{"id":"https://openalex.org/W2743766043","doi":"https://doi.org/10.1109/isie.2017.8001580","title":"Logic gates and memory elements design and simulation using PMOS organic transistor","display_name":"Logic gates and memory elements design and simulation using PMOS organic transistor","publication_year":2017,"publication_date":"2017-06-01","ids":{"openalex":"https://openalex.org/W2743766043","doi":"https://doi.org/10.1109/isie.2017.8001580","mag":"2743766043"},"language":"en","primary_location":{"id":"doi:10.1109/isie.2017.8001580","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie.2017.8001580","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 26th International Symposium on Industrial Electronics (ISIE)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042637066","display_name":"P. Branchini","orcid":"https://orcid.org/0000-0002-2270-9673"},"institutions":[{"id":"https://openalex.org/I4210090266","display_name":"Istituto Nazionale di Fisica Nucleare, Sezione di Roma Tre","ror":"https://ror.org/009wnjh50","country_code":"IT","type":"facility","lineage":["https://openalex.org/I160013858","https://openalex.org/I4210090266"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"P. Branchini","raw_affiliation_strings":["INFN Sezione di Roma Tre, Roma, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INFN Sezione di Roma Tre, Roma, Italy","institution_ids":["https://openalex.org/I4210090266"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016319394","display_name":"A. Fabbh","orcid":null},"institutions":[{"id":"https://openalex.org/I4210151851","display_name":"Istituto Nazionale di Fisica Nucleare, Sezione di Trieste","ror":"https://ror.org/05j3snm48","country_code":"IT","type":"facility","lineage":["https://openalex.org/I160013858","https://openalex.org/I4210151851"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Fabbh","raw_affiliation_strings":["Istituto Nazionale di Fisica Nucleare Sezione di Trieste, Trieste, Friuli-Venezia Giulia, IT"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Istituto Nazionale di Fisica Nucleare Sezione di Trieste, Trieste, Friuli-Venezia Giulia, IT","institution_ids":["https://openalex.org/I4210151851"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032602874","display_name":"D. Riondino","orcid":null},"institutions":[{"id":"https://openalex.org/I4210090266","display_name":"Istituto Nazionale di Fisica Nucleare, Sezione di Roma Tre","ror":"https://ror.org/009wnjh50","country_code":"IT","type":"facility","lineage":["https://openalex.org/I160013858","https://openalex.org/I4210090266"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"D. Riondino","raw_affiliation_strings":["INFN Sezione di Roma Tre, Roma, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INFN Sezione di Roma Tre, Roma, Italy","institution_ids":["https://openalex.org/I4210090266"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058987996","display_name":"L. Mariucci","orcid":"https://orcid.org/0000-0003-1872-0009"},"institutions":[{"id":"https://openalex.org/I4210165120","display_name":"Institute for Microelectronics and Microsystems","ror":"https://ror.org/05vk2g845","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210165120"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"L. Mariucci","raw_affiliation_strings":["IMM-CNR, Roma, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMM-CNR, Roma, Italy","institution_ids":["https://openalex.org/I4210165120"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084476034","display_name":"Matteo Rapisarda","orcid":"https://orcid.org/0000-0002-2629-3855"},"institutions":[{"id":"https://openalex.org/I4210165120","display_name":"Institute for Microelectronics and Microsystems","ror":"https://ror.org/05vk2g845","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210165120"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Rapisarda","raw_affiliation_strings":["IMM-CNR, Roma, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMM-CNR, Roma, Italy","institution_ids":["https://openalex.org/I4210165120"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083035565","display_name":"A. Valletta","orcid":"https://orcid.org/0000-0002-3901-9230"},"institutions":[{"id":"https://openalex.org/I4210165120","display_name":"Institute for Microelectronics and Microsystems","ror":"https://ror.org/05vk2g845","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210165120"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Valletta","raw_affiliation_strings":["IMM-CNR, Roma, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMM-CNR, Roma, Italy","institution_ids":["https://openalex.org/I4210165120"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057778512","display_name":"A. Aloisio","orcid":"https://orcid.org/0000-0002-3883-6693"},"institutions":[{"id":"https://openalex.org/I4210108560","display_name":"Istituto Nazionale di Fisica Nucleare, Sezione di Napoli","ror":"https://ror.org/015kcdd40","country_code":"IT","type":"facility","lineage":["https://openalex.org/I160013858","https://openalex.org/I4210108560"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Aloisio","raw_affiliation_strings":["Department of Physics, University of Naples and INFN Sezione di Napoli, Napoli, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, University of Naples and INFN Sezione di Napoli, Napoli, Italy","institution_ids":["https://openalex.org/I4210108560"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032441889","display_name":"F. Di Capua","orcid":"https://orcid.org/0000-0001-9076-5936"},"institutions":[{"id":"https://openalex.org/I4210108560","display_name":"Istituto Nazionale di Fisica Nucleare, Sezione di Napoli","ror":"https://ror.org/015kcdd40","country_code":"IT","type":"facility","lineage":["https://openalex.org/I160013858","https://openalex.org/I4210108560"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"F. Di Capua","raw_affiliation_strings":["Department of Physics, University of Naples and INFN Sezione di Napoli, Napoli, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, University of Naples and INFN Sezione di