{"id":"https://openalex.org/W3159859185","doi":"https://doi.org/10.1109/iscas51556.2021.9401296","title":"A RRAM-Based Associative Memory Cell","display_name":"A RRAM-Based Associative Memory Cell","publication_year":2021,"publication_date":"2021-04-27","ids":{"openalex":"https://openalex.org/W3159859185","doi":"https://doi.org/10.1109/iscas51556.2021.9401296","mag":"3159859185"},"language":"en","primary_location":{"id":"doi:10.1109/iscas51556.2021.9401296","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas51556.2021.9401296","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5007389040","display_name":"Yihan Pan","orcid":"https://orcid.org/0000-0002-2666-5540"},"institutions":[{"id":"https://openalex.org/I43439940","display_name":"University of Southampton","ror":"https://ror.org/01ryk1543","country_code":"GB","type":"education","lineage":["https://openalex.org/I43439940"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"Yihan Pan","raw_affiliation_strings":["Centre for Electronics Frontiers, Zepler Institute for Photonics and Nanoelectronics, University of Southampton, UK"],"affiliations":[{"raw_affiliation_string":"Centre for Electronics Frontiers, Zepler Institute for Photonics and Nanoelectronics, University of Southampton, UK","institution_ids":["https://openalex.org/I43439940"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085908393","display_name":"Patrick Foster","orcid":"https://orcid.org/0000-0002-4662-1078"},"institutions":[{"id":"https://openalex.org/I43439940","display_name":"University of Southampton","ror":"https://ror.org/01ryk1543","country_code":"GB","type":"education","lineage":["https://openalex.org/I43439940"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Patrick Foster","raw_affiliation_strings":["Centre for Electronics Frontiers, Zepler Institute for Photonics and Nanoelectronics, University of Southampton, UK"],"affiliations":[{"raw_affiliation_string":"Centre for Electronics Frontiers, Zepler Institute for Photonics and Nanoelectronics, University of Southampton, UK","institution_ids":["https://openalex.org/I43439940"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017301291","display_name":"Alexander Serb","orcid":"https://orcid.org/0000-0002-8034-2398"},"institutions":[{"id":"https://openalex.org/I43439940","display_name":"University of Southampton","ror":"https://ror.org/01ryk1543","country_code":"GB","type":"education","lineage":["https://openalex.org/I43439940"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Alex Serb","raw_affiliation_strings":["Centre for Electronics Frontiers, Zepler Institute for Photonics and Nanoelectronics, University of Southampton, UK"],"affiliations":[{"raw_affiliation_string":"Centre for Electronics Frontiers, Zepler Institute for Photonics and Nanoelectronics, University of Southampton, UK","institution_ids":["https://openalex.org/I43439940"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5088089733","display_name":"Themis Prodromakis","orcid":"https://orcid.org/0000-0002-6267-6909"},"institutions":[{"id":"https://openalex.org/I43439940","display_name":"University of Southampton","ror":"https://ror.org/01ryk1543","country_code":"GB","type":"education","lineage":["https://openalex.org/I43439940"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Themis Prodromakis","raw_affiliation_strings":["Centre for Electronics Frontiers, Zepler Institute for Photonics and Nanoelectronics, University of Southampton, UK"],"affiliations":[{"raw_affiliation_string":"Centre for Electronics Frontiers, Zepler Institute for Photonics and Nanoelectronics, University of Southampton, UK","institution_ids":["https://openalex.org/I43439940"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5007389040"],"corresponding_institution_ids":["https://openalex.org/I43439940"],"apc_list":null,"apc_paid":null,"fwci":0.4011,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.59345149,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9958999752998352,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/xnor-gate","display_name":"XNOR gate","score":0.7970230579376221},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7466188073158264},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.6679350137710571},{"id":"https://openalex.org/keywords/content-addressable-memory","display_name":"Content-addressable memory","score":0.6628512144088745},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5807944536209106},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.535753607749939},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.5275048017501831},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.4866552948951721},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.4712441563606262},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4551706910133362},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.4140850901603699},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3476582169532776},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3275032043457031},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3212541341781616},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17298099398612976},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11765459179878235},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10900115966796875},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.0972161591053009},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.08780664205551147}],"concepts":[{"id":"https://openalex.org/C57684291","wikidata":"https://www.wikidata.org/wiki/Q1336142","display_name":"XNOR