{"id":"https://openalex.org/W2150645028","doi":"https://doi.org/10.1109/isqed.2004.1283712","title":"Low-voltage-triggered PNP devices for ESD protection design in mixed-voltage I/O interface with over-VDD and under-VSS signal levels","display_name":"Low-voltage-triggered PNP devices for ESD protection design in mixed-voltage I/O interface with over-VDD and under-VSS signal levels","publication_year":2004,"publication_date":"2004-05-06","ids":{"openalex":"https://openalex.org/W2150645028","doi":"https://doi.org/10.1109/isqed.2004.1283712","mag":"2150645028"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2004.1283712","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2004.1283712","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043540734","display_name":"Ming\u2010Dou Ker","orcid":"https://orcid.org/0000-0003-3622-181X"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Ming-Dou Ker","raw_affiliation_strings":["Nanoelectronics and Gigascale Systems Laboratory Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Nanoelectronics and Gigascale Systems Laboratory Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108816832","display_name":"Wei\u2010Jen Chang","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wei-Jen Chang","raw_affiliation_strings":["Nanoelectronics and Gigascale Systems Laboratory Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Nanoelectronics and Gigascale Systems Laboratory Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110271339","display_name":"Wen-Yu Lo","orcid":null},"institutions":[{"id":"https://openalex.org/I4210158869","display_name":"Silicon Motion (Taiwan)","ror":"https://ror.org/05878p058","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210158869"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wen-Yu Lo","raw_affiliation_strings":["Mixed-Signal Product Division, Silicon Integrated System Corporation, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Mixed-Signal Product Division, Silicon Integrated System Corporation, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210158869"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5043540734"],"corresponding_institution_ids":["https://openalex.org/I148366613"],"apc_list":null,"apc_paid":null,"fwci":0.6583,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.73370523,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"433","last_page":"438"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.7066715955734253},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.6958996057510376},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.5882439017295837},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5676195025444031},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5563101172447205},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5457127094268799},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5455923676490784},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.524761438369751},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.42753511667251587},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.42661550641059875},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2872575521469116},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21305161714553833}],"concepts":[{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.7066715955734253},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.6958996057510376},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.5882439017295837},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5676195025444031},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5563101172447205},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5457127094268799},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5455923676490784},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.524761438369751},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42753511667251587},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.42661550641059875},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2872575521469116},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21305161714553833},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C28413391","wikidata":"https://www.wikidata.org/wiki/Q785542","display_name":"Capillary number","level":3,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C196806460","wikidata":"https://www.wikidata.org/wiki/Q188603","display_name":"Capillary action","level":2,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2004.1283712","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2004.1283712","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6899999976158142,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W30798415","https://openalex.org/W2097201911"],"related_works":["https://openalex.org/W2124694210","https://openalex.org/W2153609444","https://openalex.org/W2544244340","https://openalex.org/W3160715487","https://openalex.org/W1889262262","https://openalex.org/W2157426934","https://openalex.org/W2533798643","https://openalex.org/W1991734107","https://openalex.org/W2213763090","https://openalex.org/W1975168371"],"abstract_inverted_index":{"An":[0],"ESD":[1,74],"protection":[2],"design":[3],"for":[4,46],"mixed-voltage":[5,43],"I/O":[6,44],"interfaces":[7],"with":[8,48],"low-voltage-triggered":[9],"PNP":[10,36,87],"(LVTPNP)":[11],"devices":[12],"is":[13,38,80],"proposed":[14,78],"in":[15,63],"this":[16],"paper.":[17],"The":[18,60],"LVTPNP,":[19],"by":[20],"inserting":[21],"N+":[22],"or":[23],"P+":[24],"diffusion":[25],"across":[26],"the":[27,30,35,42,73,77,85],"junction":[28],"between":[29],"N-well":[31],"and":[32,55],"P-substrate":[33],"of":[34,76,84],"devices,":[37],"designed":[39],"to":[40],"protect":[41],"pads":[45],"signals":[47],"voltage":[49],"levels":[50],"higher":[51,81],"than":[52,57,82],"VDD":[53],"(over-VDD)":[54],"lower":[56],"VSS":[58],"(under-VSS).":[59],"experimental":[61],"results":[62],"a":[64],"0.35":[65],"/spl":[66],"mu/m":[67],"CMOS":[68],"process":[69],"have":[70],"proven":[71],"that":[72,83],"level":[75],"LVTPNP":[79],"traditional":[86],"device.":[88]},"counts_by_year":[{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}