{"id":"https://openalex.org/W2943518183","doi":"https://doi.org/10.1109/iscas.2019.8702166","title":"A Two-Stage Push-Pull Power Amplifier with Electro-Thermal Effects Study in 130 nm SOI CMOS for IEEE 802.11ac Applications","display_name":"A Two-Stage Push-Pull Power Amplifier with Electro-Thermal Effects Study in 130 nm SOI CMOS for IEEE 802.11ac Applications","publication_year":2019,"publication_date":"2019-05-01","ids":{"openalex":"https://openalex.org/W2943518183","doi":"https://doi.org/10.1109/iscas.2019.8702166","mag":"2943518183"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2019.8702166","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2019.8702166","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020415885","display_name":"Ting Guo","orcid":"https://orcid.org/0000-0002-7853-7479"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Ting Guo","raw_affiliation_strings":["IC Design Center of Excellence, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IC Design Center of Excellence, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100427262","display_name":"Bo Chen","orcid":"https://orcid.org/0000-0001-6150-3881"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Bo Chen","raw_affiliation_strings":["IC Design Center of Excellence, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IC Design Center of Excellence, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026522298","display_name":"Kai Tang","orcid":"https://orcid.org/0000-0001-8512-3701"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Kai Tang","raw_affiliation_strings":["IC Design Center of Excellence, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IC Design Center of Excellence, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010364024","display_name":"Liheng Lou","orcid":"https://orcid.org/0000-0002-3431-8709"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Liheng Lou","raw_affiliation_strings":["IC Design Center of Excellence, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IC Design Center of Excellence, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057484459","display_name":"Zhongyuan Fang","orcid":"https://orcid.org/0000-0002-6499-4353"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Zhongyuan Fang","raw_affiliation_strings":["IC Design Center of Excellence, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IC Design Center of Excellence, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017343037","display_name":"Bo Yu","orcid":"https://orcid.org/0000-0003-3300-0464"},"institutions":[{"id":"https://openalex.org/I4210136567","display_name":"GlobalFoundries (Singapore)","ror":"https://ror.org/03whnfd14","country_code":"SG","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210136567"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Bo Yu","raw_affiliation_strings":["GLOBALFOUNDRIES Inc, Singapore, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES Inc, Singapore, Singapore","institution_ids":["https://openalex.org/I4210136567"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047244641","display_name":"Shaoqiang Zhang","orcid":"https://orcid.org/0000-0002-4127-0539"},"institutions":[{"id":"https://openalex.org/I4210136567","display_name":"GlobalFoundries (Singapore)","ror":"https://ror.org/03whnfd14","country_code":"SG","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210136567"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Shaoqiang Zhang","raw_affiliation_strings":["GLOBALFOUNDRIES Inc, Singapore, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES Inc, Singapore, Singapore","institution_ids":["https://openalex.org/I4210136567"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016044907","display_name":"Yuanjin Zheng","orcid":"https://orcid.org/0000-0002-5768-367X"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Yuanjin Zheng","raw_affiliation_strings":["IC Design Center of Excellence, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IC Design Center of Excellence, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9973000288009644,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7141503095626831},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6343130469322205},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.6066356897354126},{"id":"https://openalex.org/keywords/power-bandwidth","display_name":"Power bandwidth","score":0.588527500629425},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5589442253112793},{"id":"https://openalex.org/keywords/impedance-matching","display_name":"Impedance matching","score":0.5527698397636414},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.504496693611145},{"id":"https://openalex.org/keywords/balun","display_name":"Balun","score":0.487911194562912},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.47726839780807495},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.46700891852378845},{"id":"https://openalex.org/keywords/direct-coupled-amplifier","display_name":"Direct-coupled amplifier","score":0.41761448979377747},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.39423102140426636},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3879450559616089},{"id":"https://openalex.org/keywords/operational-amplifier","display_name":"Operational