gate","level":4,"score":0.7970230579376221},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7466188073158264},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.6679350137710571},{"id":"https://openalex.org/C53442348","wikidata":"https://www.wikidata.org/wiki/Q745101","display_name":"Content-addressable memory","level":3,"score":0.6628512144088745},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5807944536209106},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.535753607749939},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.5275048017501831},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.4866552948951721},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.4712441563606262},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4551706910133362},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.4140850901603699},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3476582169532776},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3275032043457031},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3212541341781616},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17298099398612976},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11765459179878235},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10900115966796875},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0972161591053009},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.08780664205551147},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas51556.2021.9401296","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas51556.2021.9401296","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.9100000262260437,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G5054303892","display_name":null,"funder_award_id":"EP/V008242/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"},{"id":"https://openalex.org/G6097759542","display_name":null,"funder_award_id":"EP/R024642/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"}],"funders":[{"id":"https://openalex.org/F4320334627","display_name":"Engineering and Physical Sciences Research Council","ror":"https://ror.org/0439y7842"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1846246533","https://openalex.org/W2004823737","https://openalex.org/W2008749436","https://openalex.org/W2045197688","https://openalex.org/W2062143991","https://openalex.org/W2080564856","https://openalex.org/W2101091847","https://openalex.org/W2101875267","https://openalex.org/W2141145611","https://openalex.org/W2147355868","https://openalex.org/W2605663629","https://openalex.org/W2783539394","https://openalex.org/W2806708018","https://openalex.org/W2921653370","https://openalex.org/W2942979938","https://openalex.org/W2959627720","https://openalex.org/W2960778947","https://openalex.org/W3089518274","https://openalex.org/W3098380984","https://openalex.org/W4254251556","https://openalex.org/W6638947222"],"related_works":["https://openalex.org/W2534277296","https://openalex.org/W3115561514","https://openalex.org/W2802305152","https://openalex.org/W1639957441","https://openalex.org/W2030745981","https://openalex.org/W4256098899","https://openalex.org/W1846246533","https://openalex.org/W2546203629","https://openalex.org/W1980572493","https://openalex.org/W2907793170"],"abstract_inverted_index":{"In":[0],"general,":[1],"intelligent":[2],"systems":[3],"require":[4],"knowledge":[5],"databases":[6],"storing":[7],"memory":[8,20,31,52],"associations":[9],"for":[10,82,159],"mimicking":[11],"the":[12,15,69,84,144,153],"capabilities":[13],"of":[14,29,33,36,71,94,130,146,155,163,170,179],"human":[16],"brain.":[17],"Conventional":[18],"associative":[19,51],"cells":[21],"are":[22],"constructed":[23],"based":[24,61],"on":[25,62],"SRAM,":[26],"a":[27,64,72,78,90,160],"type":[28],"volatile":[30],"consisting":[32],"large":[34],"numbers":[35],"transistors":[37],"per":[38,139],"stored":[39],"bit.":[40],"Here,":[41],"we":[42,56,133],"present":[43],"an":[44],"energy":[45],"efficient,":[46],"robust":[47],"and":[48,125,149,168,182],"hardware":[49],"friendly-":[50],"cell":[53],"design":[54,88],"that":[55],"designate":[57],"RC-XNOR-Z.":[58],"It":[59],"is":[60,103,105,175],"creating":[63],"tuneable":[65],"RC":[66],"constant":[67],"with":[68,109,112,177],"help":[70],"modifiable":[73],"resistance":[74],"element":[75],"(RRAM),":[76],"plus":[77],"simplified":[79],"XNOR":[80],"gate":[81],"generating":[83],"output.":[85],"The":[86],"overall":[87],"has":[89],"total":[91],"component":[92],"count":[93],"6T1C1R":[95],"(6":[96],"transistors,":[97],"1":[98,100],"capacitor,":[99],"RRAM":[101,110],"device),":[102],"non-volatile,":[104],"designed":[106],"to":[107],"work":[108],"devices":[111],"very":[113],"low":[114],"ON/OFF":[115],"ratio":[116],"(\u22484),":[117],"avoids":[118],"high":[119],"current":[120],"DC":[121],"paths":[122],"during":[123],"misses":[124],"operates":[126],"under":[127],"power":[128,137,150],"supply":[129],"0.95V.":[131],"Furthermore,":[132],"show":[134],"expected":[135],"simulated":[136],"dissipation":[138,172],"miss":[140],"including":[141],"refresh":[142],"in":[143,152],"order":[145,154],"single-digit":[147],"nW/bit":[148],"dissipation/hit":[151],"10":[156],"\u03bcW,":[157],"which":[158],"clock":[161],"rate":[162],"1GHz":[164],"translates":[165],"into":[166],"aJ":[167],"100s":[169],"pJ":[171],"accordingly.":[173],"This":[174],"competitive":[176],"state":[178],"art":[180],"DRAM":[181],"SRAM.":[183]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}