{"id":"https://openalex.org/W2124748568","doi":"https://doi.org/10.1109/isqed.2008.4479707","title":"Cache Design for Low Power and High Yield","display_name":"Cache Design for Low Power and High Yield","publication_year":2008,"publication_date":"2008-03-01","ids":{"openalex":"https://openalex.org/W2124748568","doi":"https://doi.org/10.1109/isqed.2008.4479707","mag":"2124748568"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2008.4479707","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2008.4479707","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"9th International Symposium on Quality Electronic Design (isqed 2008)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5013814572","display_name":"Baker Mohammad","orcid":"https://orcid.org/0000-0002-6063-473X"},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Baker Mohammad","raw_affiliation_strings":["QUALCOMM, Inc.orporated, USA","University of Texas, Austin, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"QUALCOMM, Inc.orporated, USA","institution_ids":["https://openalex.org/I4210087596"]},{"raw_affiliation_string":"University of Texas, Austin, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088701856","display_name":"Martin Saint-Laurent","orcid":null},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Martin Saint-Laurent","raw_affiliation_strings":["QUALCOMM, Inc.orporated, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"QUALCOMM, Inc.orporated, USA","institution_ids":["https://openalex.org/I4210087596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112187817","display_name":"Paul Bassett","orcid":null},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Paul Bassett","raw_affiliation_strings":["QUALCOMM, Inc.orporated, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"QUALCOMM, Inc.orporated, USA","institution_ids":["https://openalex.org/I4210087596"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5068070739","display_name":"Jacob A. Abraham","orcid":"https://orcid.org/0000-0002-5336-5631"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jacob Abraham","raw_affiliation_strings":["University of Texas, Austin, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Texas, Austin, USA","institution_ids":["https://openalex.org/I86519309"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":6.1052,"has_fulltext":false,"cited_by_count":35,"citation_normalized_percentile":{"value":0.96468803,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"103","last_page":"107"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8689455986022949},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.6832752227783203},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5610414743423462},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.5276947021484375},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5035247206687927},{"id":"https://openalex.org/keywords/cache","display_name":"Cache","score":0.4444105327129364},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4390050172805786},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4369155168533325},{"id":"https://openalex.org/keywords/parametric-statistics","display_name":"Parametric statistics","score":0.4167692959308624},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.41630807518959045},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.4141850471496582},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.32721298933029175},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.30656698346138},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.2950795292854309},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2882119417190552},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.10314154624938965}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8689455986022949},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.6832752227783203},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5610414743423462},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.5276947021484375},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5035247206687927},{"id":"https://openalex.org/C115537543","wikidata":"https://www.wikidata.org/wiki/Q165596","display_name":"Cache","level":2,"score":0.4444105327129364},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4390050172805786},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4369155168533325},{"id":"https://openalex.org/C117251300","wikidata":"https://www.wikidata.org/wiki/Q1849855","display_name":"Parametric statistics","level":2,"score":0.4167692959308624},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.41630807518959045},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.4141850471496582},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.32721298933029175},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.30656698346138},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.2950795292854309},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2882119417190552},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.10314154624938965},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2008.4479707","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2008.4479707","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"9th International Symposium on Quality Electronic Design (isqed 2008)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5400000214576721,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1480743676","https://openalex.org/W1503103436","https://openalex.org/W1518236483","https://openalex.org/W1527137186","https://openalex.org/W1970601044","https://openalex.org/W2006292752","https://openalex.org/W2099231065","https://openalex.org/W2106507957","https://openalex.org/W2113115586","https://openalex.org/W2115301364","https://openalex.org/W2117648153","https://openalex.org/W2123892915","https://openalex.org/W2132357267","https://openalex.org/W2132621842","https://openalex.org/W2153325201","https://openalex.org/W2397682474","https://openalex.org/W3148792909"],"related_works":["https://openalex.org/W3150866391","https://openalex.org/W2119312496","https://openalex.org/W4247460323","https://openalex.org/W2112214579","https://openalex.org/W2537086382","https://openalex.org/W2310523918","https://openalex.org/W2107909712","https://openalex.org/W4200470254","https://openalex.org/W2118528827","https://openalex.org/W2775062502"],"abstract_inverted_index":{"A":[0],"novel":[1,85],"circuit":[2,86],"approach":[3],"to":[4,40,52,128,141,146,151],"increase":[5],"SRAM":[6,60,111,144],"static":[7,112],"noise":[8,55,113],"margin":[9,56,114,118],"(SNM)":[10,115],"and":[11,97,116,124,132,148,155],"enable":[12],"lower":[13],"operating":[14],"voltage":[15,44,77,91,102,122],"is":[16,51,81],"described.":[17],"Increasing":[18],"process":[19],"variability":[20],"[1]":[21],"[2]":[22],"for":[23,46],"new":[24],"technologies":[25],"coupled":[26],"with":[27,125],"increased":[28],"reliability":[29],"effects":[30],"like":[31],"negative":[32],"bias":[33],"temperature":[34],"instability":[35],"(NBTI)":[36],"[3]":[37],"all":[38],"contribute":[39],"raising":[41],"the":[42,54,58,64,70,75,90,94,99,110,143],"minimum":[43,126],"required":[45],"stable":[47],"SRAM.":[48],"Our":[49],"strategy":[50],"improve":[53],"of":[57,66,69],"6T":[59],"cell":[61,71],"by":[62],"reducing":[63],"effect":[65],"parametric":[67],"variation":[68],"[4],":[72],"especially":[73],"in":[74],"low":[76],"operation":[78],"mode.":[79],"This":[80],"done":[82],"using":[83,119],"a":[84,120],"that":[87],"selectively":[88],"reduces":[89,98],"swing":[92],"on":[93],"world":[95],"line":[96],"memory":[100],"supply":[101,123],"during":[103],"write":[104,117],"operation.":[105],"The":[106,134],"proposed":[107],"design":[108],"increases":[109],"single":[121],"impact":[127],"chip":[129],"area,":[130],"complexity,":[131],"timing.":[133],"technique":[135],"supports":[136],"both":[137],"on-chip":[138],"corner":[139],"identification":[140],"adapt":[142],"behavior":[145],"silicon,":[147],"software":[149],"controllability":[150],"tradeoff":[152],"yield,":[153],"power,":[154],"performance.":[156]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":6},{"year":2012,"cited_by_count":4}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}