{"id":"https://openalex.org/W3158573701","doi":"https://doi.org/10.1109/iscas51556.2021.9401724","title":"A 0.9-V 22.7-ppm/\u00b0C Sub-Bandgap Voltage Reference with Single BJT and Two Resistors","display_name":"A 0.9-V 22.7-ppm/\u00b0C Sub-Bandgap Voltage Reference with Single BJT and Two Resistors","publication_year":2021,"publication_date":"2021-04-27","ids":{"openalex":"https://openalex.org/W3158573701","doi":"https://doi.org/10.1109/iscas51556.2021.9401724","mag":"3158573701"},"language":"en","primary_location":{"id":"doi:10.1109/iscas51556.2021.9401724","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas51556.2021.9401724","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101846204","display_name":"Lidan Wang","orcid":"https://orcid.org/0000-0002-3660-1524"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lidan Wang","raw_affiliation_strings":["School of Microelectronics, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029241233","display_name":"Chenchang Zhan","orcid":"https://orcid.org/0000-0002-4878-4655"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chenchang Zhan","raw_affiliation_strings":["School of Microelectronics, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067466425","display_name":"Jie Lin","orcid":"https://orcid.org/0000-0002-1777-6898"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jie Lin","raw_affiliation_strings":["School of Microelectronics, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044961111","display_name":"Shuangxing Zhao","orcid":"https://orcid.org/0009-0009-0398-8898"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shuangxing Zhao","raw_affiliation_strings":["School of Microelectronics, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026794628","display_name":"Nian Zhang","orcid":"https://orcid.org/0000-0003-1916-7719"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Nian Zhang","raw_affiliation_strings":["School of Microelectronics, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I3045169105"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.9212315082550049},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.8041529655456543},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.7709140777587891},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6563904881477356},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5989627242088318},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5709857940673828},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.565455973148346},{"id":"https://openalex.org/keywords/common-emitter","display_name":"Common emitter","score":0.5564581751823425},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5371554493904114},{"id":"https://openalex.org/keywords/sensitivity","display_name":"Sensitivity (control systems)","score":0.486930251121521},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.45876970887184143},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.41874146461486816},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.3683817386627197},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2953658699989319},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.22786086797714233},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.21215057373046875},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17933985590934753},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.08124303817749023}],"concepts":[{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.9212315082550049},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.8041529655456543},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.7709140777587891},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6563904881477356},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5989627242088318},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5709857940673828},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.565455973148346},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.5564581751823425},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5371554493904114},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.486930251121521},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.45876970887184143},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.41874146461486816},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3683817386627197},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2953658699989319},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.22786086797714233},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.21215057373046875},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17933985590934753},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.08124303817749023},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas51556.2021.9401724","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas51556.2021.9401724","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8700000047683716,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2035203291","https://openalex.org/W2100518195","https://openalex.org/W2133201500","https://openalex.org/W2139801901","https://openalex.org/W2531094437","https://openalex.org/W2744687811","https://openalex.org/W2806976375","https://openalex.org/W2921971922","https://openalex.org/W2965577611","https://openalex.org/W2978954010","https://openalex.org/W2999932876"],"related_works":["https://openalex.org/W2370820504","https://openalex.org/W2133199116","https://openalex.org/W4389955510","https://openalex.org/W2347289947","https://openalex.org/W2185874911","https://openalex.org/W1485418874","https://openalex.org/W2364640622","https://openalex.org/W2390376289","https://openalex.org/W1919724461","https://openalex.org/W2372270451"],"abstract_inverted_index":{"A":[0],"CMOS":[1,82],"sub-bandgap":[2],"voltage":[3,25,48,53,61,108],"reference":[4],"(sub-BGR)":[5],"with":[6,105,127],"single":[7],"BJT":[8,56],"and":[9,32,57,84,113,136],"two":[10],"resistors":[11],"is":[12,49,62,76,88,117],"presented":[13],"in":[14,78],"this":[15],"paper.":[16],"The":[17,46,72,95],"proposed":[18,73],"sub-BGR":[19,74,101],"structure":[20],"generates":[21],"the":[22,42,58,65,85,100,114],"complementary-to-absolute-temperature":[23],"(CTAT)":[24],"not":[26],"only":[27,118],"occupying":[28],"small":[29],"chip":[30],"area":[31,87],"consuming":[33],"nA-level":[34],"current,":[35],"but":[36],"also":[37],"achieving":[38],"low":[39],"sensitivity":[40,139],"to":[41,110],"current":[43],"mirror":[44],"mismatches.":[45],"CTAT":[47],"a":[50,55,79,106,128,137],"scaled":[51],"emitter-base":[52],"of":[54,67,69,124,131,140],"proportional-to-absolute-temperature":[59],"(PTAT)":[60],"based":[63],"on":[64],"stacking":[66],"\u0394VGS":[68],"sub-threshold":[70],"MOSFETs.":[71],"circuit":[75,102],"implemented":[77],"standard":[80],"0.18\u03bcm":[81],"process,":[83],"active":[86],"0.059":[89],"mm":[90],"<sup":[91],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[92],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[93],".":[94],"measured":[96],"results":[97],"show":[98],"that":[99],"can":[103],"work":[104],"supply":[107],"down":[109],"0.9":[111],"V":[112],"power":[115],"consumption":[116],"66":[119],"nW.":[120],"An":[121],"average":[122],"TC":[123],"22.7":[125],"ppm/\u00b0C":[126],"temperature":[129],"range":[130],"-40":[132],"\u00b0C":[133,135],"~125":[134],"line":[138],"0.059%/V":[141],"are":[142],"achieved.":[143]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}