{"id":"https://openalex.org/W2966547794","doi":"https://doi.org/10.1109/isie.2019.8781360","title":"Considerations for Controlled Switching of the Power GaN HEMT","display_name":"Considerations for Controlled Switching of the Power GaN HEMT","publication_year":2019,"publication_date":"2019-06-01","ids":{"openalex":"https://openalex.org/W2966547794","doi":"https://doi.org/10.1109/isie.2019.8781360","mag":"2966547794"},"language":"en","primary_location":{"id":"doi:10.1109/isie.2019.8781360","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie.2019.8781360","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 28th International Symposium on Industrial Electronics (ISIE)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5090621082","display_name":"Patrick Palmer","orcid":"https://orcid.org/0009-0005-0736-0273"},"institutions":[{"id":"https://openalex.org/I18014758","display_name":"Simon Fraser University","ror":"https://ror.org/0213rcc28","country_code":"CA","type":"education","lineage":["https://openalex.org/I18014758"]}],"countries":["CA"],"is_corresponding":true,"raw_author_name":"Patrick Palmer","raw_affiliation_strings":["Mechatronic Systems Engineering, Simon Fraser University, Surrey, BC, Canada"],"affiliations":[{"raw_affiliation_string":"Mechatronic Systems Engineering, Simon Fraser University, Surrey, BC, Canada","institution_ids":["https://openalex.org/I18014758"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100425397","display_name":"Tianqi Zhang","orcid":"https://orcid.org/0009-0001-4331-4128"},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Tianqi Zhang","raw_affiliation_strings":["Department of Engineering, University of Cambridge, Cambridge, United Kingdom"],"affiliations":[{"raw_affiliation_string":"Department of Engineering, University of Cambridge, Cambridge, United Kingdom","institution_ids":["https://openalex.org/I241749"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100416762","display_name":"Teng Long","orcid":"https://orcid.org/0000-0003-4401-102X"},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Teng Long","raw_affiliation_strings":["Department of Engineering, University of Cambridge, Cambridge, United Kingdom"],"affiliations":[{"raw_affiliation_string":"Department of Engineering, University of Cambridge, Cambridge, United Kingdom","institution_ids":["https://openalex.org/I241749"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042051330","display_name":"Luke Schillaber","orcid":null},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Luke Schillaber","raw_affiliation_strings":["Department of Engineering, University of Cambridge, Cambridge, United Kingdom"],"affiliations":[{"raw_affiliation_string":"Department of Engineering, University of Cambridge, Cambridge, United Kingdom","institution_ids":["https://openalex.org/I241749"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050543520","display_name":"Edward Shelton","orcid":"https://orcid.org/0000-0002-0593-0982"},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Edward Shelton","raw_affiliation_strings":["Department of Engineering, University of Cambridge, Cambridge, United Kingdom"],"affiliations":[{"raw_affiliation_string":"Department of Engineering, University of Cambridge, Cambridge, United Kingdom","institution_ids":["https://openalex.org/I241749"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5090621082"],"corresponding_institution_ids":["https://openalex.org/I18014758"],"apc_list":null,"apc_paid":null,"fwci":0.2385,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.54626972,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"775","last_page":"779"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.9593615531921387},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5553879141807556},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5298827886581421},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5290713906288147},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4907866418361664},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4531552791595459},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4351944029331207},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.4337167739868164},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39346376061439514},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3846231997013092},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3711286187171936},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.33839818835258484},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2466113269329071},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.20227015018463135},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10345134139060974},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.06902772188186646},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.06432726979255676}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.9593615531921387},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5553879141807556},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5298827886581421},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5290713906288147},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4907866418361664},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4531552791595459},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4351944029331207},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4337167739868164},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39346376061439514},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3846231997013092},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3711286187171936},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.33839818835258484},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2466113269329071},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.20227015018463135},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10345134139060974},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.06902772188186646},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.06432726979255676},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isie.2019.8781360","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie.2019.8781360","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 28th International Symposium on Industrial Electronics (ISIE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7099999785423279}],"awards":[{"id":"https://openalex.org/G4669253107","display_name":null,"funder_award_id":"EP/L021579/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"}],"funders":[{"id":"https://openalex.org/F4320334627","display_name":"Engineering and Physical Sciences Research Council","ror":"https://ror.org/0439y7842"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1966967145","https://openalex.org/W2092332957","https://openalex.org/W2289885027","https://openalex.org/W2770878168","https://openalex.org/W2770915292","https://openalex.org/W2775248108","https://openalex.org/W2904801270","https://openalex.org/W6696461999"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W1975307200","https://openalex.org/W3088454288","https://openalex.org/W2466508933","https://openalex.org/W2003184216","https://openalex.org/W2911053491","https://openalex.org/W2550502560"],"abstract_inverted_index":{"This":[0],"paper":[1,42],"presents":[2],"characteristics":[3],"of":[4,12,46,64,85],"the":[5,13,41,47,81],"GaN":[6,14,59,65,86],"HEMT":[7,60,66],"and":[8,28,40,52,77,83],"proposes":[9],"controlled":[10],"switching":[11,25],"Power":[15,87],"HEMT.":[16],"An":[17],"experimental":[18,22],"implementation":[19],"is":[20,34,54],"described,":[21],"current":[23],"drive":[24],"results":[26,37],"presented":[27],"a":[29],"closed":[30,57],"loop":[31,58],"control":[32],"strategy":[33],"suggested.":[35],"Simulation":[36],"are":[38,68],"presented,":[39],"gives":[43],"full":[44],"details":[45],"circuits":[48],"used.":[49],"Controlled":[50],"di/dt":[51],"dV/dt":[53],"obtained":[55],"using":[56],"switching.":[61],"The":[62],"advantages":[63],"devices":[67],"discussed":[69],"in":[70],"comparison":[71],"with":[72],"Super":[73],"Junction":[74],"Si":[75],"MOSFETs":[76],"conclusions":[78],"drawn":[79],"regarding":[80],"performance":[82],"use":[84],"Transistors.":[88]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}