{"id":"https://openalex.org/W4385187419","doi":"https://doi.org/10.1109/iscas46773.2023.10181946","title":"Stability Analysis of 6T SRAM at Deep Cryogenic Temperature for Quantum Computing Applications","display_name":"Stability Analysis of 6T SRAM at Deep Cryogenic Temperature for Quantum Computing Applications","publication_year":2023,"publication_date":"2023-05-21","ids":{"openalex":"https://openalex.org/W4385187419","doi":"https://doi.org/10.1109/iscas46773.2023.10181946"},"language":"en","primary_location":{"id":"doi:10.1109/iscas46773.2023.10181946","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas46773.2023.10181946","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030734104","display_name":"Seongbeom Kim","orcid":"https://orcid.org/0000-0002-6495-2479"},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"Seong-Beom Kim","raw_affiliation_strings":["Institute of Microelectronics, Agency for Science, Technology & Research (A*STAR),Singapore","Nanyang Technological University (NTU), Singapore"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology & Research (A*STAR),Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]},{"raw_affiliation_string":"Nanyang Technological University (NTU), Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013201833","display_name":"Aarthy Mani","orcid":"https://orcid.org/0000-0002-6159-6974"},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Aarthy Mani","raw_affiliation_strings":["Institute of Microelectronics, Agency for Science, Technology & Research (A*STAR),Singapore"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology & Research (A*STAR),Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070277137","display_name":"Victor Leong","orcid":"https://orcid.org/0000-0003-3672-2235"},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Leong Xu Heng Victor","raw_affiliation_strings":["Institute of Materials Research & Engineering, Agency for Science, Technology & Research (A*STAR),Singapore"],"affiliations":[{"raw_affiliation_string":"Institute of Materials Research & Engineering, Agency for Science, Technology & Research (A*STAR),Singapore","institution_ids":["https://openalex.org/I115228651"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016044907","display_name":"Yuanjin Zheng","orcid":"https://orcid.org/0000-0002-5768-367X"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Yuanjin Zheng","raw_affiliation_strings":["Nanyang Technological University (NTU),Singapore","Nanyang Technological University (NTU), Singapore"],"affiliations":[{"raw_affiliation_string":"Nanyang Technological University (NTU),Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"Nanyang Technological University (NTU), Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101615706","display_name":"Anh Tuan","orcid":"https://orcid.org/0000-0002-8320-6818"},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Anh Tuan Do","raw_affiliation_strings":["Institute of Microelectronics, Agency for Science, Technology & Research (A*STAR),Singapore"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology & Research (A*STAR),Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5030734104"],"corresponding_institution_ids":["https://openalex.org/I115228651","https://openalex.org/I172675005","https://openalex.org/I4210090209"],"apc_list":null,"apc_paid":null,"fwci":0.5349,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.64441201,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.846205472946167},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6774094104766846},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.6718400716781616},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5921401977539062},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5761048793792725},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.525805652141571},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.515468180179596},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4871332347393036},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.45701366662979126},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4559027850627899},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.44015997648239136},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.42632555961608887},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4229530990123749},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.385577529668808},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3570244312286377},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2751666307449341}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.846205472946167},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6774094104766846},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.6718400716781616},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5921401977539062},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5761048793792725},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.525805652141571},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.515468180179596