{"id":"https://openalex.org/W2077762373","doi":"https://doi.org/10.1109/isocc.2012.6407074","title":"NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells","display_name":"NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells","publication_year":2012,"publication_date":"2012-11-01","ids":{"openalex":"https://openalex.org/W2077762373","doi":"https://doi.org/10.1109/isocc.2012.6407074","mag":"2077762373"},"language":"en","primary_location":{"id":"doi:10.1109/isocc.2012.6407074","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isocc.2012.6407074","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 International SoC Design Conference (ISOCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071947457","display_name":"Zhao Chuan Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"Zhao Chuan Lee","raw_affiliation_strings":["VIRTUS, Nanyang Technological University, Singapore","Virtus, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798"],"affiliations":[{"raw_affiliation_string":"VIRTUS, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"Virtus, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112386107","display_name":"Kim Ho","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Kim Ming Ho","raw_affiliation_strings":["VIRTUS, Nanyang Technological University, Singapore","Virtus, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798"],"affiliations":[{"raw_affiliation_string":"VIRTUS, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"Virtus, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102243210","display_name":"Zhi Hui Kong","orcid":"https://orcid.org/0009-0004-4522-796X"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Zhi Hui Kong","raw_affiliation_strings":["VIRTUS, Nanyang Technological University, Singapore","Virtus, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798"],"affiliations":[{"raw_affiliation_string":"VIRTUS, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"Virtus, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013775632","display_name":"Tony T. Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Tony T. Kim","raw_affiliation_strings":["VIRTUS, Nanyang Technological University, Singapore","Virtus, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798"],"affiliations":[{"raw_affiliation_string":"VIRTUS, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"Virtus, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5071947457"],"corresponding_institution_ids":["https://openalex.org/I172675005"],"apc_list":null,"apc_paid":null,"fwci":0.7365,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.74906139,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"200","last_page":"203"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.7025930285453796},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.680892288684845},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.659502387046814},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.6137198209762573},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5743651390075684},{"id":"https://openalex.org/keywords/stability","display_name":"Stability (learning theory)","score":0.5599293112754822},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5063599348068237},{"id":"https://openalex.org/keywords/instability","display_name":"Instability","score":0.4589882791042328},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.42001867294311523},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.412930965423584},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3835603594779968},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3789307475090027},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32402652502059937},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3070996403694153},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2527896761894226},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2466951310634613},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.10711085796356201},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10532861948013306}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.7025930285453796},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.680892288684845},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.659502387046814},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.6137198209762573},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5743651390075684},{"id":"https://openalex.org/C112972136","wikidata":"https://www.wikidata.org/wiki/Q7595718","display_name":"Stability (learning theory)","level":2,"score":0.5599293112754822},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5063599348068237},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.4589882791042328},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.42001867294311523},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.412930965423584},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3835603594779968},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3789307475090027},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32402652502059937},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3070996403694153},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2527896761894226},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2466951310634613},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.10711085796356201},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10532861948013306},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/isocc.2012.6407074","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isocc.2012.6407074","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 International SoC Design Conference (ISOCC)","raw_type":"proceedings-article"},{"id":"pmh:oai:dr.ntu.edu.sg:10356/100241","is_oa":false,"landing_page_url":"http://hdl.handle.net/10220/13598","pdf_url":null,"source":{"id":"https://openalex.org/S4306402609","display_name":"DR-NTU (Nanyang Technological University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I172675005","host_organization_name":"Nanyang Technological University","host_organization_lineage":["https://openalex.org/I172675005"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference Paper"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7799999713897705}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1600691640","https://openalex.org/W2069362588","https://openalex.org/W2102729267","https://openalex.org/W2115602281","https://openalex.org/W2122757690","https://openalex.org/W2127190809","https://openalex.org/W2137509664","https://openalex.org/W2138577377","https://openalex.org/W2170333286","https://openalex.org/W2554859980","https://openalex.org/W6679062542"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W3150866391","https://openalex.org/W2942040471","https://openalex.org/W2028220610","https://openalex.org/W2088008649","https://openalex.org/W2112214579","https://openalex.org/W2166033074","https://openalex.org/W2036808971","https://openalex.org/W2573726612","https://openalex.org/W2310523918"],"abstract_inverted_index":{"Negative":[0],"Bias":[1,7],"Temperature":[2,8],"Instability":[3,9],"(NBTI)":[4],"and":[5,34,40,74,89,113,115],"Positive":[6],"(PBTI)":[10],"are":[11],"the":[12,19,30,55,61,64,80,85,91,96,101,106,116,126],"two":[13],"important":[14],"reliability":[15],"issues":[16],"that":[17],"degrade":[18],"SRAM":[20,38,53],"cell":[21,56,93],"stability":[22,43,57,62,68],"over":[23],"time.":[24],"In":[25,51],"this":[26],"paper,":[27],"we":[28],"analyze":[29],"impact":[31],"of":[32,63,87],"NBTI":[33,73,112],"PBTI":[35,114],"on":[36],"8T":[37],"cells,":[39,54,66],"propose":[41],"a":[42,121],"improvement":[44],"technique":[45,78],"without":[46],"using":[47],"boosted":[48],"supply":[49],"voltage.":[50],"decoupled":[52],"is":[58,69,109],"limited":[59],"by":[60,72],"half-selected":[65],"whose":[67],"significantly":[70],"affected":[71],"PBTI.":[75],"The":[76],"proposed":[77],"lowers":[79],"WWL":[81,97,118],"voltage":[82,98],"to":[83,125],"reduce":[84],"amount":[86],"disturbance":[88],"compensate":[90],"degraded":[92],"stability.":[94],"Lowering":[95],"doesn't":[99],"affect":[100],"write":[102,107,122],"margin":[103,108,123],"substantially":[104],"since":[105],"improved":[110],"with":[111],"lowered":[117],"will":[119],"produce":[120],"similar":[124],"original":[127],"one.":[128]},"counts_by_year":[{"year":2018,"cited_by_count":3},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}