{"id":"https://openalex.org/W2096546802","doi":"https://doi.org/10.1109/isie.2014.6864648","title":"Analysis and characterization of power MOSFETs for power converters energy&reliability-aware-design","display_name":"Analysis and characterization of power MOSFETs for power converters energy&reliability-aware-design","publication_year":2014,"publication_date":"2014-06-01","ids":{"openalex":"https://openalex.org/W2096546802","doi":"https://doi.org/10.1109/isie.2014.6864648","mag":"2096546802"},"language":"en","primary_location":{"id":"doi:10.1109/isie.2014.6864648","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie.2014.6864648","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE 23rd International Symposium on Industrial Electronics (ISIE)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5032351867","display_name":"Giulia Di Capua","orcid":"https://orcid.org/0000-0002-3786-6751"},"institutions":[{"id":"https://openalex.org/I131729948","display_name":"University of Salerno","ror":"https://ror.org/0192m2k53","country_code":"IT","type":"education","lineage":["https://openalex.org/I131729948"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"G. Di Capua","raw_affiliation_strings":["DIEM, University of Salerno, Fisciano, SA, Italy","[DIEM, University of Salerno, Fisciano, Italy]"],"affiliations":[{"raw_affiliation_string":"DIEM, University of Salerno, Fisciano, SA, Italy","institution_ids":["https://openalex.org/I131729948"]},{"raw_affiliation_string":"[DIEM, University of Salerno, Fisciano, Italy]","institution_ids":["https://openalex.org/I131729948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079747168","display_name":"N. Femia","orcid":"https://orcid.org/0000-0003-0313-1869"},"institutions":[{"id":"https://openalex.org/I131729948","display_name":"University of Salerno","ror":"https://ror.org/0192m2k53","country_code":"IT","type":"education","lineage":["https://openalex.org/I131729948"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"N. Femia","raw_affiliation_strings":["DIEM, University of Salerno, Fisciano, SA, Italy","[DIEM, University of Salerno, Fisciano, Italy]"],"affiliations":[{"raw_affiliation_string":"DIEM, University of Salerno, Fisciano, SA, Italy","institution_ids":["https://openalex.org/I131729948"]},{"raw_affiliation_string":"[DIEM, University of Salerno, Fisciano, Italy]","institution_ids":["https://openalex.org/I131729948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068300293","display_name":"D. Toledo","orcid":null},"institutions":[{"id":"https://openalex.org/I131729948","display_name":"University of Salerno","ror":"https://ror.org/0192m2k53","country_code":"IT","type":"education","lineage":["https://openalex.org/I131729948"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"D. Toledo","raw_affiliation_strings":["DIEM, University of Salerno, Fisciano, SA, Italy","[DIEM, University of Salerno, Fisciano, Italy]"],"affiliations":[{"raw_affiliation_string":"DIEM, University of Salerno, Fisciano, SA, Italy","institution_ids":["https://openalex.org/I131729948"]},{"raw_affiliation_string":"[DIEM, University of Salerno, Fisciano, Italy]","institution_ids":["https://openalex.org/I131729948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001226568","display_name":"Luigi Abbatelli","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"L. Abbatelli","raw_affiliation_strings":["STMicroelectronics, Catania, Italy","STMicroelectron., Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"STMicroelectron., Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5060736035","display_name":"Gaetano Bazzano","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Bazzano","raw_affiliation_strings":["STMicroelectronics, Catania, Italy","STMicroelectron., Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"STMicroelectron., Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5032351867"],"corresponding_institution_ids":["https://openalex.org/I131729948"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.13117704,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"3","issue":null,"first_page":"410","last_page":"415"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/converters","display_name":"Converters","score":0.8070743083953857},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7096911668777466},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.6377096772193909},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.6192999482154846},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5511319041252136},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.5239213109016418},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4707796275615692},{"id":"https://openalex.org/keywords/sensitivity","display_name":"Sensitivity (control systems)","score":0.4415946900844574},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.43442755937576294},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4102402627468109},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3813876211643219},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3768613934516907},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3438366651535034},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.30182647705078125},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16673076152801514},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08310416340827942}],"concepts":[{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.8070743083953857},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7096911668777466},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.6377096772193909},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.6192999482154846},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5511319041252136},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.5239213109016418},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4707796275615692},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.4415946900844574},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.43442755937576294},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4102402627468109},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3813876211643219},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3768613934516907},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3438366651535034},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.30182647705078125},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16673076152801514},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08310416340827942},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isie.2014.6864648","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie.2014.6864648","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE 23rd International Symposium on Industrial Electronics (ISIE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W615245385","https://openalex.org/W629861200","https://openalex.org/W1553684259","https://openalex.org/W1560773528","https://openalex.org/W2052137066","https://openalex.org/W2121555810","https://openalex.org/W2135328234","https://openalex.org/W2164584692","https://openalex.org/W2167640325","https://openalex.org/W2540403233","https://openalex.org/W6619136999","https://openalex.org/W6633766928"],"related_works":["https://openalex.org/W2385412623","https://openalex.org/W1970310371","https://openalex.org/W2258872751","https://openalex.org/W2543878150","https://openalex.org/W2082505892","https://openalex.org/W2538025369","https://openalex.org/W2186533392","https://openalex.org/W2993176810","https://openalex.org/W2072984677","https://openalex.org/W3006564841"],"abstract_inverted_index":{"This":[0],"paper":[1],"discusses":[2],"the":[3,29,86,92,96],"impact":[4,90],"of":[5,31,57,95],"Power":[6],"MOSFETs":[7],"(PMs)":[8],"Capacitance-Voltage":[9],"(C-V)":[10],"characteristics":[11],"on":[12],"switching":[13],"losses":[14,34],"in":[15,45,53,68,99],"power":[16,33,60],"converters.":[17],"A":[18],"fast":[19],"and":[20,52,74,91],"robustly":[21],"convergent":[22],"numerical":[23],"technique":[24,42,98],"is":[25],"adopted":[26],"to":[27,37,80],"analyze":[28],"sensitivity":[30],"PMs":[32,50,58,87,100],"with":[35],"respect":[36],"their":[38],"C-V":[39,88],"shapes.":[40],"Such":[41],"helps":[43],"both":[44],"identifying":[46],"desirable":[47],"specifications":[48],"for":[49,59,77],"design,":[51],"achieving":[54],"appropriate":[55],"selection":[56],"converters":[61],"energy&reliability":[62],"aware":[63],"design.":[64,101],"The":[65],"results":[66],"presented":[67],"this":[69],"paper,":[70],"concerning":[71],"loss":[72],"analysis":[73],"experimental":[75],"verification":[76],"a":[78],"85V":[79],"170V@0.5A":[81],"dc-dc":[82],"boost":[83],"converter,":[84],"highlight":[85],"curves":[89],"valuable":[93],"support":[94],"proposed":[97]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}