{"id":"https://openalex.org/W4312451212","doi":"https://doi.org/10.1109/iscas48785.2022.9937438","title":"An 8T/Cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy","display_name":"An 8T/Cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy","publication_year":2022,"publication_date":"2022-05-28","ids":{"openalex":"https://openalex.org/W4312451212","doi":"https://doi.org/10.1109/iscas48785.2022.9937438"},"language":"en","primary_location":{"id":"doi:10.1109/iscas48785.2022.9937438","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas48785.2022.9937438","pdf_url":null,"source":{"id":"https://openalex.org/S4363604393","display_name":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100358534","display_name":"Jianfeng Wang","orcid":"https://orcid.org/0009-0007-7091-5563"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Jianfeng Wang","raw_affiliation_strings":["Tsinghua University,BNRist/ICFC, EE","BNRist/ICFC, EE, Tsinghua University"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,BNRist/ICFC, EE","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"BNRist/ICFC, EE, Tsinghua University","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025239000","display_name":"Nuo Xiu","orcid":null},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Nuo Xiu","raw_affiliation_strings":["Tsinghua University,BNRist/ICFC, EE","BNRist/ICFC, EE, Tsinghua University"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,BNRist/ICFC, EE","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"BNRist/ICFC, EE, Tsinghua University","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081429680","display_name":"Juejian Wu","orcid":"https://orcid.org/0000-0001-9473-1995"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Juejian Wu","raw_affiliation_strings":["Tsinghua University,BNRist/ICFC, EE","BNRist/ICFC, EE, Tsinghua University"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,BNRist/ICFC, EE","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"BNRist/ICFC, EE, Tsinghua University","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100333353","display_name":"Yiming Chen","orcid":"https://orcid.org/0000-0002-1408-5194"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yiming Chen","raw_affiliation_strings":["Tsinghua University,BNRist/ICFC, EE","BNRist/ICFC, EE, Tsinghua University"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,BNRist/ICFC, EE","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"BNRist/ICFC, EE, Tsinghua University","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100644209","display_name":"Yanan Sun","orcid":"https://orcid.org/0000-0003-3678-6255"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yanan Sun","raw_affiliation_strings":["Shanghai Jiaotong University"],"affiliations":[{"raw_affiliation_string":"Shanghai Jiaotong University","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103867707","display_name":"Huazhong Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huazhong Yang","raw_affiliation_strings":["Tsinghua University,BNRist/ICFC, EE","BNRist/ICFC, EE, Tsinghua University"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,BNRist/ICFC, EE","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"BNRist/ICFC, EE, Tsinghua University","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101919131","display_name":"Vijaykrishnan Narayanan","orcid":"https://orcid.org/0000-0001-6266-6068"},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vijaykrishnan Narayanan","raw_affiliation_strings":["Penn State University"],"affiliations":[{"raw_affiliation_string":"Penn State University","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021884109","display_name":"Sumitha George","orcid":"https://orcid.org/0000-0002-5924-8807"},"institutions":[{"id":"https://openalex.org/I125467818","display_name":"Dakota State University","ror":"https://ror.org/016yv6y68","country_code":"US","type":"education","lineage":["https://openalex.org/I125467818"]},{"id":"https://openalex.org/I57328836","display_name":"North Dakota State University","ror":"https://ror.org/05h1bnb22","country_code":"US","type":"education","lineage":["https://openalex.org/I57328836"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sumitha George","raw_affiliation_strings":["North Dakota State University"],"affiliations":[{"raw_affiliation_string":"North Dakota State University","institution_ids":["https://openalex.org/I125467818","https://openalex.org/I57328836"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100764674","display_name":"Xueqing Li","orcid":"https://orcid.org/0000-0002-8051-3345"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xueqing Li","raw_affiliation_strings":["Tsinghua University,BNRist/ICFC, EE","BNRist/ICFC, EE, Tsinghua University"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,BNRist/ICFC, EE","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"BNRist/ICFC, EE, Tsinghua University","institution_ids":["https://openalex.org/I99065089"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5100358534"],"corresponding_institution_ids":["https://openalex.org/I99065089"],"apc_list":null,"apc_paid":null,"fwci":2.2532,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.89723268,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"3408","last_page":"3412"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/backup","display_name":"Backup","score":0.8684849739074707},{"id":"https://openalex.org/keywords/power-gating","display_name":"Power