{"id":"https://openalex.org/W2945083445","doi":"https://doi.org/10.1109/isdcs.2019.8719093","title":"Analysis of IGBT Charging/Discharging Mechanism for Accurate Compact Modeling","display_name":"Analysis of IGBT Charging/Discharging Mechanism for Accurate Compact Modeling","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2945083445","doi":"https://doi.org/10.1109/isdcs.2019.8719093","mag":"2945083445"},"language":"en","primary_location":{"id":"doi:10.1109/isdcs.2019.8719093","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isdcs.2019.8719093","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012929404","display_name":"Yosuke Miyaoku","orcid":null},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yosuke Miyaoku","raw_affiliation_strings":["Advacned Sciences of Mattaer, Hiroshima University, Higashi, Hiroshima, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advacned Sciences of Mattaer, Hiroshima University, Higashi, Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075171408","display_name":"M. Miura\u2013Mattausch","orcid":"https://orcid.org/0000-0002-9244-9539"},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mitiko Miura-Mattausch","raw_affiliation_strings":["HiSIM Research Center, Hiroshima University, Higashi, Hiroshima, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HiSIM Research Center, Hiroshima University, Higashi, Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091816437","display_name":"A. Tone","orcid":null},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akihiro Tone","raw_affiliation_strings":["Advacned Sciences of Mattaer, Hiroshima University, Higashi, Hiroshima, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advacned Sciences of Mattaer, Hiroshima University, Higashi, Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086404781","display_name":"Hans J\u00fcrgen Mattausch","orcid":"https://orcid.org/0000-0001-5712-1020"},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hans Jurgen Mattausch","raw_affiliation_strings":["HiSIM Research Center, Hiroshima University, Higashi, Hiroshima, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HiSIM Research Center, Hiroshima University, Higashi, Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084030505","display_name":"Kai Matsuura","orcid":null},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kai Matsuura","raw_affiliation_strings":["Advacned Sciences of Mattaer, Hiroshima University, Higashi, Hiroshima, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advacned Sciences of Mattaer, Hiroshima University, Higashi, Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5056613083","display_name":"Daisaku Ikoma","orcid":null},"institutions":[{"id":"https://openalex.org/I171818078","display_name":"Nitto (Japan)","ror":"https://ror.org/01kq4az79","country_code":"JP","type":"company","lineage":["https://openalex.org/I171818078"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Daisaku Ikoma","raw_affiliation_strings":["Semiconductor Circuit R & D Division DENSO CORPORATION, Aichi, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Circuit R & D Division DENSO CORPORATION, Aichi, Japan","institution_ids":["https://openalex.org/I171818078"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.04020327,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9961000084877014,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9937999844551086,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.9058154821395874},{"id":"https://openalex.org/keywords/ambipolar-diffusion","display_name":"Ambipolar diffusion","score":0.8219461441040039},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4922086298465729},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4499729871749878},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4245196282863617},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39567428827285767},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35705268383026123},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16493767499923706},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10827580094337463},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.08015555143356323}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.9058154821395874},{"id":"https://openalex.org/C25621703","wikidata":"https://www.wikidata.org/wiki/Q2658857","display_name":"Ambipolar diffusion","level":3,"score":0.8219461441040039},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4922086298465729},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4499729871749878},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4245196282863617},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39567428827285767},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35705268383026123},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16493767499923706},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10827580094337463},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.08015555143356323},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isdcs.2019.8719093","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isdcs.2019.8719093","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1564171258","https://openalex.org/W1964266922","https://openalex.org/W2026146945","https://openalex.org/W2094961504","https://openalex.org/W2123734845"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2802925087","https://openalex.org/W2053393604","https://openalex.org/W2027446309","https://openalex.org/W2585238015","https://openalex.org/W1995418911","https://openalex.org/W1495510678","https://openalex.org/W2054259982","https://openalex.org/W1976086231","https://openalex.org/W3005033026"],"abstract_inverted_index":{"The":[0,38,75],"trench-type":[1],"IGBT":[2,24,65],"has":[3],"been":[4],"intensively":[5],"investigated":[6],"for":[7,25],"very":[8],"high-voltage":[9],"applications.":[10],"Our":[11],"purpose":[12],"in":[13,90],"this":[14,83],"study":[15],"is":[16,41,54],"to":[17,67,92],"clarify":[18],"the":[19,23,34,45,49,57,61,73,79,87,93],"switching":[20,35,94],"features":[21],"of":[22,60,64,78,86],"developing":[26],"an":[27],"accurate":[28],"compact":[29],"model,":[30],"which":[31],"can":[32],"predict":[33],"losses":[36],"accurately.":[37],"main":[39],"focus":[40],"therefore":[42],"given":[43],"on":[44],"carrier":[46,70,88],"dynamics":[47,89],"within":[48],"device":[50],"during":[51,72],"switching.":[52,74],"It":[53],"demonstrated":[55],"that":[56],"ambipolar":[58],"feature":[59],"bipolar":[62],"function":[63],"leads":[66],"a":[68],"fast":[69],"response":[71,91],"large":[76],"amount":[77],"majority-carrier":[80],"existence":[81],"realizes":[82],"rapid":[84],"reaction":[85],"condition.":[95]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}