{"id":"https://openalex.org/W2028188861","doi":"https://doi.org/10.1109/isqed.2008.4479685","title":"Tutorial 2: Low Voltage Circuit Design Techniques for Sub-32nm Technologies","display_name":"Tutorial 2: Low Voltage Circuit Design Techniques for Sub-32nm Technologies","publication_year":2008,"publication_date":"2008-03-01","ids":{"openalex":"https://openalex.org/W2028188861","doi":"https://doi.org/10.1109/isqed.2008.4479685","mag":"2028188861"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2008.4479685","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2008.4479685","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"9th International Symposium on Quality Electronic Design (isqed 2008)","raw_type":"proceedings-article"},"type":"conference-abstract","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055630196","display_name":"Chris Kim","orcid":"https://orcid.org/0000-0002-0792-6338"},"institutions":[{"id":"https://openalex.org/I130238516","display_name":"University of Minnesota","ror":"https://ror.org/017zqws13","country_code":"US","type":"education","lineage":["https://openalex.org/I130238516"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Chris Kim","raw_affiliation_strings":["University of Minnesota, USA","University of Minnesota, Minneapolis,#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Minnesota, USA","institution_ids":["https://openalex.org/I130238516"]},{"raw_affiliation_string":"University of Minnesota, Minneapolis,#TAB#","institution_ids":["https://openalex.org/I130238516"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5055630196"],"corresponding_institution_ids":["https://openalex.org/I130238516"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"4","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9940999746322632,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9796000123023987,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6698393821716309},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5779343843460083},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5436628460884094},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.5422788858413696},{"id":"https://openalex.org/keywords/circuit-design","display_name":"Circuit design","score":0.5058714747428894},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"Integrated circuit design","score":0.49175646901130676},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4848659932613373},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.4519597291946411},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4441644847393036},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4261396825313568},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3873938322067261},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36541420221328735},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2939067482948303},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.22707557678222656},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.2208336889743805},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.17226794362068176},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.11070162057876587}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6698393821716309},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5779343843460083},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5436628460884094},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.5422788858413696},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.5058714747428894},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.49175646901130676},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4848659932613373},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.4519597291946411},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4441644847393036},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4261396825313568},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3873938322067261},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36541420221328735},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2939067482948303},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.22707557678222656},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.2208336889743805},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.17226794362068176},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.11070162057876587},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2008.4479685","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2008.4479685","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"9th International Symposium on Quality Electronic Design (isqed 2008)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8899999856948853,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2070694218","https://openalex.org/W2532822217","https://openalex.org/W2081795747","https://openalex.org/W2093304652","https://openalex.org/W2098316714","https://openalex.org/W4389672975","https://openalex.org/W1987513258","https://openalex.org/W1963851171","https://openalex.org/W2148163917","https://openalex.org/W2134664711"],"abstract_inverted_index":{"Summary":[0],"form":[1],"only":[2],"given.":[3],"In":[4],"order":[5],"to":[6,18,74,117],"continue":[7],"CMOS":[8],"scaling":[9],"towards":[10],"the":[11,58,122],"physical":[12],"limit,":[13],"care":[14],"must":[15],"be":[16,107],"taken":[17],"account":[19],"for":[20,93],"each":[21],"obstacle":[22],"that":[23],"is":[24],"currently":[25],"impeding":[26],"our":[27],"progress.":[28],"Increased":[29],"power":[30,39,77,96],"consumption":[31],"and":[32,60,80,88,120],"faster":[33],"current":[34],"transients":[35],"have":[36,53],"deteriorated":[37],"on-chip":[38,95],"supply":[40,78,97],"integrity.":[41],"Long":[42],"term":[43],"reliability":[44,104],"issues":[45,82],"such":[46],"as":[47],"negative":[48],"bias":[49],"temperature":[50],"instability":[51],"(NBTI)":[52],"become":[54],"serious":[55],"problems":[56],"degrading":[57],"performance":[59,64],"yield":[61],"of":[62,102],"high":[63],"systems.":[65],"This":[66],"talk":[67],"will":[68,106],"focus":[69],"on":[70,114],"circuit":[71,123],"design":[72,89],"techniques":[73,90,116],"deal":[75],"with":[76],"noise":[79],"aging":[81,124],"in":[83],"sub-32nm":[84],"technologies.":[85],"First,":[86],"modeling":[87],"are":[91],"presented":[92],"reliable":[94],"delivery.":[98],"Next,":[99],"an":[100],"overview":[101],"several":[103],"mechanisms":[105],"given":[108],"followed":[109],"by":[110],"some":[111],"recent":[112],"developments":[113],"monitoring":[115],"accurately":[118],"measure":[119],"model":[121],"impact.":[125]},"counts_by_year":[],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}