{"id":"https://openalex.org/W4381328993","doi":"https://doi.org/10.1109/isdcs58735.2023.10153523","title":"Simulation-Based Switching Performance of Self-Heating Effect on SiC-based Power-Electronic Circuits","display_name":"Simulation-Based Switching Performance of Self-Heating Effect on SiC-based Power-Electronic Circuits","publication_year":2023,"publication_date":"2023-05-29","ids":{"openalex":"https://openalex.org/W4381328993","doi":"https://doi.org/10.1109/isdcs58735.2023.10153523"},"language":"en","primary_location":{"id":"doi:10.1109/isdcs58735.2023.10153523","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/isdcs58735.2023.10153523","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Symposium on Devices, Circuits and Systems (ISDCS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101564772","display_name":"Subhajit Das","orcid":"https://orcid.org/0000-0002-0251-5556"},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Subhajit Das","raw_affiliation_strings":["HiSIM Research Center Hiroshima University,Higashi-Hiroshima,Japan","HiSIM Research Center Hiroshima University, Higashi-Hiroshima, Japan"],"affiliations":[{"raw_affiliation_string":"HiSIM Research Center Hiroshima University,Higashi-Hiroshima,Japan","institution_ids":["https://openalex.org/I113306721"]},{"raw_affiliation_string":"HiSIM Research Center Hiroshima University, Higashi-Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5091067358","display_name":"T. Iizuka","orcid":"https://orcid.org/0000-0003-0680-6737"},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takahiro Iizuka","raw_affiliation_strings":["HiSIM Research Center Hiroshima University,Higashi-Hiroshima,Japan","HiSIM Research Center Hiroshima University, Higashi-Hiroshima, Japan"],"affiliations":[{"raw_affiliation_string":"HiSIM Research Center Hiroshima University,Higashi-Hiroshima,Japan","institution_ids":["https://openalex.org/I113306721"]},{"raw_affiliation_string":"HiSIM Research Center Hiroshima University, Higashi-Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101564772"],"corresponding_institution_ids":["https://openalex.org/I113306721"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.05433205,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"01","last_page":"03"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6423860192298889},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.6393022537231445},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5681612491607666},{"id":"https://openalex.org/keywords/thermal-conduction","display_name":"Thermal conduction","score":0.5499394536018372},{"id":"https://openalex.org/keywords/switching-time","display_name":"Switching time","score":0.5373854041099548},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4961636960506439},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4773971140384674},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.4701271951198578},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4477984309196472},{"id":"https://openalex.org/keywords/circuit-switching","display_name":"Circuit switching","score":0.4197283387184143},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.41707485914230347},{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.4153107702732086},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3918778896331787},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.31544387340545654},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.25416895747184753},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1881641149520874},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13479793071746826},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08302563428878784}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6423860192298889},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.6393022537231445},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5681612491607666},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.5499394536018372},{"id":"https://openalex.org/C199310435","wikidata":"https://www.wikidata.org/wiki/Q7659121","display_name":"Switching time","level":2,"score":0.5373854041099548},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4961636960506439},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4773971140384674},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.4701271951198578},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4477984309196472},{"id":"https://openalex.org/C74294265","wikidata":"https://www.wikidata.org/wiki/Q506273","display_name":"Circuit switching","level":2,"score":0.4197283387184143},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.41707485914230347},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.4153107702732086},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3918778896331787},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.31544387340545654},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.25416895747184753},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1881641149520874},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13479793071746826},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08302563428878784},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isdcs58735.2023.10153523","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/isdcs58735.2023.10153523","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Symposium on Devices, Circuits and Systems (ISDCS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8399999737739563,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2092332957","https://openalex.org/W2577976329","https://openalex.org/W2805576206","https://openalex.org/W2830467510","https://openalex.org/W2956388751","https://openalex.org/W3128293059","https://openalex.org/W3209812439","https://openalex.org/W4367591726"],"related_works":["https://openalex.org/W2888779372","https://openalex.org/W2055119798","https://openalex.org/W2019344041","https://openalex.org/W1536131916","https://openalex.org/W2087143878","https://openalex.org/W1979943515","https://openalex.org/W2012301653","https://openalex.org/W2057945518","https://openalex.org/W1971294334","https://openalex.org/W2037476734"],"abstract_inverted_index":{"The":[0],"high-frequency":[1],"power-switch-driven":[2],"self-heating":[3,70],"effect":[4,71],"on":[5,54,72],"the":[6,12,37,41,50,73,85],"conduction":[7,57,81],"and":[8,30,56,76],"switching":[9,55,74],"performance":[10,75],"of":[11,40,88],"4H-":[13],"Silicon":[14],"Carbide":[15],"(SiC)":[16],"DMOSFET-based":[17],"general-purpose":[18],"inverter":[19],"stack":[20],"(GPIS)":[21],"circuit":[22,31,53,92],"has":[23,64],"been":[24,65],"investigated":[25],"through":[26],"an":[27,45,68],"integrated":[28],"device":[29,89],"simulation":[32],"approach.":[33],"This":[34],"study":[35],"presents":[36],"empirical":[38],"significance":[39],"blocking":[42],"switch":[43],"with":[44,59,84],"embedded":[46],"body":[47],"diode":[48],"in":[49],"H-bridge":[51],"converter":[52],"loss":[58,82],"instantaneous":[60],"temperature":[61,90],"rise.":[62],"It":[63],"explored":[66],"that":[67],"insignificant":[69],"non-negligible":[77],"post-switching":[78],"body-diode":[79],"carried":[80],"rise":[83],"real-time":[86],"increase":[87],"during":[91],"operation.":[93]},"counts_by_year":[],"updated_date":"2025-12-24T23:09:58.560324","created_date":"2025-10-10T00:00:00"}