{"id":"https://openalex.org/W2165943515","doi":"https://doi.org/10.1109/isie.2012.6237063","title":"A novel gate driver with output voltage having triple input voltage","display_name":"A novel gate driver with output voltage having triple input voltage","publication_year":2012,"publication_date":"2012-05-01","ids":{"openalex":"https://openalex.org/W2165943515","doi":"https://doi.org/10.1109/isie.2012.6237063","mag":"2165943515"},"language":"en","primary_location":{"id":"doi:10.1109/isie.2012.6237063","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie.2012.6237063","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE International Symposium on Industrial Electronics","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5081151698","display_name":"K. I. Hwu","orcid":"https://orcid.org/0000-0002-3344-4842"},"institutions":[{"id":"https://openalex.org/I118292597","display_name":"National Taipei University of Technology","ror":"https://ror.org/00cn92c09","country_code":"TW","type":"education","lineage":["https://openalex.org/I118292597"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"K. I. Hwu","raw_affiliation_strings":["Department of Electrical Engineering, National Taipei University of Technology, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Taipei University of Technology, Taiwan","institution_ids":["https://openalex.org/I118292597"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5056151114","display_name":"Y. T. Yau","orcid":"https://orcid.org/0000-0002-7745-716X"},"institutions":[{"id":"https://openalex.org/I118292597","display_name":"National Taipei University of Technology","ror":"https://ror.org/00cn92c09","country_code":"TW","type":"education","lineage":["https://openalex.org/I118292597"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y. T. Yau","raw_affiliation_strings":["Department of Electrical Engineering, National Taipei University of Technology, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Taipei University of Technology, Taiwan","institution_ids":["https://openalex.org/I118292597"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I118292597"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"1","issue":null,"first_page":"82","last_page":"85"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.7564009428024292},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5926974415779114},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5839943289756775},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.5618642568588257},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5584438443183899},{"id":"https://openalex.org/keywords/overdrive-voltage","display_name":"Overdrive voltage","score":0.5062276721000671},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4879142940044403},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.45293644070625305},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.445756196975708},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.4151771664619446},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3981297016143799},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.3700402081012726},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3673866391181946},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27211201190948486},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19798892736434937},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16342389583587646}],"concepts":[{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.7564009428024292},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5926974415779114},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5839943289756775},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5618642568588257},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5584438443183899},{"id":"https://openalex.org/C195905723","wikidata":"https://www.wikidata.org/wiki/Q7113634","display_name":"Overdrive voltage","level":5,"score":0.5062276721000671},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4879142940044403},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.45293644070625305},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.445756196975708},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.4151771664619446},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3981297016143799},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.3700402081012726},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3673866391181946},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27211201190948486},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19798892736434937},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16342389583587646},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isie.2012.6237063","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isie.2012.6237063","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE International Symposium on Industrial Electronics","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8500000238418579}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321040","display_name":"National Science Council","ror":"https://ror.org/02kv4zf79"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1485168111","https://openalex.org/W2097216582","https://openalex.org/W2114752953","https://openalex.org/W2131828836","https://openalex.org/W2135752020","https://openalex.org/W2137068422","https://openalex.org/W2149318660","https://openalex.org/W2154203875","https://openalex.org/W2163012716","https://openalex.org/W2166157325","https://openalex.org/W2551725631","https://openalex.org/W6628974813"],"related_works":["https://openalex.org/W2765658763","https://openalex.org/W4254968926","https://openalex.org/W1997894899","https://openalex.org/W1977042749","https://openalex.org/W2542162669","https://openalex.org/W4297923311","https://openalex.org/W2121451436","https://openalex.org/W2115248544","https://openalex.org/W1586663246","https://openalex.org/W1979734172"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,22,51],"gate":[4,23,52,61,76],"driver,":[5],"which":[6],"has":[7],"the":[8,27,34,37,43,56,60,63,71,80,84,92,111,114],"output":[9],"voltage":[10,14,30],"with":[11],"triple":[12],"input":[13],"under":[15],"only":[16],"one":[17],"positive-voltage":[18],"source":[19],"fed.":[20],"Such":[21],"driver":[24,53,77],"can":[25,54,78],"reduce":[26,55,79],"number":[28],"of":[29,36,45,47,59,62,83,113],"sources,":[31],"and":[32,68,89,101,104],"hence":[33,69,90],"size":[35],"overall":[38],"system":[39],"is":[40],"compact.":[41],"From":[42],"point":[44],"view":[46],"power":[48,66,87],"loss,":[49,73],"such":[50],"transient":[57],"period":[58],"n-channel":[64,85],"MOSFET":[65,86],"switch":[67,88],"decreases":[70,91],"switching":[72],"whereas":[74],"this":[75],"turn-on":[81],"resistance":[82],"conduction":[93],"loss.":[94],"The":[95],"detailed":[96],"operating":[97],"principles":[98],"are":[99,107],"illustrated":[100],"some":[102],"simulated":[103],"experimental":[105],"results":[106],"provided":[108],"to":[109],"verify":[110],"effectiveness":[112],"proposed":[115],"topology.":[116]},"counts_by_year":[],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}