{"id":"https://openalex.org/W4416963221","doi":"https://doi.org/10.1109/islped65674.2025.11261762","title":"Energy-Efficient Single-Ended Capacitive PAM-4 Transceiver for Next-Generation HBM Interfaces","display_name":"Energy-Efficient Single-Ended Capacitive PAM-4 Transceiver for Next-Generation HBM Interfaces","publication_year":2025,"publication_date":"2025-08-06","ids":{"openalex":"https://openalex.org/W4416963221","doi":"https://doi.org/10.1109/islped65674.2025.11261762"},"language":null,"primary_location":{"id":"doi:10.1109/islped65674.2025.11261762","is_oa":false,"landing_page_url":"https://doi.org/10.1109/islped65674.2025.11261762","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100623278","display_name":"Jaeyoon Kim","orcid":"https://orcid.org/0000-0002-0723-0664"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jaeyoon Kim","raw_affiliation_strings":["Seoul National University,Dept. of Electrical and Computer Engineering,Seoul,Korea"],"affiliations":[{"raw_affiliation_string":"Seoul National University,Dept. of Electrical and Computer Engineering,Seoul,Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100416603","display_name":"Sangyoon Lee","orcid":"https://orcid.org/0000-0002-7037-736X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangyoon Lee","raw_affiliation_strings":["Samsung Electronics,Memory Business Division,Hwaseong,Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Memory Business Division,Hwaseong,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016065904","display_name":"Jaekwang Yun","orcid":"https://orcid.org/0009-0000-0460-4686"},"institutions":[{"id":"https://openalex.org/I4210089054","display_name":"Seoul Semiconductor (South Korea)","ror":"https://ror.org/007vmjm88","country_code":"KR","type":"company","lineage":["https://openalex.org/I4210089054"]},{"id":"https://openalex.org/I12832649","display_name":"Gachon University","ror":"https://ror.org/03ryywt80","country_code":"KR","type":"education","lineage":["https://openalex.org/I12832649"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaekwang Yun","raw_affiliation_strings":["Gachon University,College of Semiconductor,Dept. of Semiconductor Engineering,Seongnam,Korea"],"affiliations":[{"raw_affiliation_string":"Gachon University,College of Semiconductor,Dept. of Semiconductor Engineering,Seongnam,Korea","institution_ids":["https://openalex.org/I12832649","https://openalex.org/I4210089054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108325484","display_name":"Sanghyuk Seo","orcid":null},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sanghyuk Seo","raw_affiliation_strings":["Seoul National University,Dept. of Electrical and Computer Engineering,Seoul,Korea"],"affiliations":[{"raw_affiliation_string":"Seoul National University,Dept. of Electrical and Computer Engineering,Seoul,Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101519058","display_name":"Kitae Lee","orcid":"https://orcid.org/0000-0002-8294-5272"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwangyeon Lee","raw_affiliation_strings":["Seoul National University,Dept. of Electrical and Computer Engineering,Seoul,Korea"],"affiliations":[{"raw_affiliation_string":"Seoul National University,Dept. of Electrical and Computer Engineering,Seoul,Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023903086","display_name":"Yong-Un Jeong","orcid":"https://orcid.org/0000-0003-0472-0542"},"institutions":[{"id":"https://openalex.org/I28777354","display_name":"Sejong University","ror":"https://ror.org/00aft1q37","country_code":"KR","type":"education","lineage":["https://openalex.org/I28777354"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yong-Un Jeong","raw_affiliation_strings":["Sejong University,Dept. of Semiconductor Systems Engineering,Seoul,Korea"],"affiliations":[{"raw_affiliation_string":"Sejong University,Dept. of Semiconductor Systems Engineering,Seoul,Korea","institution_ids":["https://openalex.org/I28777354"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080332152","display_name":"Suhwan Kim","orcid":"https://orcid.org/0000-0001-9107-2963"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Suhwan Kim","raw_affiliation_strings":["Seoul National University,Dept. of Electrical and Computer Engineering,Seoul,Korea"],"affiliations":[{"raw_affiliation_string":"Seoul National University,Dept. of Electrical and Computer Engineering,Seoul,Korea","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5100623278"],"corresponding_institution_ids":["https://openalex.org/I139264467"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.41017446,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.8460999727249146,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.8460999727249146,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.03889999911189079,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.026799999177455902,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transceiver","display_name":"Transceiver","score":0.7303000092506409},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.7006999850273132},{"id":"https://openalex.org/keywords/capacitive-coupling","display_name":"Capacitive coupling","score":0.5885999798774719},{"id":"https://openalex.org/keywords/capacitive-sensing","display_name":"Capacitive sensing","score":0.5782999992370605},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5467000007629395},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.5175999999046326},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5084999799728394},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.45980000495910645},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4512999951839447}],"concepts":[{"id":"https://openalex.org/C7720470","wikidata":"https://www.wikidata.org/wiki/Q954187","display_name":"Transceiver","level":3,"score":0.7303000092506409},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.7006999850273132},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.6176999807357788},{"id":"https://openalex.org/C68278764","wikidata":"https://www.wikidata.org/wiki/Q444167","display_name":"Capacitive