{"id":"https://openalex.org/W2582914680","doi":"https://doi.org/10.1109/isicir.2016.7829713","title":"Effect of metal work function on the DC characteristics of an asymmetric MOSFET with Schottky-based source","display_name":"Effect of metal work function on the DC characteristics of an asymmetric MOSFET with Schottky-based source","publication_year":2016,"publication_date":"2016-12-01","ids":{"openalex":"https://openalex.org/W2582914680","doi":"https://doi.org/10.1109/isicir.2016.7829713","mag":"2582914680"},"language":"en","primary_location":{"id":"doi:10.1109/isicir.2016.7829713","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isicir.2016.7829713","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 International Symposium on Integrated Circuits (ISIC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009866670","display_name":"Arjun Ajaykumar","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Arjun Ajaykumar","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101851241","display_name":"Xing Zhou","orcid":"https://orcid.org/0000-0003-2509-6726"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Xing Zhou","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033708105","display_name":"Siau Ben Chiah","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Siau Ben Chiah","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.186,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.61683618,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/thermionic-emission","display_name":"Thermionic emission","score":0.8704085946083069},{"id":"https://openalex.org/keywords/work-function","display_name":"Work function","score":0.7901483178138733},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6976895928382874},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.6517419815063477},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.6104543805122375},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.5170465111732483},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5025641918182373},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.45504677295684814},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3859594464302063},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3425178527832031},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3367432951927185},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.2827167212963104},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1658320128917694},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11971992254257202},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.11065590381622314},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.06144380569458008}],"concepts":[{"id":"https://openalex.org/C143979616","wikidata":"https://www.wikidata.org/wiki/Q215259","display_name":"Thermionic emission","level":3,"score":0.8704085946083069},{"id":"https://openalex.org/C115235246","wikidata":"https://www.wikidata.org/wiki/Q783800","display_name":"Work function","level":3,"score":0.7901483178138733},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6976895928382874},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.6517419815063477},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.6104543805122375},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.5170465111732483},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5025641918182373},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45504677295684814},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3859594464302063},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3425178527832031},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3367432951927185},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.2827167212963104},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1658320128917694},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11971992254257202},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.11065590381622314},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06144380569458008},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.0},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isicir.2016.7829713","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isicir.2016.7829713","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 International Symposium on Integrated Circuits (ISIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2037209917","https://openalex.org/W2062136275","https://openalex.org/W2157679815","https://openalex.org/W2164032777","https://openalex.org/W2288275062","https://openalex.org/W2474975529"],"related_works":["https://openalex.org/W4289869354","https://openalex.org/W2804339133","https://openalex.org/W2039664833","https://openalex.org/W2521189181","https://openalex.org/W2963973944","https://openalex.org/W4387908819","https://openalex.org/W4387994706","https://openalex.org/W1678663235","https://openalex.org/W2046755821","https://openalex.org/W2314964419"],"abstract_inverted_index":{"Schottky":[0],"Source":[1],"(S)":[2],"and":[3,20,26,52,59],"Drain":[4],"(D)":[5],"based":[6,19],"MOSFETs":[7,88],"have":[8],"been":[9],"extensively":[10],"studied":[11],"in":[12,63],"the":[13,35,48,56,74,100],"past.":[14],"These":[15],"devices":[16],"are":[17],"tunneling":[18,80],"show":[21,69,90],"improved":[22,91],"short":[23],"channel":[24],"effects":[25],"reduced":[27,96],"contact":[28],"resistance.":[29],"In":[30],"this":[31],"paper":[32],"we":[33],"study":[34],"effect":[36],"of":[37],"S":[38],"metal":[39],"work":[40],"function":[41],"(\u03a6":[42],"<sub":[43,76],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[44,77],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">M</sub>":[45,78],")":[46],"on":[47,55],"carrier":[49],"injection":[50,83,98],"process":[51],"its":[53],"impact":[54],"subthreshold":[57],"swing":[58],"ON-OFF":[60],"current":[61,93],"ratio":[62],"an":[64],"asymmetric":[65],"n-type":[66],"MOSFET.":[67],"We":[68],"that":[70],"by":[71],"carefully":[72],"tuning":[73],"\u03a6":[75],",":[79],"to":[81,95],"thermionic":[82],"transition":[84],"is":[85],"possible.":[86],"Asymmetric":[87],"also":[89],"OFF":[92],"due":[94],"hole":[97],"from":[99],"drain":[101],"contact.":[102]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}