{"id":"https://openalex.org/W3215194920","doi":"https://doi.org/10.1109/isocc53507.2021.9613934","title":"A Multi-Bit In-Memory-Computing SRAM Macro Using Column-Wise Charge Redistribution for DNN Inference in Edge Computing Devices","display_name":"A Multi-Bit In-Memory-Computing SRAM Macro Using Column-Wise Charge Redistribution for DNN Inference in Edge Computing Devices","publication_year":2021,"publication_date":"2021-10-06","ids":{"openalex":"https://openalex.org/W3215194920","doi":"https://doi.org/10.1109/isocc53507.2021.9613934","mag":"3215194920"},"language":"en","primary_location":{"id":"doi:10.1109/isocc53507.2021.9613934","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isocc53507.2021.9613934","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 18th International SoC Design Conference (ISOCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040733432","display_name":"Changseon Chae","orcid":null},"institutions":[{"id":"https://openalex.org/I196345858","display_name":"Chungnam National University","ror":"https://ror.org/0227as991","country_code":"KR","type":"education","lineage":["https://openalex.org/I196345858"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Changseon Chae","raw_affiliation_strings":["Department of Electronics Engineering, Chungnam National University, Daejeon, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Chungnam National University, Daejeon, Republic of Korea","institution_ids":["https://openalex.org/I196345858"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100631172","display_name":"Subin Kim","orcid":"https://orcid.org/0000-0002-5226-4046"},"institutions":[{"id":"https://openalex.org/I196345858","display_name":"Chungnam National University","ror":"https://ror.org/0227as991","country_code":"KR","type":"education","lineage":["https://openalex.org/I196345858"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Subin Kim","raw_affiliation_strings":["Department of Electronics Engineering, Chungnam National University, Daejeon, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Chungnam National University, Daejeon, Republic of Korea","institution_ids":["https://openalex.org/I196345858"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030907519","display_name":"Jonghang Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I196345858","display_name":"Chungnam National University","ror":"https://ror.org/0227as991","country_code":"KR","type":"education","lineage":["https://openalex.org/I196345858"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jonghang Choi","raw_affiliation_strings":["Department of Electronics Engineering, Chungnam National University, Daejeon, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Chungnam National University, Daejeon, Republic of Korea","institution_ids":["https://openalex.org/I196345858"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033523410","display_name":"Jun-Eun Park","orcid":"https://orcid.org/0000-0001-6345-7903"},"institutions":[{"id":"https://openalex.org/I196345858","display_name":"Chungnam National University","ror":"https://ror.org/0227as991","country_code":"KR","type":"education","lineage":["https://openalex.org/I196345858"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jun-Eun Park","raw_affiliation_strings":["Department of Electronics Engineering, Chungnam National University, Daejeon, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Chungnam National University, Daejeon, Republic of Korea","institution_ids":["https://openalex.org/I196345858"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5040733432"],"corresponding_institution_ids":["https://openalex.org/I196345858"],"apc_list":null,"apc_paid":null,"fwci":0.4011,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.61432739,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"421","last_page":"422"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9326583743095398},{"id":"https://openalex.org/keywords/macro","display_name":"Macro","score":0.8024728298187256},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6218492984771729},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5183221101760864},{"id":"https://openalex.org/keywords/energy-consumption","display_name":"Energy consumption","score":0.45940011739730835},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.41961801052093506},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3737126588821411},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3704264461994171},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18656989932060242},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.15764158964157104}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9326583743095398},{"id":"https://openalex.org/C166955791","wikidata":"https://www.wikidata.org/wiki/Q629579","display_name":"Macro","level":2,"score":0.8024728298187256},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6218492984771729},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5183221101760864},{"id":"https://openalex.org/C2780165032","wikidata":"https://www.wikidata.org/wiki/Q16869822","display_name":"Energy consumption","level":2,"score":0.45940011739730835},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.41961801052093506},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3737126588821411},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3704264461994171},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18656989932060242},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.15764158964157104},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isocc53507.2021.9613934","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isocc53507.2021.9613934","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 18th International SoC Design Conference (ISOCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320671","display_name":"National Research Foundation","ror":"https://ror.org/05s0g1g46"},{"id":"https://openalex.org/F4320321408","display_name":"Ministry of Education","ror":"https://ror.org/01p262204"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2591601611","https://openalex.org/W2899641901","https://openalex.org/W3026786299","https://openalex.org/W3097655915","https://openalex.org/W3159077147"],"related_works":["https://openalex.org/W1909296377","https://openalex.org/W2089002058","https://openalex.org/W2626140143","https://openalex.org/W3185029353","https://openalex.org/W3116379964","https://openalex.org/W2766443086","https://openalex.org/W2793465010","https://openalex.org/W1985899440","https://openalex.org/W2915176329","https://openalex.org/W2967161359"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3],"charge-redistribution":[4],"inmemory-computing":[5],"(IMC)":[6],"macro":[7,32,62],"that":[8],"realizes":[9],"multi-bit":[10],"multiply-and-accumulation":[11],"(MAC)":[12],"operation":[13,24],"based":[14,25],"on":[15,26],"5T":[16,44],"static":[17],"random-access":[18],"memory":[19],"(SRAM).":[20],"The":[21,56],"charge-domain":[22],"MAC":[23],"capacitor":[27],"array":[28],"allows":[29],"the":[30,54],"IMC-SRAM":[31,58],"to":[33],"achieve":[34],"high":[35],"linearity":[36],"and":[37],"improved":[38],"energy":[39],"efficiency.":[40],"Also,":[41],"an":[42],"optimized":[43],"SRAM":[45],"structure":[46],"saves":[47],"area":[48],"consumption,":[49],"increasing":[50],"bit":[51],"density":[52],"of":[53],"macro.":[55],"proposed":[57],"64":[59,61],"\u00d7":[60],"was":[63],"designed":[64],"using":[65],"28nm":[66],"CMOS":[67],"process.":[68]},"counts_by_year":[{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}