{"id":"https://openalex.org/W2743171756","doi":"https://doi.org/10.1109/isie.2017.8001316","title":"Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switch","display_name":"Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switch","publication_year":2017,"publication_date":"2017-06-01","ids":{"openalex":"https://openalex.org/W2743171756","doi":"https://doi.org/10.1109/isie.2017.8001316","mag":"2743171756"},"language":"en","primary_location":{"id":"doi:10.1109/isie.2017.8001316","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie.2017.8001316","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 26th International Symposium on Industrial Electronics (ISIE)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5013203535","display_name":"Peng Luo","orcid":"https://orcid.org/0000-0002-3552-9516"},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Peng Luo","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109970613","display_name":"Hong Yao Long","orcid":null},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Hong Yao Long","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061620913","display_name":"M. Sweet","orcid":null},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Mark R. Sweet","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091307828","display_name":"M.M. De Souza","orcid":"https://orcid.org/0000-0002-7804-7154"},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"M. M. De Souza","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK","ECO Semiconductors Ltd, Leicester, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK","institution_ids":["https://openalex.org/I91136226"]},{"raw_affiliation_string":"ECO Semiconductors Ltd, Leicester, UK","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075547315","display_name":"E.M. Sankara Narayanan","orcid":"https://orcid.org/0000-0001-6832-1300"},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"E. M. S. Narayanan","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK","ECO Semiconductors Ltd, Leicester, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK","institution_ids":["https://openalex.org/I91136226"]},{"raw_affiliation_string":"ECO Semiconductors Ltd, Leicester, UK","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I91136226"],"apc_list":null,"apc_paid":null,"fwci":0.7564,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.62694673,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"612","last_page":"615"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9961000084877014,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.8290152549743652},{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.7099767923355103},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6415756940841675},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5835341215133667},{"id":"https://openalex.org/keywords/thyristor","display_name":"Thyristor","score":0.5693883299827576},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4896414875984192},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4732021987438202},{"id":"https://openalex.org/keywords/carbide","display_name":"Carbide","score":0.44912341237068176},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.4317903220653534},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4110533893108368},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3841661810874939},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37498268485069275},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3367522656917572},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24085134267807007},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20861035585403442},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.18351945281028748},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.08579695224761963},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.06917724013328552}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.8290152549743652},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.7099767923355103},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6415756940841675},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5835341215133667},{"id":"https://openalex.org/C121922863","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Thyristor","level":3,"score":0.5693883299827576},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4896414875984192},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4732021987438202},{"id":"https://openalex.org/C5335593","wikidata":"https://www.wikidata.org/wiki/Q241906","display_name":"Carbide","level":2,"score":0.44912341237068176},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.4317903220653534},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4110533893108368},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3841661810874939},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37498268485069275},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3367522656917572},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24085134267807007},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20861035585403442},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18351945281028748},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.08579695224761963},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.06917724013328552},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/isie.2017.8001316","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie.2017.8001316","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 26th International Symposium on Industrial Electronics (ISIE)","raw_type":"proceedings-article"},{"id":"pmh:oai:eprints.whiterose.ac.uk:130498","is_oa":false,"landing_page_url":"https://eprints.whiterose.ac.uk/130498/","pdf_url":null,"source":{"id":"https://openalex.org/S4306400854","display_name":"White Rose Research Online (University of Leeds, The University of Sheffield, University of York)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I2800616092","host_organization_name":"White Rose University Consortium","host_organization_lineage":["https://openalex.org/I2800616092"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Proceedings Paper"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6700000166893005}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1485993039","https://openalex.org/W1925117859","https://openalex.org/W1968581984","https://openalex.org/W2059470985","https://openalex.org/W2062922972","https://openalex.org/W2073685840","https://openalex.org/W2077858480","https://openalex.org/W2122796842","https://openalex.org/W2153667897"],"related_works":["https://openalex.org/W4213279392","https://openalex.org/W2379676388","https://openalex.org/W2725874044","https://openalex.org/W2365452505","https://openalex.org/W2168200483","https://openalex.org/W2187095416","https://openalex.org/W2123056991","https://openalex.org/W1548482929","https://openalex.org/W1918297947","https://openalex.org/W2966234605"],"abstract_inverted_index":{"In":[0,52],"this":[1],"paper,":[2],"a":[3,7,13,63],"parallel":[4],"arrangement":[5],"of":[6],"silicon":[8,14],"MOS-gated":[9],"thyristor":[10],"structure":[11],"and":[12,20],"carbide":[15],"Power":[16],"MOSFET":[17],"is":[18],"proposed":[19],"experimentally":[21],"demonstrated":[22],"for":[23],"the":[24,31,59],"first":[25],"time.":[26],"Experimental":[27],"results":[28],"show":[29],"that":[30],"hybrid":[32,60],"switch":[33,61],"exhibits":[34,62],"low":[35,39],"conduction":[36],"losses":[37],"at":[38,48],"current":[40,50],"levels":[41],"as":[42,44],"well":[43],"large":[45],"current-carrying":[46],"capability":[47],"high":[49],"levels.":[51],"addition,":[53],"compared":[54],"to":[55],"Clustered":[56],"IGBT":[57],"structure,":[58],"43%":[64],"reduction":[65],"in":[66,70],"Eoffwithout":[67],"any":[68],"increase":[69],"Vce(sat)at":[71],"150\u00b0C.":[72]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-08-27T14:10:00.468798","created_date":"2025-10-10T00:00:00"}