{"id":"https://openalex.org/W3090976330","doi":"https://doi.org/10.1109/iscas45731.2020.9180543","title":"A 52dB Spurious-Free Dynamic Range Ku-Band LNA-Mixer in a 130nm SiGe BiCMOS Process","display_name":"A 52dB Spurious-Free Dynamic Range Ku-Band LNA-Mixer in a 130nm SiGe BiCMOS Process","publication_year":2020,"publication_date":"2020-09-29","ids":{"openalex":"https://openalex.org/W3090976330","doi":"https://doi.org/10.1109/iscas45731.2020.9180543","mag":"3090976330"},"language":"en","primary_location":{"id":"doi:10.1109/iscas45731.2020.9180543","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas45731.2020.9180543","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5044547462","display_name":"Apoorva Bhatia","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Apoorva Bhatia","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institue of Technology, Madras; Texas Instruments India Ltd., Bangalore India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institue of Technology, Madras; Texas Instruments India Ltd., Bangalore India","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037352284","display_name":"Yogesh Darwhekar","orcid":null},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Yogesh Darwhekar","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institue of Technology, Madras","Department of Electrical Engineering, Indian Institue of Technology, Chennai, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institue of Technology, Madras","institution_ids":["https://openalex.org/I24676775"]},{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institue of Technology, Chennai, India","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104123115","display_name":"Subhashish Mukherjee","orcid":null},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Subhashish Mukherjee","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institue of Technology, Madras","Department of Electrical Engineering, Indian Institue of Technology, Chennai, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institue of Technology, Madras","institution_ids":["https://openalex.org/I24676775"]},{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institue of Technology, Chennai, India","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113788930","display_name":"Samuel P. Martin","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Samuel Martin","raw_affiliation_strings":["Texas Instruments, Santa Clara, USA","Texas Instruments, Santa Clara, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments, Santa Clara, USA","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"Texas Instruments, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080522900","display_name":"Nagendra Krishnapura","orcid":"https://orcid.org/0000-0002-8429-8910"},"institutions":[{"id":"https://openalex.org/I4210109535","display_name":"Texas Instruments (India)","ror":"https://ror.org/01t305n31","country_code":"IN","type":"company","lineage":["https://openalex.org/I4210109535","https://openalex.org/I74760111"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Nagendra Krishnapura","raw_affiliation_strings":["Texas Instruments India Ltd., Bangalore India","Texas Instruments India Ltd., Bangalore, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments India Ltd., Bangalore India","institution_ids":["https://openalex.org/I4210109535"]},{"raw_affiliation_string":"Texas Instruments India Ltd., Bangalore, India","institution_ids":["https://openalex.org/I4210109535"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.12880438,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.7404792308807373},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.6475129127502441},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.6454883813858032},{"id":"https://openalex.org/keywords/dynamic-range","display_name":"Dynamic range","score":0.6042885780334473},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5812162756919861},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.46932098269462585},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.4657975137233734},{"id":"https://openalex.org/keywords/silicon-germanium","display_name":"Silicon-germanium","score":0.46222153306007385},{"id":"https://openalex.org/keywords/frequency-mixer","display_name":"Frequency mixer","score":0.4606355130672455},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.446536660194397},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4438631236553192},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.41779983043670654},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4049343466758728},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.362795889377594},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3313005864620209},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.31583529710769653},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.26711905002593994},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2480427324771881},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.17284393310546875},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.15539374947547913}],"concepts":[{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.7404792308807373},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.6475129127502441},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.6454883813858032},{"id":"https://openalex.org/C87133666","wikidata":"https://www.wikidata.org/wiki/Q1161699","display_name":"Dynamic range","level":2,"score":0.6042885780334473},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5812162756919861},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.46932098269462585},{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.4657975137233734},{"id":"https://openalex.org/C2780389399","wikidata":"https://www.wikidata.org/wiki/Q367849","display_name":"Silicon-germanium","level":3,"score":0.46222153306007385},{"id":"https://openalex.org/C15982861","wikidata":"https://www.wikidata.org/wiki/Q1357187","display_name":"Frequency mixer","level":3,"score":0.4606355130672455},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.446536660194397},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4438631236553192},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.41779983043670654},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4049343466758728},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.362795889377594},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3313005864620209},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.31583529710769653},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.26711905002593994},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2480427324771881},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.17284393310546875},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.15539374947547913}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas45731.2020.9180543","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas45731.2020.9180543","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8600000143051147,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W156973439","https://openalex.org/W1521661193","https://openalex.org/W1990182768","https://openalex.org/W2051775834","https://openalex.org/W2114198475","https://openalex.org/W2122001613","https://openalex.org/W2144228276","https://openalex.org/W2461804942","https://openalex.org/W2483320754","https://openalex.org/W2762918215","https://openalex.org/W2763535652","https://openalex.org/W2798062470"],"related_works":["https://openalex.org/W2382937231","https://openalex.org/W1594634106","https://openalex.org/W2064881384","https://openalex.org/W3000916362","https://openalex.org/W2024400826","https://openalex.org/W2515952003","https://openalex.org/W2151988453","https://openalex.org/W2010358330","https://openalex.org/W4390187685","https://openalex.org/W4250564232"],"abstract_inverted_index":{"This":[0,70,105],"work":[1],"presents":[2],"a":[3,17,34,60,65,107,115],"high-linearity,":[4],"low":[5,61,66],"noise":[6,89],"figure,":[7,90],"Ku-band":[8],"(12":[9],"to":[10,33,44],"18":[11],"GHz)":[12],"LNA-Mixer":[13],"front-end":[14],"block":[15],"in":[16,80,114],"130":[18],"nm":[19],"SiGe":[20],"BiCMOS":[21],"process.":[22],"A":[23],"tuned":[24],"transformer":[25],"converts":[26],"the":[27,31,45,49,53,73,76,81],"single-ended":[28],"output":[29,58,67],"of":[30,48,52,75,111],"LNA":[32,57],"differential":[35],"signal":[36],"at":[37,93],"its":[38,84],"secondary":[39],"which":[40],"is":[41],"coupled":[42],"directly":[43],"tail":[46],"nodes":[47],"switching":[50],"pairs":[51],"Gilbert":[54],"mixer.":[55],"The":[56,86,119],"sees":[59],"impedance,":[62],"and":[63,91,102,124],"hence":[64],"voltage":[68],"swing.":[69],"along":[71],"with":[72],"absence":[74],"extra":[77],"trans-conductance":[78],"stage":[79],"mixer":[82],"enhances":[83],"linearity.":[85],"measured":[87],"gain,":[88],"IIP3":[92],"16":[94],"GHz":[95,117],"input":[96],"are":[97],"12":[98],"dB,":[99,101],"4":[100,103,116],"dBm.":[104],"gives":[106],"spurious-free":[108],"dynamic":[109],"range":[110],"52":[112],"dB":[113],"bandwidth.":[118],"chip":[120],"consumes":[121],"272":[122],"mW":[123],"occupies":[125],"1mm2.":[126]},"counts_by_year":[{"year":2024,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}