{"id":"https://openalex.org/W2550723781","doi":"https://doi.org/10.1109/isicir.2014.7029512","title":"High-speed and low-leakage FinFET SRAM cell with enhanced read and write voltage margins","display_name":"High-speed and low-leakage FinFET SRAM cell with enhanced read and write voltage margins","publication_year":2014,"publication_date":"2014-12-01","ids":{"openalex":"https://openalex.org/W2550723781","doi":"https://doi.org/10.1109/isicir.2014.7029512","mag":"2550723781"},"language":"en","primary_location":{"id":"doi:10.1109/isicir.2014.7029512","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isicir.2014.7029512","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 International Symposium on Integrated Circuits (ISIC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002759297","display_name":"Shairfe Muhammad Salahuddin","orcid":"https://orcid.org/0000-0002-6483-8430"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":true,"raw_author_name":"Shairfe Muhammad Salahuddin","raw_affiliation_strings":["Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong"],"affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042147600","display_name":"Volkan Kursun","orcid":"https://orcid.org/0000-0002-8050-1774"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Volkan Kursun","raw_affiliation_strings":["Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong"],"affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5002759297"],"corresponding_institution_ids":["https://openalex.org/I200769079"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.27382487,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"312","last_page":"315"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9022601842880249},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.7244045734405518},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6412367820739746},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5905716419219971},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.5803940892219543},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.5761705636978149},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4994633197784424},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.49775174260139465},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.47651588916778564},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.4637954831123352},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4608364701271057},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.43529146909713745},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.4282990097999573},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3468186557292938},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3112263083457947},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20680704712867737},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.19412466883659363},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16917183995246887}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9022601842880249},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.7244045734405518},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6412367820739746},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5905716419219971},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.5803940892219543},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.5761705636978149},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4994633197784424},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.49775174260139465},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.47651588916778564},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.4637954831123352},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4608364701271057},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.43529146909713745},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.4282990097999573},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3468186557292938},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3112263083457947},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20680704712867737},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.19412466883659363},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16917183995246887},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/isicir.2014.7029512","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isicir.2014.7029512","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 International Symposium on Integrated Circuits (ISIC)","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-68015","is_oa":false,"landing_page_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000380456800059","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8899999856948853,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1992558980","https://openalex.org/W2071888617","https://openalex.org/W2083666347","https://openalex.org/W2100357475","https://openalex.org/W2117082520","https://openalex.org/W2143807959","https://openalex.org/W2158670760","https://openalex.org/W2161555441","https://openalex.org/W2162517322","https://openalex.org/W2162583644"],"related_works":["https://openalex.org/W2297319780","https://openalex.org/W2178217057","https://openalex.org/W1909296377","https://openalex.org/W1972800815","https://openalex.org/W2089002058","https://openalex.org/W2159770326","https://openalex.org/W2550723781","https://openalex.org/W1505038800","https://openalex.org/W1504951709","https://openalex.org/W1980741586"],"abstract_inverted_index":{"A":[0],"new":[1,40],"single-ended":[2],"read":[3,44,47],"asymmetrical":[4],"SRAM":[5,41,89],"cell":[6],"with":[7],"underlap":[8],"engineered":[9],"symmetrical":[10],"FinFETs":[11],"is":[12,70],"proposed":[13],"in":[14,91],"this":[15],"paper":[16],"for":[17],"achieving":[18],"stronger":[19],"data":[20,45],"stability,":[21,46],"enhanced":[22,56],"write":[23,49,53],"ability,":[24],"and":[25,52,63],"suppressed":[26],"leakage":[27,67],"power":[28,68],"consumption":[29,69],"as":[30,82],"compared":[31,83],"to":[32,59,74,84],"previously":[33,86],"published":[34,87],"six-FinFET":[35,88],"memory":[36,79],"circuits.":[37],"With":[38],"the":[39,43,66,78,85],"cell,":[42],"speed,":[48],"voltage":[50],"margin,":[51],"speed":[54],"are":[55],"by":[57,72],"up":[58,73],"2.7\u00d7,":[60],"57.6%,":[61],"25.5%,":[62],"20.1%":[64],"while":[65],"reduced":[71],"69.8%":[75],"without":[76],"degrading":[77],"integration":[80],"density":[81],"cells":[90],"a":[92],"15nm":[93],"FinFET":[94],"technology.":[95]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}