coupling","level":3,"score":0.5885999798774719},{"id":"https://openalex.org/C206755178","wikidata":"https://www.wikidata.org/wiki/Q1131271","display_name":"Capacitive sensing","level":2,"score":0.5782999992370605},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.560699999332428},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5467000007629395},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.5175999999046326},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5084999799728394},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.45980000495910645},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4512999951839447},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.42989999055862427},{"id":"https://openalex.org/C46686674","wikidata":"https://www.wikidata.org/wiki/Q466303","display_name":"Boosting (machine learning)","level":2,"score":0.4016999900341034},{"id":"https://openalex.org/C47798520","wikidata":"https://www.wikidata.org/wiki/Q190157","display_name":"Transmitter","level":3,"score":0.37709999084472656},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.36579999327659607},{"id":"https://openalex.org/C158802814","wikidata":"https://www.wikidata.org/wiki/Q6056418","display_name":"Interposer","level":4,"score":0.364300012588501},{"id":"https://openalex.org/C157808515","wikidata":"https://www.wikidata.org/wiki/Q4781508","display_name":"Filter capacitor","level":4,"score":0.3353999853134155},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.33009999990463257},{"id":"https://openalex.org/C177872590","wikidata":"https://www.wikidata.org/wiki/Q1498289","display_name":"Inductive coupling","level":2,"score":0.3176000118255615},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3028999865055084},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.3009999990463257},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.2833000123500824},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2702000141143799},{"id":"https://openalex.org/C118993495","wikidata":"https://www.wikidata.org/wiki/Q5042828","display_name":"Electrical efficiency","level":3,"score":0.2694000005722046},{"id":"https://openalex.org/C97812054","wikidata":"https://www.wikidata.org/wiki/Q2166055","display_name":"Intersymbol interference","level":3,"score":0.2628999948501587},{"id":"https://openalex.org/C184892835","wikidata":"https://www.wikidata.org/wiki/Q1474513","display_name":"Electromagnetic interference","level":2,"score":0.26030001044273376},{"id":"https://openalex.org/C67337642","wikidata":"https://www.wikidata.org/wiki/Q5275437","display_name":"Diffusion capacitance","level":4,"score":0.25780001282691956},{"id":"https://openalex.org/C35196352","wikidata":"https://www.wikidata.org/wiki/Q1532649","display_name":"Decoupling capacitor","level":4,"score":0.25589999556541443},{"id":"https://openalex.org/C2742236","wikidata":"https://www.wikidata.org/wiki/Q924713","display_name":"Efficient energy use","level":2,"score":0.2556999921798706}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/islped65674.2025.11261762","is_oa":false,"landing_page_url":"https://doi.org/10.1109/islped65674.2025.11261762","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W2006092388","https://openalex.org/W2098808037","https://openalex.org/W2103692532","https://openalex.org/W2103882038","https://openalex.org/W2137417944","https://openalex.org/W2922008269","https://openalex.org/W2949171700","https://openalex.org/W3015969454","https://openalex.org/W3116643975","https://openalex.org/W3135598075","https://openalex.org/W4221062448","https://openalex.org/W4221124511","https://openalex.org/W4286571710","https://openalex.org/W4292261931","https://openalex.org/W4385192407"],"related_works":[],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,112,124,135],"single-ended":[4],"four-level":[5],"pulse-amplitude":[6],"modulation":[7],"(PAM-4)":[8],"transceiver":[9],"for":[10,68],"next-generation":[11],"high":[12],"bandwidth":[13,43],"memory":[14],"(HBM)":[15],"interfaces.":[16],"Since":[17],"HBM":[18],"interfaces":[19,25],"have":[20],"over":[21],"1024":[22],"DQs,":[23],"the":[24,69,79,104],"need":[26],"to":[27,41,56,66,73,98],"improve":[28],"energy":[29,156],"efficiency":[30,157],"and":[31,47,140,161],"minimize":[32],"area.":[33,58],"The":[34,117,146],"proposed":[35],"PAM-4":[36,90],"transmitter":[37],"employs":[38],"capacitive":[39,89],"drivers":[40],"extend":[42],"with":[44,154],"low":[45],"power":[46],"uses":[48],"accumulation-mode":[49],"NFET":[50],"capacitors":[51,55],"as":[52],"AC":[53],"coupling":[54],"reduce":[57],"A":[59,85,129],"high-level":[60],"boosting":[61],"technique":[62,114],"(HLB)":[63],"is":[64,115],"introduced":[65],"compensate":[67],"capacitance":[70],"variation":[71],"according":[72],"output":[74],"voltage":[75],"levels,":[76],"thereby":[77],"improving":[78],"ratio":[80],"of":[81,151,158,163],"level":[82,106],"mismatch":[83],"(RLM).":[84],"feed-forward":[86],"equalization":[87],"(FFE)-combined":[88],"driver":[91],"effectively":[92],"removes":[93],"inter-symbol":[94],"interference":[95],"(ISI),":[96],"leading":[97],"higher":[99],"data":[100,149],"rates.":[101],"To":[102],"define":[103],"DC":[105],"without":[107],"using":[108,123],"dissipated":[109],"static":[110],"power,":[111],"ground-forcing":[113],"applied.":[116],"silicon":[118],"interposer":[119],"channel":[120],"was":[121,132],"emulated":[122],"5.9":[125],"mm":[126],"on-chip":[127],"wire.":[128],"prototype":[130,147],"chip":[131],"fabricated":[133],"in":[134],"28":[136],"nm":[137],"CMOS":[138],"process":[139],"occupied":[141],"0.0039":[142],"mm<sup":[143],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[144],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>.":[145],"achieves":[148],"rates":[150],"16":[152],"Gb/s":[153],"an":[155],"67.2":[159],"fJ/b/mm":[160],"RLM":[162],"0.992.":[164]},"counts_by_year":[],"updated_date":"2026-03-07T16:01:11.037858","created_date":"2025-12-03T00:00:00"}