{"id":"https://openalex.org/W3216759810","doi":"https://doi.org/10.1109/isocc53507.2021.9613944","title":"Artificial synaptic behavior and its improvement of RRAM device with stacked solution-processed MXene layers","display_name":"Artificial synaptic behavior and its improvement of RRAM device with stacked solution-processed MXene layers","publication_year":2021,"publication_date":"2021-10-06","ids":{"openalex":"https://openalex.org/W3216759810","doi":"https://doi.org/10.1109/isocc53507.2021.9613944","mag":"3216759810"},"language":"en","primary_location":{"id":"doi:10.1109/isocc53507.2021.9613944","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isocc53507.2021.9613944","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 18th International SoC Design Conference (ISOCC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086027820","display_name":"Zongjie Shen","orcid":"https://orcid.org/0000-0002-7196-809X"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zongjie Shen","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi&#x2019","an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi&#x2019","institution_ids":[]},{"raw_affiliation_string":"an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052978189","display_name":"Chun Zhao","orcid":"https://orcid.org/0000-0002-4783-960X"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chun Zhao","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China","an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi&#x2019"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi&#x2019","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004188977","display_name":"Yina Liu","orcid":"https://orcid.org/0000-0002-3485-7542"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yina Liu","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi&#x2019","an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi&#x2019","institution_ids":[]},{"raw_affiliation_string":"an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100460341","display_name":"Li Yang","orcid":"https://orcid.org/0000-0002-1040-4223"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Li Yang","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China","an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi&#x2019"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi&#x2019","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024457025","display_name":"Cezhou Zhao","orcid":"https://orcid.org/0000-0002-4933-9692"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Cezhou Zhao","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China","an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi&#x2019"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi&#x2019","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I69356397"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.9100455045700073},{"id":"https://openalex.org/keywords/long-term-potentiation","display_name":"Long-term potentiation","score":0.7760390043258667},{"id":"https://openalex.org/keywords/mnist-database","display_name":"MNIST database","score":0.7413253784179688},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.7405428290367126},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6985503435134888},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.557680606842041},{"id":"https://openalex.org/keywords/conductance","display_name":"Conductance","score":0.5265648365020752},{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.4693986475467682},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.45825445652008057},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.44305509328842163},{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.42234548926353455},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3102981150150299},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.28395918011665344},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.22127443552017212},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.20151764154434204},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.14924558997154236},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.1290513575077057},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09496694803237915},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.0781773030757904}],"concepts":[{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.9100455045700073},{"id":"https://openalex.org/C25274449","wikidata":"https://www.wikidata.org/wiki/Q1805481","display_name":"Long-term potentiation","level":3,"score":0.7760390043258667},{"id":"https://openalex.org/C190502265","wikidata":"https://www.wikidata.org/wiki/Q17069496","display_name":"MNIST database","level":3,"score":0.7413253784179688},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.7405428290367126},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6985503435134888},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.557680606842041},{"id":"https://openalex.org/C121932024","wikidata":"https://www.wikidata.org/wiki/Q5159376","display_name":"Conductance","level":2,"score":0.5265648365020752},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.4693986475467682},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.45825445652008057},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.44305509328842163},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.42234548926353455},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3102981150150299},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.28395918011665344},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22127443552017212},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.20151764154434204},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.14924558997154236},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.1290513575077057},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09496694803237915},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0781773030757904},{"id":"https://openalex.org/C170493617","wikidata":"https://www.wikidata.org/wiki/Q208467","display_name":"Receptor","level":2,"score":0.0},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isocc53507.2021.9613944","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isocc53507.2021.9613944","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 18th International SoC Design Conference (ISOCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320337495","display_name":"Technology Development","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2990533493","https://openalex.org/W3115703985","https://openalex.org/W3135044646","https://openalex.org/W3158249458"],"related_works":["https://openalex.org/W3137378424","https://openalex.org/W2809732489","https://openalex.org/W1872623660","https://openalex.org/W3207218810","https://openalex.org/W4292697011","https://openalex.org/W4287780255","https://openalex.org/W3212508523","https://openalex.org/W3023361272","https://openalex.org/W1995352804","https://openalex.org/W4386475142"],"abstract_inverted_index":{"In":[0,78],"this":[1,56,72],"work,":[2],"an":[3],"RRAM":[4],"device":[5,26,73],"with":[6,31,89,97],"the":[7,20,32,40,51,68,75,82,85,95],"structure":[8],"of":[9,48,55,71,105],"Ag/MXene/MXene/Pt":[10],"was":[11,113,116],"fabricated,":[12],"and":[13,39,63,107],"stacked":[14],"solution-processed":[15],"MXene":[16],"layers":[17],"acted":[18],"as":[19],"resistive":[21],"switching":[22,41],"(RS)":[23],"layer.":[24],"The":[25,45],"exhibited":[27],"bipolar":[28],"RS":[29],"performance":[30,59],"operation":[33],"voltage":[34],"lower":[35],"than":[36],"2.5":[37],"V":[38],"ratio":[42],"around":[43,117],"10<sup>3</sup>.":[44],"multi-level":[46],"states":[47],"conductance":[49],"indicated":[50],"bionic":[52],"synaptic":[53],"characteristics":[54],"device.":[57],"A":[58],"like":[60],"long-term":[61],"potentiation":[62],"depression":[64],"(LTP/LTD)":[65],"response":[66],"suggested":[67],"great":[69],"potential":[70],"in":[74],"neuromorphic":[76],"system.":[77],"addition,":[79],"based":[80],"on":[81,103],"MNIST":[83],"dataset,":[84],"pattern":[86],"recognition":[87,99,111],"system":[88],"key":[90],"parameters":[91],"from":[92],"LTP/LTD":[93],"showed":[94],"result":[96],"85%":[98],"accuracy.":[100],"After":[101],"modulation":[102],"non-linearity":[104],"LTP":[106],"LTD":[108],"curves,":[109],"higher":[110],"accuracy":[112],"obtained,":[114],"which":[115],"93%.":[118]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1}],"updated_date":"2026-07-25T09:21:30.201066","created_date":"2025-10-10T00:00:00"}