},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4871332347393036},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45701366662979126},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4559027850627899},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.44015997648239136},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.42632555961608887},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4229530990123749},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.385577529668808},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3570244312286377},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2751666307449341},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas46773.2023.10181946","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas46773.2023.10181946","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6299999952316284,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G6220588818","display_name":null,"funder_award_id":"C210917009","funder_id":"https://openalex.org/F4320320696","funder_display_name":"Agency for Science, Technology and Research"}],"funders":[{"id":"https://openalex.org/F4320320696","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W2002612140","https://openalex.org/W2020065704","https://openalex.org/W2023284567","https://openalex.org/W2041069167","https://openalex.org/W2067168777","https://openalex.org/W2147195941","https://openalex.org/W2155153274","https://openalex.org/W2594082276","https://openalex.org/W2625419435","https://openalex.org/W2761728120","https://openalex.org/W2794745494","https://openalex.org/W2795812195","https://openalex.org/W2900545235","https://openalex.org/W2942539504","https://openalex.org/W2951633375","https://openalex.org/W2987420336","https://openalex.org/W3048488696","https://openalex.org/W3139090188","https://openalex.org/W3177387613","https://openalex.org/W4242275969","https://openalex.org/W4302299674"],"related_works":["https://openalex.org/W2071118425","https://openalex.org/W2781976127","https://openalex.org/W2118528827","https://openalex.org/W2164440002","https://openalex.org/W4285609043","https://openalex.org/W2775062502","https://openalex.org/W2044270051","https://openalex.org/W1582224818","https://openalex.org/W2894151971","https://openalex.org/W1994089309"],"abstract_inverted_index":{"CMOS":[0,57,93,216],"circuits":[1],"operating":[2],"at":[3,39,95,133,170,233],"cryogenic":[4,123,135,223],"temperature":[5,136,163],"are":[6,29,71],"gaining":[7],"interest":[8],"as":[9,33],"one":[10,112],"of":[11,48,102,113,130,157,195,200],"the":[12,44,49,76,81,114,118,128,158,174,183,201,231],"most":[13,115,119],"promising":[14],"approaches":[15],"to":[16,43,167,192,204,229],"efficiently":[17],"scale":[18],"up":[19],"quantum":[20,239],"processors":[21],"in":[22,56,75,122,141,151,207,222,238],"near-":[23],"and":[24,52,67,91,104,117,139,188],"medium":[25],"future.":[26],"However,":[27],"there":[28,84,98],"major":[30],"challenges":[31],"such":[32],"(1)":[34],"strict":[35],"power":[36,47,236],"dissipation":[37],"limit":[38],"4K":[40],"plate":[41],"due":[42],"limited":[45],"cooling":[46],"dilution":[50],"fridge":[51],"(2)":[53],"significant":[54],"shifts":[55],"device":[58],"behavior":[59],"(i.e.":[60],"variations,":[61],"threshold":[62,220],"voltage,":[63],"charge":[64],"carrier":[65],"mobility":[66],"sub-threshold":[68],"slope)":[69],"which":[70],"not":[72],"accurately":[73],"captured":[74],"standard":[77],"BSIM":[78],"models":[79],"from":[80,165],"foundries.":[82],"Although":[83],"have":[85],"been":[86],"extensive":[87],"works":[88],"experimentally":[89],"characterizing":[90],"analyzing":[92],"transistors":[94,217],"\u223c4":[96],"K,":[97],"is":[99,111,226],"a":[100,208],"lack":[101],"digital":[103],"memory":[105],"subsystem":[106],"study.":[107],"Since":[108],"on-chip":[109],"SRAM":[110,159,232],"power-consuming":[116],"vulnerable":[120],"element":[121],"SoC,":[124],"this":[125,190],"work":[126],"analyzes":[127],"stability":[129],"low-voltage":[131,171,234],"6T-SRAM":[132],"deep":[134],"(i.e":[137],"77K":[138],"8K),":[140],"comparison":[142],"with":[143],"300K":[144,166],"operation.":[145],"Our":[146],"DC":[147],"analysis":[148],"showed":[149,181],"that":[150,182,214],"general,":[152],"Write":[153],"static":[154,176,197],"noise":[155,177,198],"margins":[156],"cell":[160],"improves":[161],"when":[162],"changes":[164],"8K,":[168],"even":[169],"condition.":[172],"Regarding":[173],"Read":[175],"margin,":[178],"our":[179],"simulation":[180],"inverters":[184],"exhibit":[185,218],"pseudo-static":[186],"hysteresis":[187],"interestingly":[189],"leads":[191],"an":[193],"improvement":[194],"read":[196],"margin":[199],"cell,":[202],"similar":[203],"what":[205],"observed":[206],"Schmitt-Trigger":[209],"SRAM.":[210],"These":[211],"results":[212],"suggest":[213],"although":[215],"higher":[219],"voltage":[221],"temperature,":[224],"it":[225],"still":[227],"possible":[228],"operate":[230],"for":[235],"saving":[237],"computing":[240],"applications.":[241]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}