{"id":"https://openalex.org/W2580436849","doi":"https://doi.org/10.1109/isicir.2016.7829708","title":"Concurrent device/circuit aging for general reliability simulations","display_name":"Concurrent device/circuit aging for general reliability simulations","publication_year":2016,"publication_date":"2016-12-01","ids":{"openalex":"https://openalex.org/W2580436849","doi":"https://doi.org/10.1109/isicir.2016.7829708","mag":"2580436849"},"language":"en","primary_location":{"id":"doi:10.1109/isicir.2016.7829708","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isicir.2016.7829708","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 International Symposium on Integrated Circuits (ISIC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110244930","display_name":"Haoyuan Jiang","orcid":null},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Haoyuan Jiang","raw_affiliation_strings":["Dept. of ECE, Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of ECE, Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102164917","display_name":"Chenyue Ma","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chenyue Ma","raw_affiliation_strings":["SECE, Shenzhen Graduate School, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SECE, Shenzhen Graduate School, Shenzhen, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100781975","display_name":"Lining Zhang","orcid":"https://orcid.org/0000-0003-1472-7852"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Lining Zhang","raw_affiliation_strings":["Dept. of ECE, Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of ECE, Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5056796025","display_name":"Mansun Chan","orcid":"https://orcid.org/0000-0002-5104-7410"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Mansun Chan","raw_affiliation_strings":["Dept. of ECE, Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of ECE, Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4036,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.57205328,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"6b","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.8606516718864441},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.8442391753196716},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.6730304956436157},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.5999515056610107},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5952862501144409},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5437198877334595},{"id":"https://openalex.org/keywords/circuit-design","display_name":"Circuit design","score":0.5348668694496155},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.4889599084854126},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.4214392900466919},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.41068774461746216},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39406275749206543},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.30216100811958313},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.17863672971725464},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17588797211647034},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.1420382559299469},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.08542203903198242}],"concepts":[{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.8606516718864441},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.8442391753196716},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.6730304956436157},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.5999515056610107},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5952862501144409},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5437198877334595},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.5348668694496155},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.4889599084854126},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.4214392900466919},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.41068774461746216},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39406275749206543},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.30216100811958313},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.17863672971725464},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17588797211647034},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.1420382559299469},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.08542203903198242},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/isicir.2016.7829708","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isicir.2016.7829708","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 International Symposium on Integrated Circuits (ISIC)","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-83736","is_oa":false,"landing_page_url":"http://repository.hkust.edu.hk/ir/Record/1783.1-83736","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7599999904632568,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W2036537371"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W2942040471","https://openalex.org/W2028220610","https://openalex.org/W2573726612","https://openalex.org/W2088008649","https://openalex.org/W2166033074","https://openalex.org/W2036808971","https://openalex.org/W2571059022","https://openalex.org/W1968460025","https://openalex.org/W1970920853"],"abstract_inverted_index":{"Continuous":[0],"shrinking":[1],"of":[2],"design":[3,37,59],"window":[4],"for":[5,24,125],"circuit":[6,32,103,133],"reliability":[7,26,33,53,84,114,129],"requires":[8],"more":[9],"accurate":[10],"aging":[11,22,69,104],"simulation":[12,70],"tools.":[13],"In":[14],"this":[15],"paper":[16],"we":[17],"describe":[18],"one":[19],"concurrent":[20,100],"device/circuit":[21],"method":[23,93],"general":[25,123],"simulations":[27],"with":[28,58],"improved":[29],"accuracy.":[30],"Several":[31],"mechanisms":[34,130],"under":[35],"modern":[36],"concepts":[38],"are":[39],"described":[40],"first,":[41],"including":[42],"the":[43,49,55,89,99,112,117,132],"negative":[44],"bias":[45],"temperature":[46],"instabilities":[47],"(NBTI),":[48],"self-heating":[50],"effect":[51],"on":[52],"and":[54,65,102,120],"electromigration":[56],"(EM)":[57],"schemes":[60],"such":[61],"as":[62],"dynamic":[63,90],"voltage":[64],"frequency":[66],"scaling.":[67],"The":[68],"methodology":[71],"currently":[72],"being":[73],"used":[74],"is":[75,78,95,107],"reviewed,":[76],"which":[77,97],"inefficient":[79],"in":[80,116,131],"handling":[81],"these":[82],"emerging":[83],"problems.":[85],"One":[86],"possible":[87],"solution,":[88],"time":[91],"evolution":[92],"(DTEM),":[94],"introduced":[96],"supports":[98],"device":[101],"simulations.":[105],"It":[106],"shown":[108],"that":[109],"DTEM":[110],"reproduces":[111],"complex":[113],"behaviors":[115],"transistor":[118],"level":[119],"provides":[121],"a":[122],"framework":[124],"isolated":[126],"or":[127],"coupled":[128],"level.":[134]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}