Napoli, Napoli, Italy","institution_ids":["https://openalex.org/I4210108560"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.09483886,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"53","issue":null,"first_page":"2097","last_page":"2101"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.8735984563827515},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7713385820388794},{"id":"https://openalex.org/keywords/pentacene","display_name":"Pentacene","score":0.6458985209465027},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5855717062950134},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5710766911506653},{"id":"https://openalex.org/keywords/fluoropolymer","display_name":"Fluoropolymer","score":0.5605061650276184},{"id":"https://openalex.org/keywords/organic-semiconductor","display_name":"Organic semiconductor","score":0.5402938723564148},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.4688008427619934},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.42919570207595825},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4268070459365845},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.3430575430393219},{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.30564308166503906},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.29922574758529663},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2777128219604492},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.22469192743301392},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11243000626564026},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.08860766887664795},{"id":"https://openalex.org/keywords/polymer","display_name":"Polymer","score":0.07680737972259521},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07220098376274109}],"concepts":[{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.8735984563827515},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7713385820388794},{"id":"https://openalex.org/C2776498980","wikidata":"https://www.wikidata.org/wiki/Q424450","display_name":"Pentacene","level":4,"score":0.6458985209465027},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5855717062950134},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5710766911506653},{"id":"https://openalex.org/C2780708225","wikidata":"https://www.wikidata.org/wiki/Q1818706","display_name":"Fluoropolymer","level":3,"score":0.5605061650276184},{"id":"https://openalex.org/C94003879","wikidata":"https://www.wikidata.org/wiki/Q1933714","display_name":"Organic semiconductor","level":2,"score":0.5402938723564148},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.4688008427619934},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.42919570207595825},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4268070459365845},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3430575430393219},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.30564308166503906},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.29922574758529663},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2777128219604492},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22469192743301392},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11243000626564026},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.08860766887664795},{"id":"https://openalex.org/C521977710","wikidata":"https://www.wikidata.org/wiki/Q81163","display_name":"Polymer","level":2,"score":0.07680737972259521},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07220098376274109}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isie.2017.8001580","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie.2017.8001580","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 26th International Symposium on Industrial Electronics (ISIE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5400000214576721,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1967959555","https://openalex.org/W2000415031","https://openalex.org/W2025029959","https://openalex.org/W2029610735","https://openalex.org/W2054040420","https://openalex.org/W2061166289","https://openalex.org/W2072154614","https://openalex.org/W2101488195","https://openalex.org/W2104630284","https://openalex.org/W2115807022","https://openalex.org/W2120859614","https://openalex.org/W2161489509","https://openalex.org/W2223566018","https://openalex.org/W2288068729","https://openalex.org/W2299201132","https://openalex.org/W2343404507","https://openalex.org/W2557903837","https://openalex.org/W2975328275","https://openalex.org/W6698059807"],"related_works":["https://openalex.org/W1672212109","https://openalex.org/W1659361939","https://openalex.org/W3016315581","https://openalex.org/W2320256294","https://openalex.org/W2781961538","https://openalex.org/W2016145601","https://openalex.org/W1483987823","https://openalex.org/W2011871296","https://openalex.org/W2461651524","https://openalex.org/W2134257207"],"abstract_inverted_index":{"Multi-flngered":[0],"OTFTs,":[1],"with":[2],"staggered":[3],"top-gate":[4],"configuration":[5],"have":[6,36,69,80],"been":[7,21,37,70,81,90],"fabricated":[8],"on":[9,97],"flexible":[10],"polyethylene-naphtalate":[11],"(PEN)":[12],"substrates":[13],"(100":[14],"\u03bcm":[15],"thick).":[16],"Inkjet":[17],"printing":[18],"technique":[19],"has":[20,89],"used":[22,91],"to":[23,92],"setup":[24],"the":[25,29,33,60,106],"silver":[26],"contacts,":[27],"while":[28,59],"organic":[30,119],"layers":[31],"and":[32,72,75,83,113,121],"dielectric":[34,61],"fluoropolymer":[35,62],"deposited":[38],"by":[39],"spin-coating.":[40],"The":[41,51],"p-type":[42],"polymeric":[43],"semiconductor":[44,52],"is":[45,55,63],"a":[46,73,76,99],"solution":[47],"processed":[48],"6,13-bis(triisopropyl-silyletynyl)":[49],"pentacene.":[50],"layer":[53],"thickness":[54],"about":[56],"30":[57],"nm,":[58],"400":[64],"nm":[65],"thick.":[66],"These":[67],"transistors":[68],"characterized":[71],"DC,":[74],"transient":[77],"accurate":[78],"models":[79],"developed":[82],"imported":[84],"in":[85],"CADENCE.":[86],"Finally,":[87],"SPECTRE":[88],"simulate":[93],"model":[94],"circuits":[95],"based":[96],"such":[98],"device.":[100],"In":[101],"this":[102],"work":[103],"we":[104],"describe":[105],"design":[107],"of":[108],"high":[109],"frequency":[110],"logic":[111],"gates":[112],"preliminary":[114],"flip-flops":[115],"design,":[116],"exploiting":[117],"PMOS":[118],"transistor":[120],"its":[122],"expected":[123],"performances.":[124]},"counts_by_year":[{"year":2022,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}