{"id":"https://openalex.org/W3157851941","doi":"https://doi.org/10.1109/iscas51556.2021.9401701","title":"A Subthreshold Voltage Reference with Coarse- Fine Voltage Trimming","display_name":"A Subthreshold Voltage Reference with Coarse- Fine Voltage Trimming","publication_year":2021,"publication_date":"2021-04-27","ids":{"openalex":"https://openalex.org/W3157851941","doi":"https://doi.org/10.1109/iscas51556.2021.9401701","mag":"3157851941"},"language":"en","primary_location":{"id":"doi:10.1109/iscas51556.2021.9401701","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas51556.2021.9401701","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000364265","display_name":"David Zagouri","orcid":"https://orcid.org/0009-0001-1970-9744"},"institutions":[{"id":"https://openalex.org/I13955877","display_name":"Bar-Ilan University","ror":"https://ror.org/03kgsv495","country_code":"IL","type":"education","lineage":["https://openalex.org/I13955877"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"David Zagouri","raw_affiliation_strings":["Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel","institution_ids":["https://openalex.org/I13955877"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038423749","display_name":"Joseph Shor","orcid":"https://orcid.org/0000-0002-9184-8642"},"institutions":[{"id":"https://openalex.org/I13955877","display_name":"Bar-Ilan University","ror":"https://ror.org/03kgsv495","country_code":"IL","type":"education","lineage":["https://openalex.org/I13955877"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Joseph Shor","raw_affiliation_strings":["Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel","institution_ids":["https://openalex.org/I13955877"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I13955877"],"apc_list":null,"apc_paid":null,"fwci":2.8998,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.90738825,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trimming","display_name":"Trimming","score":0.7461733222007751},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.730406641960144},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.49642664194107056},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.42394354939460754},{"id":"https://openalex.org/keywords/range","display_name":"Range (aeronautics)","score":0.4137882590293884},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4046843647956848},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4003303349018097},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3738399147987366},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.3500329256057739},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.20558035373687744},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19037660956382751},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.14461302757263184}],"concepts":[{"id":"https://openalex.org/C56951928","wikidata":"https://www.wikidata.org/wiki/Q3539213","display_name":"Trimming","level":2,"score":0.7461733222007751},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.730406641960144},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.49642664194107056},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.42394354939460754},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.4137882590293884},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4046843647956848},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4003303349018097},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3738399147987366},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.3500329256057739},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.20558035373687744},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19037660956382751},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.14461302757263184},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas51556.2021.9401701","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas51556.2021.9401701","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8700000047683716}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1976220517","https://openalex.org/W2097235157","https://openalex.org/W2146324717","https://openalex.org/W2293571535","https://openalex.org/W2509281929","https://openalex.org/W2567697159","https://openalex.org/W2572245080","https://openalex.org/W2791104422","https://openalex.org/W2808414731","https://openalex.org/W2903024800","https://openalex.org/W3038879384"],"related_works":["https://openalex.org/W2467235537","https://openalex.org/W4243755427","https://openalex.org/W1493074871","https://openalex.org/W2222099502","https://openalex.org/W2128287377","https://openalex.org/W1979067309","https://openalex.org/W2375590729","https://openalex.org/W2385024427","https://openalex.org/W2978797270","https://openalex.org/W2806295079"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,65,76,89,99],"self-biased":[4],"subthreshold":[5],"voltage":[6,28],"reference":[7],"with":[8,56,98],"several":[9],"types":[10],"of":[11,36,48,58,103],"trimming":[12],"options.":[13],"A":[14,26],"current":[15],"trim":[16,29],"is":[17],"used":[18],"to":[19,54,82],"achieve":[20],"similar":[21],"currents":[22],"across":[23],"process":[24,38],"corners.":[25],"coarse/fine":[27],"was":[30,62,96],"implemented,":[31],"which":[32],"utilized":[33],"different":[34,86],"Vth's":[35],"the":[37,42],"as":[39,41],"well":[40],"reverse":[43],"short-channel":[44],"effect.":[45],"The":[46,60,92],"range":[47],"voltages":[49],"obtained":[50],"vary":[51],"from":[52],"86mV":[53],"536mV":[55],"steps":[57],"16mV.":[59],"circuit":[61],"designed":[63],"in":[64],"standard":[66],"0.18":[67],"\u03bcm":[68],"CMOS":[69],"process.":[70],"Simulation":[71],"results":[72],"at":[73,85],"Vcc=3D1V":[74],"shows":[75],"temperature":[77],"coefficient":[78],"(TC)":[79],"between":[80],"40":[81],"400":[83],"ppm/oC":[84],"trims":[87],"over":[88],"120oC":[90],"range.":[91],"nominal":[93],"power":[94],"consumption":[95],"1.35nW":[97],"highly":[100],"compact":[101],"area":[102],"0.002":[104],"mm2.":[105]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}