{"id":"https://openalex.org/W2580613426","doi":"https://doi.org/10.1109/isicir.2016.7829726","title":"ESD protection design for high-speed circuits in nanoscale CMOS process","display_name":"ESD protection design for high-speed circuits in nanoscale CMOS process","publication_year":2016,"publication_date":"2016-12-01","ids":{"openalex":"https://openalex.org/W2580613426","doi":"https://doi.org/10.1109/isicir.2016.7829726","mag":"2580613426"},"language":"en","primary_location":{"id":"doi:10.1109/isicir.2016.7829726","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isicir.2016.7829726","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 International Symposium on Integrated Circuits (ISIC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002476065","display_name":"Chun\u2010Yu Lin","orcid":"https://orcid.org/0000-0003-3375-520X"},"institutions":[{"id":"https://openalex.org/I134161618","display_name":"National Taiwan Normal University","ror":"https://ror.org/059dkdx38","country_code":"TW","type":"education","lineage":["https://openalex.org/I134161618"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chun-Yu Lin","raw_affiliation_strings":["Department of Electrical Engineering, National Taiwan Normal University, Taipei, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Taiwan Normal University, Taipei, Taiwan","institution_ids":["https://openalex.org/I134161618"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077127801","display_name":"Rong-Kun Chang","orcid":"https://orcid.org/0000-0002-7683-2669"},"institutions":[{"id":"https://openalex.org/I134161618","display_name":"National Taiwan Normal University","ror":"https://ror.org/059dkdx38","country_code":"TW","type":"education","lineage":["https://openalex.org/I134161618"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Rong-Kun Chang","raw_affiliation_strings":["Department of Electrical Engineering, National Taiwan Normal University, Taipei, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Taiwan Normal University, Taipei, Taiwan","institution_ids":["https://openalex.org/I134161618"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I134161618"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.23472333,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.7951560020446777},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.626614511013031},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.5898095369338989},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5685835480690002},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5135100483894348},{"id":"https://openalex.org/keywords/inductor","display_name":"Inductor","score":0.5083279013633728},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.42695334553718567},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.42669039964675903},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4085085690021515},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.349880188703537},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.29560670256614685},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.20235958695411682}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.7951560020446777},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.626614511013031},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.5898095369338989},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5685835480690002},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5135100483894348},{"id":"https://openalex.org/C144534570","wikidata":"https://www.wikidata.org/wiki/Q5325","display_name":"Inductor","level":3,"score":0.5083279013633728},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.42695334553718567},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.42669039964675903},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4085085690021515},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.349880188703537},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.29560670256614685},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.20235958695411682},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isicir.2016.7829726","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isicir.2016.7829726","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 International Symposium on Integrated Circuits (ISIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7699999809265137}],"awards":[],"funders":[{"id":"https://openalex.org/F4320323443","display_name":"National Chiao Tung University","ror":"https://ror.org/00se2k293"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1544125725","https://openalex.org/W1920547335","https://openalex.org/W2010837831","https://openalex.org/W2011614845","https://openalex.org/W2057370706","https://openalex.org/W2065669641","https://openalex.org/W2077025792","https://openalex.org/W2084667235","https://openalex.org/W2100403807","https://openalex.org/W2112721246","https://openalex.org/W2146498068","https://openalex.org/W2154987478","https://openalex.org/W2524892090","https://openalex.org/W6676835093","https://openalex.org/W6681875298","https://openalex.org/W6727607902"],"related_works":["https://openalex.org/W2544244340","https://openalex.org/W2229772108","https://openalex.org/W2083085379","https://openalex.org/W2389800961","https://openalex.org/W1995389502","https://openalex.org/W2011560271","https://openalex.org/W2501578203","https://openalex.org/W2113108952","https://openalex.org/W3215142653","https://openalex.org/W1487051936"],"abstract_inverted_index":{"To":[0],"protect":[1],"the":[2,11,27,34,45],"high-speed":[3,38,51],"integrated":[4],"circuits":[5],"from":[6],"electrostatic":[7],"discharge":[8],"(ESD)":[9],"damages,":[10],"ESD":[12,29,42],"protection":[13,30],"design":[14,31],"of":[15,32],"inductor-assisted":[16],"silicon-controlled":[17],"rectifier":[18],"(LASCR)":[19],"is":[20,47],"investigated":[21],"in":[22],"this":[23],"work.":[24],"Compared":[25],"with":[26],"conventional":[28],"dual-diode,":[33],"LASCR":[35,46],"has":[36],"better":[37],"performances":[39],"and":[40],"higher":[41],"robustness.":[43],"Therefore,":[44],"very":[48],"suitable":[49],"for":[50],"applications.":[52]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}