gating","score":0.8213350772857666},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.7620545625686646},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7301062941551208},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5374212265014648},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5057156085968018},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.48428648710250854},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4813435971736908},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.48027634620666504},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.38580620288848877},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3745625615119934},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3227023184299469},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2894083857536316},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.25069737434387207},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.07209420204162598}],"concepts":[{"id":"https://openalex.org/C2780945871","wikidata":"https://www.wikidata.org/wiki/Q194274","display_name":"Backup","level":2,"score":0.8684849739074707},{"id":"https://openalex.org/C2780700455","wikidata":"https://www.wikidata.org/wiki/Q7236515","display_name":"Power gating","level":4,"score":0.8213350772857666},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.7620545625686646},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7301062941551208},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5374212265014648},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5057156085968018},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.48428648710250854},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4813435971736908},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.48027634620666504},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38580620288848877},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3745625615119934},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3227023184299469},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2894083857536316},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.25069737434387207},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.07209420204162598}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas48785.2022.9937438","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas48785.2022.9937438","pdf_url":null,"source":{"id":"https://openalex.org/S4363604393","display_name":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8899999856948853}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W1994065394","https://openalex.org/W2009053018","https://openalex.org/W2019240782","https://openalex.org/W2021797032","https://openalex.org/W2023073815","https://openalex.org/W2086077121","https://openalex.org/W2114156831","https://openalex.org/W2117048336","https://openalex.org/W2125667472","https://openalex.org/W2203084632","https://openalex.org/W2290612976","https://openalex.org/W2342750693","https://openalex.org/W2526202524","https://openalex.org/W2563829368","https://openalex.org/W2565270582","https://openalex.org/W2613103714","https://openalex.org/W2622875686","https://openalex.org/W2730425383","https://openalex.org/W2752340955","https://openalex.org/W2894948827","https://openalex.org/W2899077824","https://openalex.org/W2906313120","https://openalex.org/W2912075450","https://openalex.org/W2913902313","https://openalex.org/W2919690119","https://openalex.org/W2934968350","https://openalex.org/W2946658825","https://openalex.org/W2990380486","https://openalex.org/W3013822645","https://openalex.org/W3014426053","https://openalex.org/W3098780461","https://openalex.org/W3109142236","https://openalex.org/W3109708494","https://openalex.org/W3120225267","https://openalex.org/W3126503310","https://openalex.org/W3138860252","https://openalex.org/W4235855303"],"related_works":["https://openalex.org/W2075172982","https://openalex.org/W3013845316","https://openalex.org/W2773448237","https://openalex.org/W2188598220","https://openalex.org/W2783501501","https://openalex.org/W104239181","https://openalex.org/W2783549708","https://openalex.org/W3092470009","https://openalex.org/W2282162811","https://openalex.org/W2083171629"],"abstract_inverted_index":{"In":[0,66],"normally-off":[1],"instant-on":[2],"applications,":[3],"power-gating":[4],"of":[5,24,90,134],"the":[6,88,101,114],"embedded":[7],"memory":[8],"is":[9],"an":[10,35],"effective":[11],"way":[12,37],"for":[13,38,94],"higher":[14,83],"power":[15],"efficiency":[16],"by":[17],"preventing":[18],"long-standby-time":[19],"leakage":[20],"energy.":[21],"Recent":[22],"efforts":[23],"nonvolatile":[25],"SRAM":[26],"(nvSRAM)":[27],"design":[28,76,112],"with":[29,82,107],"in-cell":[30],"NVM":[31],"element":[32],"backup":[33,44],"provide":[34],"efficient":[36],"both":[39],"normal-mode":[40],"computing":[41],"and":[42,45,63],"off-mode":[43],"restore":[46],"(B&R)":[47],"operations.":[48],"For":[49],"these":[50],"efforts,":[51],"circuit":[52],"innovations":[53],"are":[54],"required":[55],"to":[56,122,127],"achieve":[57],"optimal":[58],"balance":[59],"between":[60],"B&R":[61,96,115],"energy":[62,93],"area":[64,131],"overheads.":[65],"this":[67,111],"paper,":[68],"we":[69],"report":[70],"a":[71,128],"novel":[72],"8T/cell":[73],"FeFET-based":[74,80,109],"nvSRAM":[75,104],"that":[77],"outperforms":[78],"prior":[79,108],"designs":[81],"density,":[84],"while":[85],"still":[86],"maintaining":[87],"advantage":[89],"only":[91,123],"sub-fJ":[92],"each":[95],"operation,":[97],"363x":[98],"lower":[99],"than":[100],"existing":[102],"RRAM-based":[103],"design.":[105],"Compared":[106],"designs,":[110],"reduces":[113],"transistor":[116],"count":[117],"per":[118],"cell":[119],"from":[120],"4":[121],"2,":[124],"which":[125],"leads":[126],"significant":[129],"total":[130],"overhead":[132],"reduction":[133],"11%.":[135]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}