{"id":"https://openalex.org/W4411726967","doi":"https://doi.org/10.1109/iscas56072.2025.11043420","title":"A 400V Monolithic GaN-on-SOI Half-Bridge with On-Chip Accurate Current Detection for Isolated Power Converters","display_name":"A 400V Monolithic GaN-on-SOI Half-Bridge with On-Chip Accurate Current Detection for Isolated Power Converters","publication_year":2025,"publication_date":"2025-05-25","ids":{"openalex":"https://openalex.org/W4411726967","doi":"https://doi.org/10.1109/iscas56072.2025.11043420"},"language":"en","primary_location":{"id":"doi:10.1109/iscas56072.2025.11043420","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas56072.2025.11043420","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100371948","display_name":"Yue Wang","orcid":"https://orcid.org/0000-0001-5642-1099"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Wang","raw_affiliation_strings":["Southern University of Science and Technology,School of Microelectronics,Shenzhen,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Southern University of Science and Technology,School of Microelectronics,Shenzhen,China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008964316","display_name":"Yuchuan Han","orcid":null},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuchuan Han","raw_affiliation_strings":["Southern University of Science and Technology,School of Microelectronics,Shenzhen,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Southern University of Science and Technology,School of Microelectronics,Shenzhen,China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101926512","display_name":"Xiangyu He","orcid":"https://orcid.org/0009-0006-3729-4286"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiangyu He","raw_affiliation_strings":["Southern University of Science and Technology,School of Microelectronics,Shenzhen,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Southern University of Science and Technology,School of Microelectronics,Shenzhen,China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5068529686","display_name":"Yuan Gao","orcid":"https://orcid.org/0000-0001-8565-1790"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuan Gao","raw_affiliation_strings":["Southern University of Science and Technology,School of Microelectronics,Shenzhen,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Southern University of Science and Technology,School of Microelectronics,Shenzhen,China","institution_ids":["https://openalex.org/I3045169105"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I3045169105"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/converters","display_name":"Converters","score":0.7104050517082214},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.703974723815918},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5829601287841797},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5467513799667358},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.5331194996833801},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5215054154396057},{"id":"https://openalex.org/keywords/bridge","display_name":"Bridge (graph theory)","score":0.4621620178222656},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4530780017375946},{"id":"https://openalex.org/keywords/half-bridge","display_name":"Half bridge","score":0.4223480522632599},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4208534061908722},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.34306591749191284},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.32710468769073486},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20385795831680298},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.2009204626083374},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.13687404990196228},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11450400948524475}],"concepts":[{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.7104050517082214},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.703974723815918},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5829601287841797},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5467513799667358},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5331194996833801},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5215054154396057},{"id":"https://openalex.org/C100776233","wikidata":"https://www.wikidata.org/wiki/Q2532492","display_name":"Bridge (graph theory)","level":2,"score":0.4621620178222656},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4530780017375946},{"id":"https://openalex.org/C3019968007","wikidata":"https://www.wikidata.org/wiki/Q5641793","display_name":"Half bridge","level":4,"score":0.4223480522632599},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4208534061908722},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34306591749191284},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.32710468769073486},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20385795831680298},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.2009204626083374},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.13687404990196228},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11450400948524475},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C126322002","wikidata":"https://www.wikidata.org/wiki/Q11180","display_name":"Internal medicine","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas56072.2025.11043420","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas56072.2025.11043420","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8500000238418579}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2133945013","https://openalex.org/W2809745529","https://openalex.org/W3040853678","https://openalex.org/W3054335594","https://openalex.org/W3066836902","https://openalex.org/W3085685039","https://openalex.org/W4226108014","https://openalex.org/W4376134020"],"related_works":["https://openalex.org/W2104300577","https://openalex.org/W4206445530","https://openalex.org/W2771786520","https://openalex.org/W631083485","https://openalex.org/W2034653092","https://openalex.org/W2174354966","https://openalex.org/W2810180604","https://openalex.org/W2325281603","https://openalex.org/W2944964251","https://openalex.org/W2012754971"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,12,34,39,60,98,118],"high-precision,":[4],"low-loss,":[5],"fully":[6],"on-chip":[7,30],"current":[8,31,78],"detection":[9,54,79],"scheme":[10,62],"for":[11],"monolithic":[13],"integrated":[14],"GaN":[15],"half-bridge":[16],"in":[17,91],"high-voltage":[18],"isolated":[19],"converters.":[20],"The":[21,72],"proposed":[22,83],"design":[23,84],"integrates":[24],"power":[25,58],"switches,":[26],"gate":[27],"drivers,":[28],"an":[29,64,92],"sensor":[32],"and":[33,48,56,87,101,113,116],"relative-negative":[35],"voltage":[36],"supply":[37],"using":[38],"GaN-on-SOI":[40],"process,":[41],"addressing":[42],"challenges":[43],"posed":[44],"by":[45,107],"parasitic":[46],"inductance":[47],"signal":[49],"transmission":[50],"delays.":[51],"To":[52],"enhance":[53],"accuracy":[55,80],"minimize":[57],"loss,":[59],"sense-HEMT":[61],"with":[63],"amplifier":[65],"clamping":[66],"loop":[67],"featuring":[68],"auto-zeroing":[69],"is":[70,88,104],"utilized.":[71],"simulation":[73],"results":[74],"show":[75],"that":[76],"the":[77,82],"of":[81,110],"surpasses":[85],"96%,":[86],"sucessfully":[89],"demostrated":[90],"active":[93],"clamp":[94],"flyback":[95],"converter.":[96],"Additionally,":[97],"multi-stage":[99],"self-cycling":[100],"bootstrap":[102],"driver":[103],"proposed,":[105],"characterized":[106],"driving":[108,120],"delays":[109],"ton=6.5":[111],"ns":[112],"toff=6.3":[114],"ns,":[115],"proving":[117],"rail-to-rail":[119],"voltage.":[121]},"counts_by_year":[{"year":2026,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}