amplifier","score":0.36764511466026306},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.32864370942115784},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.3172372281551361},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3107842803001404},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.30692172050476074},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27995210886001587},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1521611213684082},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.14643242955207825}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7141503095626831},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6343130469322205},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6066356897354126},{"id":"https://openalex.org/C191907038","wikidata":"https://www.wikidata.org/wiki/Q7236476","display_name":"Power bandwidth","level":5,"score":0.588527500629425},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5589442253112793},{"id":"https://openalex.org/C612350","wikidata":"https://www.wikidata.org/wiki/Q1761108","display_name":"Impedance matching","level":3,"score":0.5527698397636414},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.504496693611145},{"id":"https://openalex.org/C114489654","wikidata":"https://www.wikidata.org/wiki/Q805838","display_name":"Balun","level":3,"score":0.487911194562912},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.47726839780807495},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.46700891852378845},{"id":"https://openalex.org/C172218469","wikidata":"https://www.wikidata.org/wiki/Q4477697","display_name":"Direct-coupled amplifier","level":5,"score":0.41761448979377747},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.39423102140426636},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3879450559616089},{"id":"https://openalex.org/C145366948","wikidata":"https://www.wikidata.org/wiki/Q178947","display_name":"Operational amplifier","level":4,"score":0.36764511466026306},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.32864370942115784},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.3172372281551361},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3107842803001404},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.30692172050476074},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27995210886001587},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1521611213684082},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.14643242955207825},{"id":"https://openalex.org/C21822782","wikidata":"https://www.wikidata.org/wiki/Q131214","display_name":"Antenna (radio)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2019.8702166","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2019.8702166","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1486469671","https://openalex.org/W1973133933","https://openalex.org/W2049089411","https://openalex.org/W2166854455","https://openalex.org/W2178902883","https://openalex.org/W2307399332","https://openalex.org/W2519716035","https://openalex.org/W2606979351","https://openalex.org/W2763753758","https://openalex.org/W4236065598","https://openalex.org/W6629053461"],"related_works":["https://openalex.org/W2355154599","https://openalex.org/W2518035769","https://openalex.org/W3088179638","https://openalex.org/W2357901411","https://openalex.org/W2168845032","https://openalex.org/W2141469417","https://openalex.org/W2091782502","https://openalex.org/W2096026133","https://openalex.org/W2540318259","https://openalex.org/W805037886"],"abstract_inverted_index":{"The":[0,50],"paper":[1],"presents":[2],"a":[3],"two-stage":[4],"cascade":[5],"push-pull":[6],"power":[7,44,59,87,103,112],"amplifier":[8,41,46],"(PA)":[9],"with":[10,67,89],"floating-body":[11],"transistors":[12],"in":[13,38],"130":[14],"nm":[15],"Silicon-On-Insulator":[16],"(SOI)":[17],"CMOS":[18],"process":[19],"for":[20],"IEEE":[21],"802.11ac":[22],"application.":[23],"In":[24],"the":[25,64,81],"proposed":[26,51],"design,":[27],"on":[28],"chip":[29,72],"baluns,":[30],"which":[31],"can":[32,53],"realize":[33],"impedance":[34],"matching,":[35],"are":[36],"used":[37],"driver":[39],"stage":[40,45],"input":[42],"and":[43,60,110],"output":[47,58,102],"matching":[48],"networks.":[49],"PA":[52,83],"achieve":[54],"high":[55,57],"gain,":[56],"wide":[61],"bandwidth":[62,92],"at":[63,104],"same":[65],"time":[66],"0.819mm":[68],"<sup":[69],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[70],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[71],"area":[73],"including":[74],"pads.":[75],"With":[76],"2.5":[77],"V":[78],"supply":[79],"voltage,":[80],"implemented":[82],"achieves":[84],"20.31":[85],"dB":[86,91,106],"gain":[88],"3":[90],"range":[93],"from":[94],"3.9":[95],"GHz":[96],"to":[97],"6.19":[98],"GHz,":[99],"20.96":[100],"dBm":[101],"1":[105],"compression":[107],"point":[108],"(OP-1dB)":[109],"9.85%":[111],"added":[113],"efficiency":[114],"(PAE).":[115]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-07-15T18:14:33.161393","created_date":"2025-10-10T00:00:00"}