{"id":"https://openalex.org/W3157305224","doi":"https://doi.org/10.1109/iscas51556.2021.9401449","title":"Energy-Efficient Spin-Orbit Torque MRAM Operations for Neural Network Processor","display_name":"Energy-Efficient Spin-Orbit Torque MRAM Operations for Neural Network Processor","publication_year":2021,"publication_date":"2021-04-27","ids":{"openalex":"https://openalex.org/W3157305224","doi":"https://doi.org/10.1109/iscas51556.2021.9401449","mag":"3157305224"},"language":"en","primary_location":{"id":"doi:10.1109/iscas51556.2021.9401449","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas51556.2021.9401449","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5038647640","display_name":"Liang Chang","orcid":"https://orcid.org/0000-0002-6685-5576"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Liang Chang","raw_affiliation_strings":["University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101705740","display_name":"Zixuan Zhu","orcid":"https://orcid.org/0009-0000-2925-7975"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zixuan Zhu","raw_affiliation_strings":["University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032923032","display_name":"Zhen Zhu","orcid":"https://orcid.org/0000-0002-8065-1967"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhen Zhu","raw_affiliation_strings":["University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020806354","display_name":"Siqi Yang","orcid":"https://orcid.org/0000-0002-4990-0195"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Siqi Yang","raw_affiliation_strings":["University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081818993","display_name":"Weihang Li","orcid":"https://orcid.org/0000-0001-9197-4262"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weihang Li","raw_affiliation_strings":["University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101440489","display_name":"Jun Zhou","orcid":"https://orcid.org/0000-0003-2098-9621"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun Zhou","raw_affiliation_strings":["University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5038647640"],"corresponding_institution_ids":["https://openalex.org/I150229711"],"apc_list":null,"apc_paid":null,"fwci":0.1003,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.4034224,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10378","display_name":"Advanced MRI Techniques and Applications","score":0.9948999881744385,"subfield":{"id":"https://openalex.org/subfields/2741","display_name":"Radiology, Nuclear Medicine and Imaging"},"field":{"id":"https://openalex.org/fields/27","display_name":"Medicine"},"domain":{"id":"https://openalex.org/domains/4","display_name":"Health Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8066167831420898},{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.7405356764793396},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.7056787014007568},{"id":"https://openalex.org/keywords/transpose","display_name":"Transpose","score":0.6150555610656738},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.47898316383361816},{"id":"https://openalex.org/keywords/efficient-energy-use","display_name":"Efficient energy use","score":0.4787118434906006},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.46213167905807495},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.4617678225040436},{"id":"https://openalex.org/keywords/energy-consumption","display_name":"Energy consumption","score":0.4593416154384613},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.45604968070983887},{"id":"https://openalex.org/keywords/universal-memory","display_name":"Universal memory","score":0.4366358816623688},{"id":"https://openalex.org/keywords/memory-management","display_name":"Memory management","score":0.4222142696380615},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.37295451760292053},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.3600918650627136},{"id":"https://openalex.org/keywords/interleaved-memory","display_name":"Interleaved memory","score":0.2732309401035309},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.23442837595939636},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1981726586818695},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17950892448425293}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8066167831420898},{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.7405356764793396},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.7056787014007568},{"id":"https://openalex.org/C200106649","wikidata":"https://www.wikidata.org/wiki/Q223683","display_name":"Transpose","level":3,"score":0.6150555610656738},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.47898316383361816},{"id":"https://openalex.org/C2742236","wikidata":"https://www.wikidata.org/wiki/Q924713","display_name":"Efficient