{"id":"https://openalex.org/W3011780691","doi":"https://doi.org/10.1109/isocc47750.2019.9027657","title":"Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures","display_name":"Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures","publication_year":2019,"publication_date":"2019-10-06","ids":{"openalex":"https://openalex.org/W3011780691","doi":"https://doi.org/10.1109/isocc47750.2019.9027657","mag":"3011780691"},"language":"en","primary_location":{"id":"doi:10.1109/isocc47750.2019.9027657","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isocc47750.2019.9027657","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 International SoC Design Conference (ISOCC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086027820","display_name":"Zongjie Shen","orcid":"https://orcid.org/0000-0002-7196-809X"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zongjie Shen","raw_affiliation_strings":["Xi&#x0027;an Jiaotong-Liverpool University,Suzhou,China","Xi'an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi&#x0027;an Jiaotong-Liverpool University,Suzhou,China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Xi'an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024457025","display_name":"Cezhou Zhao","orcid":"https://orcid.org/0000-0002-4933-9692"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Cezhou Zhao","raw_affiliation_strings":["Xi&#x0027;an Jiaotong-Liverpool University,Suzhou,China","Xi'an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi&#x0027;an Jiaotong-Liverpool University,Suzhou,China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Xi'an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100421094","display_name":"Yang Li","orcid":"https://orcid.org/0000-0002-4894-679X"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Li Yang","raw_affiliation_strings":["Xi&#x0027;an Jiaotong-Liverpool University,Suzhou,China","Xi'an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi&#x0027;an Jiaotong-Liverpool University,Suzhou,China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Xi'an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5052978189","display_name":"Chun Zhao","orcid":"https://orcid.org/0000-0002-4783-960X"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chun Zhao","raw_affiliation_strings":["Xi&#x0027;an Jiaotong-Liverpool University,Suzhou,China","Xi'an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi&#x0027;an Jiaotong-Liverpool University,Suzhou,China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Xi'an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I69356397"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"182","last_page":"183"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9937999844551086,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/tin","display_name":"Tin","score":0.8544814586639404},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.8408637046813965},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.8035725951194763},{"id":"https://openalex.org/keywords/work-function","display_name":"Work function","score":0.7787137031555176},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.7490841150283813},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6995403170585632},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5137746930122375},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.45930537581443787},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.40352004766464233},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.4028806984424591},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3198696970939636},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.20092442631721497},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.1457456648349762},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.07411256432533264}],"concepts":[{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.8544814586639404},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.8408637046813965},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.8035725951194763},{"id":"https://openalex.org/C115235246","wikidata":"https://www.wikidata.org/wiki/Q783800","display_name":"Work function","level":3,"score":0.7787137031555176},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.7490841150283813},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6995403170585632},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5137746930122375},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.45930537581443787},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.40352004766464233},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.4028806984424591},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3198696970939636},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.20092442631721497},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1457456648349762},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.07411256432533264},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isocc47750.2019.9027657","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isocc47750.2019.9027657","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 International SoC Design Conference (ISOCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8700000047683716,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2181570267","https://openalex.org/W2620406532","https://openalex.org/W2862157488","https://openalex.org/W2895958933","https://openalex.org/W2916990131","https://openalex.org/W2950676935"],"related_works":["https://openalex.org/W1148372108","https://openalex.org/W2492470561","https://openalex.org/W2545245183","https://openalex.org/W2054635671","https://openalex.org/W2040310861","https://openalex.org/W2273391071","https://openalex.org/W2332218522","https://openalex.org/W2017425642","https://openalex.org/W1969148392","https://openalex.org/W2199653281"],"abstract_inverted_index":{"Solution-processed":[0],"AlO":[1],"<sub":[2],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[3,120,128],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">x</sub>":[4],"thin":[5],"film":[6],"deposited":[7],"under":[8],"different":[9],"annealing":[10],"temperatures":[11],"are":[12],"used":[13],"to":[14,28,68],"develop":[15],"metal/AlOx/Pt":[16],"RRAM":[17,41],"devices,":[18],"with":[19,43,105],"Ni":[20],"and":[21,61,88,95,108,131],"TiN":[22],"as":[23],"the":[24,30,59,82],"top":[25],"electrode":[26,34,63],"(TE)":[27],"investigate":[29],"influence":[31],"of":[32,55,79],"metal":[33],"on":[35],"device":[36],"performances.":[37],"In":[38],"this":[39],"work,":[40],"devices":[42,83,100],"various":[44],"performances":[45],"exhibit":[46],"typical":[47],"bipolar":[48],"resistive":[49],"switching":[50],"(RS)":[51],"characteristics.":[52],"The":[53,98],"difference":[54,78],"work":[56,80],"function":[57],"between":[58],"TE":[60],"bottom":[62],"(BE)":[64],"metals":[65],"is":[66],"considered":[67],"play":[69],"a":[70],"primary":[71],"role":[72],"in":[73],"operation":[74,110],"process.":[75],"With":[76],"smaller":[77],"function,":[81],"indicate":[84],"less":[85],"power":[86],"consumption":[87],"more":[89,102],"stable":[90,103],"on/off":[91,116],"ratio":[92,117],"for":[93],"SET":[94,107],"RESET":[96,109],"operations.":[97],"Ni/AlOx/Pt":[99],"demonstrate":[101],"performance":[104],"lower":[106],"voltages":[111],"(<;":[112],"1.3":[113],"V),":[114],"larger":[115],"(>10":[118,126],"<sup":[119,127],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sup>":[121],"),":[122],"longer":[123],"retention":[124],"time":[125],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">4</sup>":[129],"s)":[130],"better":[132],"endurance(>100":[133],"cycle).":[134]},"counts_by_year":[],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}