{"id":"https://openalex.org/W2790329865","doi":"https://doi.org/10.1109/ised.2017.8303905","title":"Three-dimensional emerging nonvolatile memory for the high-density and neuromorphic applications","display_name":"Three-dimensional emerging nonvolatile memory for the high-density and neuromorphic applications","publication_year":2017,"publication_date":"2017-12-01","ids":{"openalex":"https://openalex.org/W2790329865","doi":"https://doi.org/10.1109/ised.2017.8303905","mag":"2790329865"},"language":"en","primary_location":{"id":"doi:10.1109/ised.2017.8303905","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ised.2017.8303905","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 7th International Symposium on Embedded Computing and System Design (ISED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5018423541","display_name":"Writam Banerjee","orcid":"https://orcid.org/0000-0001-5027-8172"},"institutions":[{"id":"https://openalex.org/I115592961","display_name":"Jiangsu University","ror":"https://ror.org/03jc41j30","country_code":"CN","type":"education","lineage":["https://openalex.org/I115592961"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Writam Banerjee","raw_affiliation_strings":["School of Electrical and Information Engineering, Jiangsu University, Zhenjiang, China"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Information Engineering, Jiangsu University, Zhenjiang, China","institution_ids":["https://openalex.org/I115592961"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100347764","display_name":"Ming Liu","orcid":"https://orcid.org/0000-0002-0937-7547"},"institutions":[{"id":"https://openalex.org/I115592961","display_name":"Jiangsu University","ror":"https://ror.org/03jc41j30","country_code":"CN","type":"education","lineage":["https://openalex.org/I115592961"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ming Liu","raw_affiliation_strings":["School of Electrical and Information Engineering, Jiangsu University, Zhenjiang, China"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Information Engineering, Jiangsu University, Zhenjiang, China","institution_ids":["https://openalex.org/I115592961"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5018423541"],"corresponding_institution_ids":["https://openalex.org/I115592961"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.19932739,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9959999918937683,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.8243588209152222},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.7607886791229248},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4503185451030731},{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.4491432309150696},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.4280097186565399},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.29537975788116455},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1910933256149292},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.12342140078544617},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1214788556098938},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.10476616024971008}],"concepts":[{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.8243588209152222},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.7607886791229248},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4503185451030731},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.4491432309150696},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.4280097186565399},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.29537975788116455},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1910933256149292},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.12342140078544617},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1214788556098938},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.10476616024971008},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ised.2017.8303905","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ised.2017.8303905","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 7th International Symposium on Embedded Computing and System Design (ISED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W1603535715","https://openalex.org/W1736066795","https://openalex.org/W1926340497","https://openalex.org/W1967588442","https://openalex.org/W1977588918","https://openalex.org/W1993932725","https://openalex.org/W1998177673","https://openalex.org/W2000979663","https://openalex.org/W2009966943","https://openalex.org/W2015284628","https://openalex.org/W2016922062","https://openalex.org/W2016923128","https://openalex.org/W2018774711","https://openalex.org/W2022357437","https://openalex.org/W2024954258","https://openalex.org/W2034876082","https://openalex.org/W2038331561","https://openalex.org/W2050771310","https://openalex.org/W2060150004","https://openalex.org/W2071947829","https://openalex.org/W2084597789","https://openalex.org/W2118803816","https://openalex.org/W2120557145","https://openalex.org/W2134089805","https://openalex.org/W2158722872","https://openalex.org/W2162341456","https://openalex.org/W2220985301","https://openalex.org/W2292840346","https://openalex.org/W2334364695","https://openalex.org/W2343196009","https://openalex.org/W2420786491","https://openalex.org/W2536340683","https://openalex.org/W2590562834","https://openalex.org/W2620030804","https://openalex.org/W2751072639","https://openalex.org/W2766584614","https://openalex.org/W4248400224"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W4386475142","https://openalex.org/W2793181810","https://openalex.org/W1967489488","https://openalex.org/W2806638311","https://openalex.org/W2891417865","https://openalex.org/W2893723691","https://openalex.org/W2517651798","https://openalex.org/W2785635065","https://openalex.org/W2199653281"],"abstract_inverted_index":{"Resistive":[0],"random":[1],"access":[2],"memory":[3,13,21],"(RRAM)":[4],"is":[5],"one":[6],"of":[7,32,72,98,106],"the":[8,16,30,40,66,73,84,93,99,104,108,125],"most":[9],"promising":[10],"emerging":[11,35],"nonvolatile":[12],"candidates":[14],"for":[15,24,124],"future":[17],"application":[18],"as":[19],"high-density":[20,126],"and":[22,127],"also":[23],"neuromorphic":[25,128],"computing.":[26],"Here,":[27],"we":[28],"show":[29],"fabrication":[31],"three-dimensional":[33],"(3D)":[34],"RRAM":[36,122],"devices":[37,56,71,85,123],"based":[38,91],"on":[39,92],"TiO":[41,109],"<sub":[42,46,50,110,114,118],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[43,47,51,111,115,119],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">x</sub>":[44,112],"/Al":[45,113],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[48,116],"O":[49,117],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[52,120],"bilayer":[53,121],"design.":[54],"The":[55],"are":[57,76,86,102],"showing":[58,87,103],"good":[59],"resistive":[60],"switching":[61,81],"performances":[62],"after":[63],"going":[64],"through":[65],"initial":[67],"forming":[68],"process.":[69],"All":[70,97],"3D":[74],"stack":[75],"able":[77],"to":[78],"execute":[79],"symmetrical":[80],"behavior.":[82],"Moreover,":[83],"continuous":[88],"synaptic":[89],"characteristics":[90],"pulse":[94],"dependent":[95],"measurements.":[96],"observed":[100],"phenomena":[101],"possibility":[105],"using":[107],"applications.":[129]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}