energy use","level":2,"score":0.4787118434906006},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.46213167905807495},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.4617678225040436},{"id":"https://openalex.org/C2780165032","wikidata":"https://www.wikidata.org/wiki/Q16869822","display_name":"Energy consumption","level":2,"score":0.4593416154384613},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.45604968070983887},{"id":"https://openalex.org/C195053848","wikidata":"https://www.wikidata.org/wiki/Q7894141","display_name":"Universal memory","level":5,"score":0.4366358816623688},{"id":"https://openalex.org/C176649486","wikidata":"https://www.wikidata.org/wiki/Q2308807","display_name":"Memory management","level":3,"score":0.4222142696380615},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.37295451760292053},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.3600918650627136},{"id":"https://openalex.org/C63511323","wikidata":"https://www.wikidata.org/wiki/Q908936","display_name":"Interleaved memory","level":4,"score":0.2732309401035309},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.23442837595939636},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1981726586818695},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17950892448425293},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C158693339","wikidata":"https://www.wikidata.org/wiki/Q190524","display_name":"Eigenvalues and eigenvectors","level":2,"score":0.0},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas51556.2021.9401449","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas51556.2021.9401449","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8999999761581421,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W2291961022","https://openalex.org/W2772082621","https://openalex.org/W2790511620","https://openalex.org/W2792893539","https://openalex.org/W2801623415","https://openalex.org/W2894811292","https://openalex.org/W2922086978","https://openalex.org/W2922487710","https://openalex.org/W2944431751","https://openalex.org/W2945146780","https://openalex.org/W2946585648","https://openalex.org/W2963602484","https://openalex.org/W2964089300","https://openalex.org/W2968650054","https://openalex.org/W3008359683","https://openalex.org/W3010932008","https://openalex.org/W3016014942","https://openalex.org/W3016048022","https://openalex.org/W3016245653","https://openalex.org/W3020539635","https://openalex.org/W3092083602","https://openalex.org/W3092348244","https://openalex.org/W3135060602","https://openalex.org/W4232921285","https://openalex.org/W6783851890"],"related_works":["https://openalex.org/W4235980920","https://openalex.org/W2064720608","https://openalex.org/W2765485815","https://openalex.org/W3212958336","https://openalex.org/W3147114239","https://openalex.org/W2903040985","https://openalex.org/W2010216838","https://openalex.org/W3136027979","https://openalex.org/W4240270680","https://openalex.org/W871606772"],"abstract_inverted_index":{"Emerging":[0],"energy-efficient":[1,157],"neural":[2,12,123,158],"network":[3,13,124,159],"processor":[4,125],"is":[5,27],"a":[6,82],"promising":[7],"hardware":[8],"design":[9,131],"to":[10,29,46,85,102,128],"accelerate":[11],"algorithms":[14],"with":[15,126,145],"high":[16,154],"performance":[17,155],"and":[18,49,61,68,139,156],"low":[19,47],"power":[20,71],"consumption.":[21,72],"Typically,":[22],"static":[23],"random-access":[24,78],"memory":[25,79,121],"(SRAM)":[26],"employed":[28],"develop":[30,118],"large":[31,50],"buffers":[32],"using":[33],"in":[34],"the":[35,66,70,87,99,119,130,134],"processor.":[36],"The":[37],"bit":[38],"cell":[39],"of":[40,122],"SRAM":[41,88],"contains":[42],"six":[43],"transistors,":[44],"leading":[45],"density":[48,67],"leakage":[51],"current.":[52],"In":[53,114],"particular,":[54],"several":[55],"AI":[56],"processors":[57],"need":[58],"multiple":[59],"port":[60],"transfer-based":[62],"SRAMs,":[63],"which":[64],"decrease":[65],"increase":[69],"Recently,":[73],"emerging":[74],"spin-orbit":[75],"torque":[76],"magnetic":[77],"(SOT-MRAM)":[80],"becomes":[81],"possible":[83],"solution":[84],"replace":[86],"as":[89,107],"working":[90,120],"memory.":[91],"However,":[92],"more":[93],"operations":[94,147],"should":[95],"be":[96],"supported":[97],"by":[98,149],"SOT-":[100],"MRAM":[101],"provide":[103],"sufficient":[104],"functions,":[105],"such":[106],"multiple-port":[108,137],"memory,":[109,111,138],"transpose":[110,135],"data-streaming":[112,140],"operations.":[113],"this":[115],"paper,":[116],"we":[117,151],"SOT-MRAM":[127],"build":[129,153],"library":[132],"including":[133],"operations,":[136],"based":[141],"buffer":[142],"arrays.":[143],"Equiped":[144],"those":[146],"provided":[148],"SOT-MRAM,":[150],"can":[152],"processors.":[160]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}