{"id":"https://openalex.org/W4319431375","doi":"https://doi.org/10.1109/isocc56007.2022.10031538","title":"An Aging Detection and Tolerance Framework for 8T SRAM Dot Product CIM Engine","display_name":"An Aging Detection and Tolerance Framework for 8T SRAM Dot Product CIM Engine","publication_year":2022,"publication_date":"2022-10-19","ids":{"openalex":"https://openalex.org/W4319431375","doi":"https://doi.org/10.1109/isocc56007.2022.10031538"},"language":"en","primary_location":{"id":"doi:10.1109/isocc56007.2022.10031538","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isocc56007.2022.10031538","pdf_url":null,"source":{"id":"https://openalex.org/S4363608048","display_name":"2022 19th International SoC Design Conference (ISOCC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 19th International SoC Design Conference (ISOCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011277985","display_name":"Yuguang Chen","orcid":"https://orcid.org/0000-0003-4520-5395"},"institutions":[{"id":"https://openalex.org/I22265921","display_name":"National Central University","ror":"https://ror.org/00944ve71","country_code":"TW","type":"education","lineage":["https://openalex.org/I22265921"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yu-Guang Chen","raw_affiliation_strings":["National Central University,Dept. of EE,Taoyuan,Taiwan","Dept. of EE, National Central University, Taoyuan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Central University,Dept. of EE,Taoyuan,Taiwan","institution_ids":["https://openalex.org/I22265921"]},{"raw_affiliation_string":"Dept. of EE, National Central University, Taoyuan, Taiwan","institution_ids":["https://openalex.org/I22265921"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035725118","display_name":"Chi\u2010Hsu Wang","orcid":"https://orcid.org/0000-0001-5763-6833"},"institutions":[{"id":"https://openalex.org/I22265921","display_name":"National Central University","ror":"https://ror.org/00944ve71","country_code":"TW","type":"education","lineage":["https://openalex.org/I22265921"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chi-Hsu Wang","raw_affiliation_strings":["National Central University,Dept. of EE,Taoyuan,Taiwan","Dept. of EE, National Central University, Taoyuan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Central University,Dept. of EE,Taoyuan,Taiwan","institution_ids":["https://openalex.org/I22265921"]},{"raw_affiliation_string":"Dept. of EE, National Central University, Taoyuan, Taiwan","institution_ids":["https://openalex.org/I22265921"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101864424","display_name":"Ing-Chao Lin","orcid":"https://orcid.org/0000-0003-1994-7512"},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ing-Chao Lin","raw_affiliation_strings":["National Cheng Kung University,Dept. of CS,Tainan,Taiwan","Dept. of CS, National Cheng Kung University, Tainan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Cheng Kung University,Dept. of CS,Tainan,Taiwan","institution_ids":["https://openalex.org/I91807558"]},{"raw_affiliation_string":"Dept. of CS, National Cheng Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3189,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.5096791,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"161","last_page":"162"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7810986638069153},{"id":"https://openalex.org/keywords/bottleneck","display_name":"Bottleneck","score":0.7041064500808716},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.636858344078064},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6053617000579834},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.47962865233421326},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4236640930175781},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3887515068054199},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.32285386323928833},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.22067469358444214},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2195509970188141},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.19714602828025818},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.15109336376190186}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7810986638069153},{"id":"https://openalex.org/C2780513914","wikidata":"https://www.wikidata.org/wiki/Q18210350","display_name":"Bottleneck","level":2,"score":0.7041064500808716},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.636858344078064},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6053617000579834},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.47962865233421326},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4236640930175781},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3887515068054199},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32285386323928833},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.22067469358444214},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2195509970188141},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.19714602828025818},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.15109336376190186},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isocc56007.2022.10031538","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isocc56007.2022.10031538","pdf_url":null,"source":{"id":"https://openalex.org/S4363608048","display_name":"2022 19th International SoC Design Conference (ISOCC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 19th International SoC Design Conference (ISOCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2031948068","https://openalex.org/W2750392872","https://openalex.org/W2775637085","https://openalex.org/W2966878541","https://openalex.org/W3104353813"],"related_works":["https://openalex.org/W2033512842","https://openalex.org/W4322734194","https://openalex.org/W1607054433","https://openalex.org/W3005535424","https://openalex.org/W4233600955","https://openalex.org/W2913665393","https://openalex.org/W2369695847","https://openalex.org/W2994319598","https://openalex.org/W2110842462","https://openalex.org/W4233757488"],"abstract_inverted_index":{"Computing":[0],"In-Memory":[1],"(CIM),":[2],"which":[3,54,72],"directly":[4],"performs":[5],"in-situ":[6],"operations":[7],"at":[8],"memory,":[9],"is":[10],"one":[11],"of":[12,58,74,122],"the":[13,56,97,120],"promising":[14],"solutions":[15],"to":[16,29,95,101],"overcome":[17],"von":[18],"Neumann":[19],"bottleneck.":[20],"Previous":[21],"researchers":[22],"have":[23],"proposed":[24],"an":[25,67,75,80],"8T-SRAM-based":[26],"CIM":[27,40,59,69,93,123],"structure":[28,41,94],"perform":[30],"dot":[31],"product":[32],"(DP)":[33],"computations":[34],"by":[35],"analog":[36],"charging/discharging":[37],"operations.":[38,124],"However,":[39],"may":[42],"suffer":[43],"from":[44],"variations":[45,102],"and":[46,52,79,103,117],"aging":[47,76,81,104],"effects":[48],"such":[49],"as":[50],"BTI":[51],"HCI,":[53],"threat":[55],"reliability":[57,121],"operation":[60,70],"results.":[61],"In":[62],"this":[63],"paper,":[64],"we":[65,85],"propose":[66],"agingaware":[68],"framework":[71],"consists":[73],"detection":[77],"method":[78,111],"tolerance":[82],"technique.":[83],"Specifically,":[84],"apply":[86],"Dynamic":[87],"Voltage":[88],"Scaling":[89],"(DVS)":[90],"on":[91],"affected":[92],"compensate":[96],"current":[98,116],"drop":[99],"due":[100],"effects.":[105],"Experimental":[106],"results":[107],"show":[108],"that":[109],"our":[110],"can":[112],"successfully":[113],"calibrate":[114],"dropped":[115],"thus":[118],"maintain":[119]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}