{"id":"https://openalex.org/W2113408632","doi":"https://doi.org/10.1109/isqed.2002.996717","title":"A hybrid PPC method based on the empirical etch model for the 0.14\u03bcm DRAM generation and beyond","display_name":"A hybrid PPC method based on the empirical etch model for the 0.14\u03bcm DRAM generation and beyond","publication_year":2003,"publication_date":"2003-06-25","ids":{"openalex":"https://openalex.org/W2113408632","doi":"https://doi.org/10.1109/isqed.2002.996717","mag":"2113408632"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2002.996717","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2002.996717","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings International Symposium on Quality Electronic Design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011537016","display_name":"Chul\u2010Hong Park","orcid":"https://orcid.org/0000-0002-0476-8450"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Chul-Hong Park","raw_affiliation_strings":["CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111658753","display_name":"Soo-Han Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Soo-Han Choi","raw_affiliation_strings":["CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033179754","display_name":"Sang-Uhk Rhie","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang-Uhk Rhie","raw_affiliation_strings":["CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100454647","display_name":"Donghyun Kim","orcid":"https://orcid.org/0000-0001-7130-0279"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong-Hyun Kim","raw_affiliation_strings":["CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111904530","display_name":"Jun-Seong Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jun-Seong Park","raw_affiliation_strings":["CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111904531","display_name":"Tae-Hwang Jang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Tae-Hwang Jang","raw_affiliation_strings":["CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001682244","display_name":"Ji-Soong Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ji-Soong Park","raw_affiliation_strings":["CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029348765","display_name":"Yoo-Hyon Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yoo-Hyon Kim","raw_affiliation_strings":["CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109153957","display_name":"Moon\u2010Hyun Yoo","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Moon-Hyun Yoo","raw_affiliation_strings":["CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024769872","display_name":"Jeong-Taek Kong","orcid":"https://orcid.org/0000-0003-2500-668X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jeong-Taek Kong","raw_affiliation_strings":["CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CAE, Semiconductor R&D Center, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"CAE, Samsung Electron. Co. Ltd., Gyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5011537016"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.3477,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.64110142,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"143","last_page":"147"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7318145036697388},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6648191809654236},{"id":"https://openalex.org/keywords/reduction","display_name":"Reduction (mathematics)","score":0.5678734183311462},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.5424656271934509},{"id":"https://openalex.org/keywords/lithography","display_name":"Lithography","score":0.5130676031112671},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.4814390540122986},{"id":"https://openalex.org/keywords/optical-proximity-correction","display_name":"Optical proximity correction","score":0.46595248579978943},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.45502692461013794},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.4037943482398987},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.15198948979377747},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.13893982768058777},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.13654237985610962},{"id":"https://openalex.org/keywords/machine-learning","display_name":"Machine learning","score":0.11601626873016357}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7318145036697388},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6648191809654236},{"id":"https://openalex.org/C111335779","wikidata":"https://www.wikidata.org/wiki/Q3454686","display_name":"Reduction (mathematics)","level":2,"score":0.5678734183311462},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.5424656271934509},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.5130676031112671},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.4814390540122986},{"id":"https://openalex.org/C78371743","wikidata":"https://www.wikidata.org/wiki/Q1672829","display_name":"Optical proximity correction","level":3,"score":0.46595248579978943},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.45502692461013794},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.4037943482398987},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.15198948979377747},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.13893982768058777},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.13654237985610962},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.11601626873016357},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2002.996717","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2002.996717","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings International Symposium on Quality Electronic Design","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1572040609","https://openalex.org/W1937346484","https://openalex.org/W1944115203","https://openalex.org/W1966512888","https://openalex.org/W1978257030","https://openalex.org/W1995125212","https://openalex.org/W2020190788","https://openalex.org/W2034763686","https://openalex.org/W2080354232","https://openalex.org/W2086936570","https://openalex.org/W2096507178","https://openalex.org/W2112285517","https://openalex.org/W2128134968","https://openalex.org/W2142731943","https://openalex.org/W2168735511","https://openalex.org/W2489611400","https://openalex.org/W4229507792","https://openalex.org/W6722878190"],"related_works":["https://openalex.org/W2802459864","https://openalex.org/W4306406015","https://openalex.org/W2125031708","https://openalex.org/W3143665566","https://openalex.org/W1987855151","https://openalex.org/W2088068989","https://openalex.org/W1976544989","https://openalex.org/W2064613305","https://openalex.org/W2035734563","https://openalex.org/W2050847819"],"abstract_inverted_index":{"The":[0,55,108],"hybrid":[1,34,62],"PPC":[2,35,63,75,151],"(process":[3],"proximity":[4,106],"correction)":[5],"has":[6,152],"been":[7,153],"one":[8],"of":[9,21,46,53,61,71,86,95,138],"the":[10,14,19,40,44,51,59,65,69,84,87,92,103,113,122,132,139,143,149],"inevitable":[11],"methods":[12],"for":[13,33],"sub-wavelength":[15],"lithography":[16],"to":[17,38,49,101,120],"satisfy":[18],"requirements":[20],"CD":[22,145],"control":[23],"and":[24,43,48,73,83],"yield":[25],"improvement.":[26],"In":[27],"this":[28,129],"paper,":[29],"an":[30,96],"effective":[31,93],"methodology":[32],"is":[36,99,117],"presented":[37],"reduce":[39],"data":[41],"volume":[42],"complexity":[45],"patterns":[47,67],"enhance":[50],"accuracy":[52],"correction.":[54],"selective":[56],"engine":[57],"in":[58,125,142],"flow":[60],"classifies":[64],"gate":[66],"into":[68],"areas":[70],"model-based":[72],"rule-based":[74,150],"considering":[76],"a":[77,80],"device":[78],"performance,":[79],"model":[81,98],"accuracy,":[82],"extension":[85],"contact":[88],"overlap":[89],"margin.":[90],"Furthermore,":[91],"method":[94,110],"empirical":[97],"exploited":[100],"compensate":[102],"nonlinear":[104],"etch":[105],"effect.":[107],"statistical":[109],"based":[111],"on":[112],"real":[114,126],"pattern":[115],"geometry":[116],"also":[118],"constructed":[119],"reflect":[121],"process":[123],"issues":[124],"manufacturing.":[127],"From":[128],"work":[130],"with":[131,148],"1":[133],"nm":[134],"correction":[135],"grid,":[136],"22%":[137],"additional":[140],"reduction":[141],"intra-die":[144],"variation":[146],"compared":[147],"achieved.":[154]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}