{"id":"https://openalex.org/W4400810940","doi":"https://doi.org/10.1109/isie54533.2024.10595699","title":"Exploring GaN Semiconductors Power Losses in DAB Converter Simulation via PLECS","display_name":"Exploring GaN Semiconductors Power Losses in DAB Converter Simulation via PLECS","publication_year":2024,"publication_date":"2024-06-18","ids":{"openalex":"https://openalex.org/W4400810940","doi":"https://doi.org/10.1109/isie54533.2024.10595699"},"language":"en","primary_location":{"id":"doi:10.1109/isie54533.2024.10595699","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie54533.2024.10595699","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE 33rd International Symposium on Industrial Electronics (ISIE)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://upcommons.upc.edu/bitstreams/547b17cc-3ca9-448d-93b3-90805e119e54/download","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113296006","display_name":"Eduard Mart\u00ednez","orcid":null},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Eduard Mart\u00ednez","raw_affiliation_strings":["Technical University of Catalonia,Department of Electronics Engineering,Terrassa,Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technical University of Catalonia,Department of Electronics Engineering,Terrassa,Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038176032","display_name":"Jordi Zaragoza","orcid":"https://orcid.org/0000-0002-1463-4560"},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Jordi Zaragoza","raw_affiliation_strings":["Technical University of Catalonia,Department of Electronics Engineering,Terrassa,Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technical University of Catalonia,Department of Electronics Engineering,Terrassa,Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067777626","display_name":"Manuel Lamich Arocas","orcid":"https://orcid.org/0000-0001-7237-3445"},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Manel Lamich","raw_affiliation_strings":["Technical University of Catalonia,Department of Electronics Engineering,Terrassa,Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technical University of Catalonia,Department of Electronics Engineering,Terrassa,Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003480375","display_name":"Gabriel J. Capella","orcid":"https://orcid.org/0000-0002-2159-1351"},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Gabriel Capell\u00e0","raw_affiliation_strings":["Technical University of Catalonia,Department of Electronics Engineering,Terrassa,Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technical University of Catalonia,Department of Electronics Engineering,Terrassa,Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113788897","display_name":"N\u00e9stor Berbel","orcid":null},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"N\u00e9stor Berbel","raw_affiliation_strings":["Technical University of Catalonia,Department of Electronics Engineering,Terrassa,Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technical University of Catalonia,Department of Electronics Engineering,Terrassa,Spain","institution_ids":["https://openalex.org/I9617848"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I9617848"],"apc_list":null,"apc_paid":null,"fwci":0.5267,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.64165557,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9753999710083008,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9753999710083008,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9236999750137329,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9160000085830688,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5926240086555481},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4831070899963379},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.48020634055137634},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.43965408205986023},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4389801323413849},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.4283641576766968},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4259011149406433},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.41987907886505127},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23927262425422668},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.19146645069122314},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1640585958957672}],"concepts":[{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5926240086555481},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4831070899963379},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.48020634055137634},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.43965408205986023},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4389801323413849},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4283641576766968},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4259011149406433},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.41987907886505127},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23927262425422668},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19146645069122314},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1640585958957672},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/isie54533.2024.10595699","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie54533.2024.10595699","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE 33rd International Symposium on Industrial Electronics (ISIE)","raw_type":"proceedings-article"},{"id":"pmh:oai:upcommons.upc.edu:2117/427890","is_oa":true,"landing_page_url":"https://hdl.handle.net/2117/427890","pdf_url":"https://upcommons.upc.edu/bitstreams/547b17cc-3ca9-448d-93b3-90805e119e54/download","source":{"id":"https://openalex.org/S4377196262","display_name":"UPCommons institutional repository (Universitat Polit\u00e8cnica de Catalunya)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I9617848","host_organization_name":"Universitat Polit\u00e8cnica de Catalunya","host_organization_lineage":["https://openalex.org/I9617848"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference report"}],"best_oa_location":{"id":"pmh:oai:upcommons.upc.edu:2117/427890","is_oa":true,"landing_page_url":"https://hdl.handle.net/2117/427890","pdf_url":"https://upcommons.upc.edu/bitstreams/547b17cc-3ca9-448d-93b3-90805e119e54/download","source":{"id":"https://openalex.org/S4377196262","display_name":"UPCommons institutional repository (Universitat Polit\u00e8cnica de Catalunya)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I9617848","host_organization_name":"Universitat Polit\u00e8cnica de Catalunya","host_organization_lineage":["https://openalex.org/I9617848"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference report"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7900000214576721,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320315062","display_name":"Ministerio de Ciencia, Innovaci\u00f3n y Universidades","ror":null}],"has_content":{"grobid_xml":false,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4400810940.pdf"},"referenced_works_count":17,"referenced_works":["https://openalex.org/W1977805619","https://openalex.org/W2043415521","https://openalex.org/W2073353338","https://openalex.org/W2105340803","https://openalex.org/W2113890330","https://openalex.org/W2158114484","https://openalex.org/W2169111572","https://openalex.org/W2343014017","https://openalex.org/W2494106695","https://openalex.org/W2683082250","https://openalex.org/W2990448731","https://openalex.org/W2995482387","https://openalex.org/W3197313479","https://openalex.org/W3204699968","https://openalex.org/W4327926849","https://openalex.org/W4391263277","https://openalex.org/W6740015559"],"related_works":["https://openalex.org/W2784118911","https://openalex.org/W4377000134","https://openalex.org/W2384599920","https://openalex.org/W2082071357","https://openalex.org/W2012298973","https://openalex.org/W2094776484","https://openalex.org/W2345599747","https://openalex.org/W2911053491","https://openalex.org/W1558750184","https://openalex.org/W4382340528"],"abstract_inverted_index":{"New":[0],"power":[1,29,70],"electronics":[2],"switching":[3],"devices":[4,24,52,79],"based":[5],"on":[6,92],"wide":[7,22,41],"band-gap":[8,23,42],"materials":[9,43],"are":[10,53,84,109],"nowadays":[11],"an":[12],"emerging":[13],"alternative":[14],"to":[15,59],"traditional":[16,34],"silicon-based":[17,35],"devices.":[18,36],"The":[19,100],"use":[20],"of":[21,28,40,76,89,104],"enables":[25],"the":[26,38,54,69,74,87,93,105],"reduction":[27],"losses":[30,71,95,103],"compared":[31],"with":[32],"using":[33,111],"Among":[37],"variety":[39],"available,":[44],"Silicon":[45],"Carbide":[46],"(SiC)":[47],"and":[48,63,98,102,113],"Gallium":[49],"Nitride":[50],"(GaN)":[51],"most":[55],"commonly":[56],"used":[57],"due":[58],"their":[60],"excellent":[61],"properties":[62],"market":[64],"availability.":[65],"In":[66],"this":[67],"paper":[68],"produced":[72],"by":[73],"operation":[75],"GaN":[77],"e-HEMT":[78],"in":[80],"a":[81],"DAB":[82],"Converter":[83],"explored.":[85],"Additionally,":[86],"influence":[88],"modulation":[90],"technique":[91],"converter":[94],"is":[96],"analyzed":[97],"compared.":[99],"performance":[101],"mentioned":[106],"semiconductor":[107],"technology":[108],"acquired":[110],"MATLAB/Simulink":[112],"PLECS.":[114]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2}],"updated_date":"2026-07-02T09:51:11.867554","created_date":"2025-10-10T00:00:00"}