{"id":"https://openalex.org/W3157575223","doi":"https://doi.org/10.1109/iscas51556.2021.9401100","title":"Harnessing Maximum Negative Capacitance Signature Voltage Window in P(VDF-TrFE) Gate Stack","display_name":"Harnessing Maximum Negative Capacitance Signature Voltage Window in P(VDF-TrFE) Gate Stack","publication_year":2021,"publication_date":"2021-04-27","ids":{"openalex":"https://openalex.org/W3157575223","doi":"https://doi.org/10.1109/iscas51556.2021.9401100","mag":"3157575223"},"language":"en","primary_location":{"id":"doi:10.1109/iscas51556.2021.9401100","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas51556.2021.9401100","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010407751","display_name":"Khoirom Johnson Singh","orcid":"https://orcid.org/0000-0002-3013-3571"},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Khoirom Johnson Singh","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031850929","display_name":"Anand Bulusu","orcid":"https://orcid.org/0000-0002-3986-3730"},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Anand Bulusu","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064560509","display_name":"Sudeb Dasgupta","orcid":"https://orcid.org/0000-0002-4044-1594"},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sudeb Dasgupta","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I154851008"],"apc_list":null,"apc_paid":null,"fwci":1.221,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.72801844,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.993399977684021,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.669114887714386},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5554018020629883},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4597475826740265},{"id":"https://openalex.org/keywords/pad\u00e9-approximant","display_name":"Pad\u00e9 approximant","score":0.4407901167869568},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.43200206756591797},{"id":"https://openalex.org/keywords/dipole","display_name":"Dipole","score":0.4103117883205414},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.4006733298301697},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3803284466266632},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.37170976400375366},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.3431774973869324},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.34166914224624634},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.33753377199172974},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.25313788652420044},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.16949889063835144},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.1680956780910492},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.1456628143787384},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10876461863517761}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.669114887714386},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5554018020629883},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4597475826740265},{"id":"https://openalex.org/C153150388","wikidata":"https://www.wikidata.org/wiki/Q2452504","display_name":"Pad\u00e9 approximant","level":2,"score":0.4407901167869568},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.43200206756591797},{"id":"https://openalex.org/C173523689","wikidata":"https://www.wikidata.org/wiki/Q215589","display_name":"Dipole","level":2,"score":0.4103117883205414},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4006733298301697},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3803284466266632},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.37170976400375366},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.3431774973869324},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.34166914224624634},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.33753377199172974},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.25313788652420044},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.16949889063835144},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.1680956780910492},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.1456628143787384},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10876461863517761},{"id":"https://openalex.org/C28826006","wikidata":"https://www.wikidata.org/wiki/Q33521","display_name":"Applied mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas51556.2021.9401100","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas51556.2021.9401100","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7699999809265137,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320309618","display_name":"Ministry of Science and Technology","ror":"https://ror.org/02b207r52"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W853383765","https://openalex.org/W1972366567","https://openalex.org/W2013468429","https://openalex.org/W2016106189","https://openalex.org/W2164286191","https://openalex.org/W2210852559","https://openalex.org/W2342750693","https://openalex.org/W2508917673","https://openalex.org/W2511422979","https://openalex.org/W2554585469","https://openalex.org/W2583616349","https://openalex.org/W2588218555","https://openalex.org/W2755647311","https://openalex.org/W2770294451","https://openalex.org/W2791110343","https://openalex.org/W2915746079","https://openalex.org/W2941128536","https://openalex.org/W3088371156","https://openalex.org/W3103938865","https://openalex.org/W3105740749","https://openalex.org/W6684020305"],"related_works":["https://openalex.org/W2392120131","https://openalex.org/W59395856","https://openalex.org/W2237487746","https://openalex.org/W2116139986","https://openalex.org/W4399578928","https://openalex.org/W2099520116","https://openalex.org/W2621837466","https://openalex.org/W2319388306","https://openalex.org/W2381270763","https://openalex.org/W2185525114"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"the":[3,35,52,58,68,77,96,104,117,133,143,160,168,174,180,218,225],"observation":[4],"of":[5,23,37,57,98,112,122,153,188,209,221],"transient":[6],"negative":[7],"capacitance":[8],"signature":[9],"(NCS)":[10],"in":[11,34,51,83,116],"an":[12,45,196],"organic":[13],"ferroelectric":[14,70],"gate":[15,163,243],"stack":[16,244],"(OFEGS)":[17],"at":[18,146,192],"minimum":[19,150,205,230],"supply":[20],"voltage":[21,55],"(Vs)":[22],"\u00b10.5":[24,147],"V":[25,148,191],"is":[26,62,100,182,201,213],"investigated":[27],"employing":[28],"a":[29,64,86,157,185,204,229,242],"well-calibrated":[30],"Ginzburg-Landau-Khalatnikov":[31],"(GLK)":[32],"model":[33],"environment":[36],"Sentaurus":[38],"technology":[39],"computer-aided":[40],"design":[41],"(STCAD).":[42],"We":[43,75],"observe":[44],"88.62":[46],"to":[47,85,167],"94.76":[48],"%":[49,215],"reduction":[50],"average":[53],"coercive":[54],"(Vc)":[56],"proposed":[59,139,226],"OFEGS,":[60],"which":[61,212],"still":[63],"significant":[65],"challenge":[66,158],"for":[67,159,245],"conventional":[69],"(FE)":[71],"lead":[72],"zirconate":[73],"titanate.":[74],"study":[76],"resistor-OFEGS":[78],"(RCofe)":[79],"series":[80],"network":[81],"behaviors":[82],"response":[84,135],"bipolar":[87],"and":[88,109,232],"unipolar":[89],"triangular":[90],"signal.":[91],"Our":[92],"findings":[93],"prove":[94],"that":[95],"presence":[97],"NCS":[99,134,144,181],"directly":[101],"correlated":[102],"with":[103,149,184,228],"FE":[105],"polarization":[106,234],"(FEP)":[107],"switching":[108,128],"not":[110],"because":[111],"any":[113],"extrinsic":[114],"defects":[115],"system.":[118],"The":[119,138],"various":[120],"impacts":[121],"Vs,":[123],"GLK":[124],"parameters,":[125],"R,":[126],"dipole":[127],"resistivity":[129],"(Rofe)":[130],"variations":[131],"on":[132],"are":[136],"investigated.":[137],"OFEGS":[140,197,227],"can":[141,172],"harness":[142],"effect":[145],"energy":[151],"dissipation":[152],"4.81":[154],"\u00d7":[155],"10-16J,":[156],"oxide":[161],"FE-based":[162],"stacks.":[164],"Calibrating":[165],"R":[166],"maximum":[169,183],"limit,":[170],"we":[171],"capture":[173],"S-shaped":[175],"ideal":[176],"Landau":[177,199],"path":[178],"where":[179],"small":[186],"deviation":[187],"about":[189],"\u00b10.006":[190],"zero":[193],"FEP.":[194],"Finally,":[195],"based":[198],"transistor":[200,249],"implemented,":[202],"providing":[203],"subthreshold":[206],"swing":[207],"(SSmin)":[208],"38.21":[210],"mV/decade,":[211],"36.32":[214],"lesser":[216],"than":[217],"fundamental":[219],"SSminlimitation":[220],"60":[222],"mV/decade.":[223],"Therefore,":[224],"Vs":[231],"remanent":[233],"(Pr=3D":[235],"1.244":[236],"\u03bcC/cm2)":[237],"could":[238],"be":[239],"used":[240],"as":[241],"designing":[246],"sub-60":[247],"mV/decade":[248],"technology.":[250]},"counts_by_year":[{"year":2022,"cited_by_count":3}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}