135147094727},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3737014830112457},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.2618717551231384},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17201286554336548},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.14774513244628906},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.14264848828315735},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.13524886965751648},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.13442584872245789},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11262312531471252},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.09929159283638},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06782403588294983},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2008.4479834","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2008.4479834","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"9th International Symposium on Quality Electronic Design (isqed 2008)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W1517312377","https://openalex.org/W1964078389","https://openalex.org/W1991431227","https://openalex.org/W1991891926","https://openalex.org/W2041424982","https://openalex.org/W2047518460","https://openalex.org/W2069345435","https://openalex.org/W2099679924","https://openalex.org/W2102729267","https://openalex.org/W2103792078","https://openalex.org/W2120566121","https://openalex.org/W2122507955","https://openalex.org/W2122757690","https://openalex.org/W2134111163","https://openalex.org/W2135694842","https://openalex.org/W2142908374","https://openalex.org/W2144651789","https://openalex.org/W2147416680","https://openalex.org/W2149263288","https://openalex.org/W2149447807","https://openalex.org/W2149606342","https://openalex.org/W2150375993","https://openalex.org/W2543188300","https://openalex.org/W2545401637","https://openalex.org/W3143610959","https://openalex.org/W3147685595","https://openalex.org/W4249811926","https://openalex.org/W4253814782","https://openalex.org/W6682315463"],"related_works":["https://openalex.org/W1970920853","https://openalex.org/W2099679924","https://openalex.org/W2738622559","https://openalex.org/W1977755957","https://openalex.org/W2115165828","https://openalex.org/W1982822282","https://openalex.org/W2076372184","https://openalex.org/W2142908374","https://openalex.org/W1602382472","https://openalex.org/W4233474994"],"abstract_inverted_index":{"For":[0],"sub-65":[1],"nm":[2],"technology":[3],"nodes,":[4],"Negative":[5],"Bias":[6],"Temperature":[7],"Instability":[8],"(NBTI)":[9],"has":[10],"become":[11],"a":[12,131],"primary":[13],"limiting":[14],"factor":[15],"of":[16,35],"circuit":[17,53,132,167],"lifetime.":[18],"During":[19],"the":[20,91,101,113,140,160],"past":[21],"few":[22],"years,":[23],"researchers":[24],"have":[25,117],"spent":[26],"considerable":[27],"and":[28,33,73,106,109],"continuous":[29],"efforts":[30],"on":[31,52],"modeling":[32],"characterization":[34],"NBTI-caused":[36],"delay":[37,54,87,168],"degradation":[38,149,169],"at":[39],"different":[40],"design":[41],"levels.":[42],"Searching":[43],"for":[44,90],"solutions":[45],"which":[46,116,143],"can":[47,170],"effectively":[48,152],"reduce":[49],"NBTI":[50,69,86,102,134,147],"impact":[51],"is":[55],"still":[56],"under":[57,100,133],"way.":[58],"In":[59],"this":[60,79,165],"work,":[61],"we":[62,94],"use":[63],"node":[64,96,128],"criticality":[65,97,129],"computation":[66,98],"to":[67,85,112,126,138,175],"drive":[68],"aware":[70,103],"timing":[71,104,148],"analysis":[72,105],"optimization.":[74],"Circuits":[75],"after":[76],"being":[77],"applied":[78],"optimization":[80,107],"flow":[81],"show":[82,156],"strong":[83],"resistance":[84],"degradation.":[88],"Particularly,":[89],"first":[92],"time,":[93],"propose":[95],"algorithm":[99],"framework":[108],"give":[110],"answers":[111],"following":[114],"questions":[115],"not":[118],"been":[119],"answered":[120],"yet.":[121],"They":[122],"are:":[123],"(1)":[124],"how":[125,137],"define":[127],"in":[130],"effect;":[135],"(2)":[136],"find":[139],"critical":[141,161],"nodes":[142,162],"once":[144],"are":[145],"protected":[146],"will":[150],"be":[151,171],"reduced.":[153],"Experimental":[154],"results":[155],"that":[157],"by":[158,164,173],"protecting":[159],"found":[163],"framework,":[166],"reduced":[172],"up":[174],"50%.":[176]},"counts_by_year":[{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":1}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}