{"id":"https://openalex.org/W3089622397","doi":"https://doi.org/10.1109/iscas45731.2020.9180663","title":"A Reconfigurable CMOS-Memristor Active Inductor","display_name":"A Reconfigurable CMOS-Memristor Active Inductor","publication_year":2020,"publication_date":"2020-09-29","ids":{"openalex":"https://openalex.org/W3089622397","doi":"https://doi.org/10.1109/iscas45731.2020.9180663","mag":"3089622397"},"language":"en","primary_location":{"id":"doi:10.1109/iscas45731.2020.9180663","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas45731.2020.9180663","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101825641","display_name":"Jiawei Shen","orcid":"https://orcid.org/0000-0002-9728-2352"},"institutions":[{"id":"https://openalex.org/I47508984","display_name":"Imperial College London","ror":"https://ror.org/041kmwe10","country_code":"GB","type":"education","lineage":["https://openalex.org/I47508984"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"Jiawei Shen","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Imperial College London, London, UK"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Imperial College London, London, UK","institution_ids":["https://openalex.org/I47508984"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056739019","display_name":"Spyros Stathopoulos","orcid":"https://orcid.org/0000-0002-0833-6209"},"institutions":[{"id":"https://openalex.org/I43439940","display_name":"University of Southampton","ror":"https://ror.org/01ryk1543","country_code":"GB","type":"education","lineage":["https://openalex.org/I43439940"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Spyros Stathopoulos","raw_affiliation_strings":["Centre for Electronics Frontiers, University of Southampton, Southampton, UK"],"affiliations":[{"raw_affiliation_string":"Centre for Electronics Frontiers, University of Southampton, Southampton, UK","institution_ids":["https://openalex.org/I43439940"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088089733","display_name":"Themis Prodromakis","orcid":"https://orcid.org/0000-0002-6267-6909"},"institutions":[{"id":"https://openalex.org/I43439940","display_name":"University of Southampton","ror":"https://ror.org/01ryk1543","country_code":"GB","type":"education","lineage":["https://openalex.org/I43439940"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Themis Prodromakis","raw_affiliation_strings":["Centre for Electronics Frontiers, University of Southampton, Southampton, UK"],"affiliations":[{"raw_affiliation_string":"Centre for Electronics Frontiers, University of Southampton, Southampton, UK","institution_ids":["https://openalex.org/I43439940"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5048618563","display_name":"Christos Papavassiliou","orcid":"https://orcid.org/0000-0002-8003-2146"},"institutions":[{"id":"https://openalex.org/I47508984","display_name":"Imperial College London","ror":"https://ror.org/041kmwe10","country_code":"GB","type":"education","lineage":["https://openalex.org/I47508984"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Christos Papavassiliou","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Imperial College London, London, UK"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Imperial College London, London, UK","institution_ids":["https://openalex.org/I47508984"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5101825641"],"corresponding_institution_ids":["https://openalex.org/I47508984"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.09052282,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9962999820709229,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.878297746181488},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7217979431152344},{"id":"https://openalex.org/keywords/inductor","display_name":"Inductor","score":0.6869378089904785},{"id":"https://openalex.org/keywords/inductance","display_name":"Inductance","score":0.604794442653656},{"id":"https://openalex.org/keywords/gyrator","display_name":"Gyrator","score":0.4927048981189728},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4899434447288513},{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.4437049329280853},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.43016910552978516},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4125079810619354},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.38273340463638306},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2124987542629242},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11856594681739807},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11178544163703918}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.878297746181488},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7217979431152344},{"id":"https://openalex.org/C144534570","wikidata":"https://www.wikidata.org/wiki/Q5325","display_name":"Inductor","level":3,"score":0.6869378089904785},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.604794442653656},{"id":"https://openalex.org/C103113521","wikidata":"https://www.wikidata.org/wiki/Q677197","display_name":"Gyrator","level":2,"score":0.4927048981189728},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4899434447288513},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.4437049329280853},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.43016910552978516},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4125079810619354},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38273340463638306},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2124987542629242},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11856594681739807},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11178544163703918}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas45731.2020.9180663","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas45731.2020.9180663","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8899999856948853,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G6097759542","display_name":null,"funder_award_id":"EP/R024642/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"}],"funders":[{"id":"https://openalex.org/F4320334627","display_name":"Engineering and Physical Sciences Research Council","ror":"https://ror.org/0439y7842"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1494973819","https://openalex.org/W1571242828","https://openalex.org/W2064063053","https://openalex.org/W2112181056","https://openalex.org/W2133448352","https://openalex.org/W2162651880","https://openalex.org/W2605663629"],"related_works":["https://openalex.org/W2769490182","https://openalex.org/W2196183592","https://openalex.org/W3168403633","https://openalex.org/W2120661608","https://openalex.org/W2114486131","https://openalex.org/W1487788472","https://openalex.org/W2117520483","https://openalex.org/W4226174229","https://openalex.org/W2144738648","https://openalex.org/W2013736887"],"abstract_inverted_index":{"A":[0],"methodology":[1],"is":[2,93,107,116,136,155],"introduced":[3],"here":[4],"to":[5,14,27,60,70,129,140,158],"exploit":[6],"the":[7,10,62,77,90,162],"programmability":[8],"of":[9,37,43,51,65,76,89,127,146],"memristors":[11],"in":[12,95],"order":[13],"realize":[15],"reconfigurable":[16],"monolithic":[17],"analogue":[18],"circuit":[19,92],"elements.":[20],"Classical":[21],"network":[22],"synthesis":[23],"methods":[24],"are":[25,55],"used":[26,69],"synthesize":[28],"adjustable":[29],"active":[30,52,132],"inductors":[31],"with":[32,142],"inductance":[33,53,133],"values":[34,54],"exceeding":[35],"those":[36],"on-chip":[38],"passives":[39],"by":[40,57,84],"several":[41],"orders":[42],"magnitude.":[44],"In":[45],"this":[46],"paper,":[47],"a":[48,117,123],"wide":[49],"range":[50,126,134],"obtained":[56],"employing":[58],"memristor":[59,115,120],"control":[61],"biasing":[63],"current":[64],"operational":[66],"transconductance":[67],"amplifiers":[68],"implement":[71],"gyrators.":[72],"The":[73,87,112,131,151],"gyration":[74],"constant":[75],"proposed":[78],"gyrator":[79],"will":[80],"be":[81],"linearly":[82],"controlled":[83],"memristance":[85,125,163],"state.":[86],"implementation":[88],"designed":[91],"realized":[94],"0.18\u03bcm":[96],"commercially":[97],"available":[98],"complementary":[99],"metal-oxide-semiconductor":[100],"(CMOS)":[101],"technology":[102],"from":[103,137],"TSMC.":[104],"Circuit":[105],"performance":[106],"simulated":[108],"using":[109],"Cadence":[110],"Virtuoso.":[111],"utilized":[113],"off-chip":[114],"metal-oxide":[118],"bi-layer":[119],"which":[121],"exhibits":[122],"non-volatile":[124],"4.7k\u03a9":[128],"170k\u03a9.":[130],"achieved":[135],"approximately":[138],"95\u03bcH":[139],"1.55mH":[141],"an":[143],"inductive":[144],"bandwidth":[145],"69MHz":[147],"and":[148,164],"18MHz":[149],"respectively.":[150],"total":[152],"power":[153],"consumption":[154],"between":[156],"0.21mW":[157],"1.95mW":[159],"depending":[160],"on":[161],"equivalent":[165],"inductance.":[166]},"counts_by_year":[{"year":2024,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}