{"id":"https://openalex.org/W2103197677","doi":"https://doi.org/10.1109/isqed.2008.4479738","title":"Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes","display_name":"Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes","publication_year":2008,"publication_date":"2008-03-01","ids":{"openalex":"https://openalex.org/W2103197677","doi":"https://doi.org/10.1109/isqed.2008.4479738","mag":"2103197677"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2008.4479738","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2008.4479738","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"9th International Symposium on Quality Electronic Design (isqed 2008)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100415293","display_name":"Feng Liu","orcid":"https://orcid.org/0000-0002-6370-4115"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Feng Liu","raw_affiliation_strings":["School of Computer and Information Engineering,Shenzhen Graduate School, Peking University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"School of Computer and Information Engineering,Shenzhen Graduate School, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059179466","display_name":"Jin He","orcid":"https://orcid.org/0000-0001-5081-3569"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jin He","raw_affiliation_strings":["Peking University, Beijing, Beijing, CN"],"affiliations":[{"raw_affiliation_string":"Peking University, Beijing, Beijing, CN","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075985408","display_name":"Yue Fu","orcid":"https://orcid.org/0000-0002-7144-6929"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Fu","raw_affiliation_strings":["Peking University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049920455","display_name":"Jinhua Hu","orcid":"https://orcid.org/0000-0002-6991-4594"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jinhua Hu","raw_affiliation_strings":["The Hub of Multiple-Project-Wafer, Peking University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"The Hub of Multiple-Project-Wafer, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060043446","display_name":"Wei Bian","orcid":"https://orcid.org/0000-0002-7898-9571"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Bian","raw_affiliation_strings":["School of Computer and Information Engineering,Shenzhen Graduate School, Peking University, Shenzhen, China"],"affiliations":[{"raw_affiliation_string":"School of Computer and Information Engineering,Shenzhen Graduate School, Peking University, Shenzhen, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101527139","display_name":"Yan Song","orcid":"https://orcid.org/0000-0002-8573-5529"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yan Song","raw_affiliation_strings":["School of Computer and Information Engineering,Shenzhen Graduate School, Peking University, Shenzhen, China"],"affiliations":[{"raw_affiliation_string":"School of Computer and Information Engineering,Shenzhen Graduate School, Peking University, Shenzhen, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5116225786","display_name":"Xing Zhang","orcid":"https://orcid.org/0009-0001-7388-819X"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xing Zhang","raw_affiliation_strings":["School of Computer and Information Engineering, Peking University Shenzhen Graduate School, Shenzhen, P. R. China","The Hub of Multiple-Project-Wafer, Peking University, Beijing, P. R. China"],"affiliations":[{"raw_affiliation_string":"School of Computer and Information Engineering, Peking University Shenzhen Graduate School, Shenzhen, P. R. China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"The Hub of Multiple-Project-Wafer, Peking University, Beijing, P. R. China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5056796025","display_name":"Mansun Chan","orcid":"https://orcid.org/0000-0002-5104-7410"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Mansun Chan","raw_affiliation_strings":["Department of Electronical and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China"],"affiliations":[{"raw_affiliation_string":"Department of Electronical and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China","institution_ids":["https://openalex.org/I200769079"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5100415293"],"corresponding_institution_ids":["https://openalex.org/I20231570"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.12610239,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"271","last_page":"276"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.8160449862480164},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7519408464431763},{"id":"https://openalex.org/keywords/terminal","display_name":"Terminal (telecommunication)","score":0.6626695990562439},{"id":"https://openalex.org/keywords/double-gate","display_name":"Double gate","score":0.6516467332839966},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.46081751585006714},{"id":"https://openalex.org/keywords/core","display_name":"Core (optical fiber)","score":0.4441072642803192},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4174465835094452},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4041282534599304},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4039982557296753},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35036733746528625},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.299310564994812},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20461508631706238},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.18661418557167053},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.18354389071464539},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.1466001272201538},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1334751844406128}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.8160449862480164},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7519408464431763},{"id":"https://openalex.org/C2779664074","wikidata":"https://www.wikidata.org/wiki/Q3518405","display_name":"Terminal (telecommunication)","level":2,"score":0.6626695990562439},{"id":"https://openalex.org/C3019885731","wikidata":"https://www.wikidata.org/wiki/Q48087455","display_name":"Double gate","level":5,"score":0.6516467332839966},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.46081751585006714},{"id":"https://openalex.org/C2164484","wikidata":"https://www.wikidata.org/wiki/Q5170150","display_name":"Core (optical fiber)","level":2,"score":0.4441072642803192},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4174465835094452},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4041282534599304},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4039982557296753},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35036733746528625},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.299310564994812},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20461508631706238},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18661418557167053},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.18354389071464539},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.1466001272201538},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1334751844406128}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/isqed.2008.4479738","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2008.4479738","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"9th International Symposium on Quality Electronic Design (isqed 2008)","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-34580","is_oa":false,"landing_page_url":"http://repository.hkust.edu.hk/ir/Record/1783.1-34580","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1981574081","https://openalex.org/W1996756340","https://openalex.org/W2025477460","https://openalex.org/W2058283199","https://openalex.org/W2089413527","https://openalex.org/W2093598722","https://openalex.org/W2095490235","https://openalex.org/W2101701949","https://openalex.org/W2110169254","https://openalex.org/W2111305862","https://openalex.org/W2115548860","https://openalex.org/W2119150014","https://openalex.org/W2129015853","https://openalex.org/W2165081214","https://openalex.org/W2170542648","https://openalex.org/W2179035354","https://openalex.org/W2545890115","https://openalex.org/W4250498385"],"related_works":["https://openalex.org/W2326188151","https://openalex.org/W2031432268","https://openalex.org/W2386361943","https://openalex.org/W2149895879","https://openalex.org/W4250300609","https://openalex.org/W2010357007","https://openalex.org/W2765340795","https://openalex.org/W2545707786","https://openalex.org/W2133198051","https://openalex.org/W2473578222"],"abstract_inverted_index":{"A":[0],"generic":[1,42],"carrier-based":[2,89],"core":[3,90],"model":[4,45,59,91,95],"for":[5,12,92],"undoped":[6],"four-terminal":[7],"double-gate":[8,85],"(DG)":[9],"MOSFET":[10],"valid":[11],"symmetric,":[13],"asymmetric,":[14],"SOI,":[15],"and":[16],"independent":[17],"gate":[18],"operation":[19],"modes":[20],"is":[21,46,60],"presented":[22],"in":[23,52],"this":[24],"paper.":[25],"Based":[26],"on":[27],"the":[28,32,55,82],"exact":[29],"solution":[30],"of":[31,36,54],"1-D":[33],"Poisson\u2019s":[34],"equation":[35],"a":[37,41,88],"general":[38],"DG-MOSFET":[39,94],"configure,":[40],"drain":[43],"current":[44],"derived":[47],"from":[48],"Pao-Sah\u2019s":[49],"double":[50],"integral":[51],"terms":[53],"carrier":[56],"concentration.":[57],"The":[58,77],"verified":[61],"by":[62],"extensive":[63],"comparisons":[64],"with":[65],"2-D":[66],"numerical":[67],"simulations":[68],"under":[69],"different":[70],"bias":[71],"conditions":[72],"to":[73],"all":[74],"four":[75],"terminals.":[76],"concise":[78],"mathematic":[79],"formulation":[80],"allows":[81],"unification":[83],"various":[84],"models":[86],"into":[87],"compact":[93],"development.":[96]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}