{"id":"https://openalex.org/W2943606811","doi":"https://doi.org/10.1109/iscas.2019.8702154","title":"Independent-Gate P-Type TFETs using Double Heterojunction Structures","display_name":"Independent-Gate P-Type TFETs using Double Heterojunction Structures","publication_year":2019,"publication_date":"2019-05-01","ids":{"openalex":"https://openalex.org/W2943606811","doi":"https://doi.org/10.1109/iscas.2019.8702154","mag":"2943606811"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2019.8702154","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2019.8702154","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083587889","display_name":"Shengwei Ke","orcid":null},"institutions":[{"id":"https://openalex.org/I109935558","display_name":"Ningbo University","ror":"https://ror.org/03et85d35","country_code":"CN","type":"education","lineage":["https://openalex.org/I109935558"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shengwei Ke","raw_affiliation_strings":["Faculty of Information Science and Technology, Ningbo University, Ningbo, Chian"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Information Science and Technology, Ningbo University, Ningbo, Chian","institution_ids":["https://openalex.org/I109935558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023402050","display_name":"Jianping Hu","orcid":"https://orcid.org/0000-0002-6469-1061"},"institutions":[{"id":"https://openalex.org/I109935558","display_name":"Ningbo University","ror":"https://ror.org/03et85d35","country_code":"CN","type":"education","lineage":["https://openalex.org/I109935558"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jianping Hu","raw_affiliation_strings":["Faculty of Information Science and Technology, Ningbo University, Ningbo, Chian"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Information Science and Technology, Ningbo University, Ningbo, Chian","institution_ids":["https://openalex.org/I109935558"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103847038","display_name":"Xiaoxiao Xu","orcid":null},"institutions":[{"id":"https://openalex.org/I109935558","display_name":"Ningbo University","ror":"https://ror.org/03et85d35","country_code":"CN","type":"education","lineage":["https://openalex.org/I109935558"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaoxiao Xu","raw_affiliation_strings":["Faculty of Information Science and Technology, Ningbo University, Ningbo, Chian"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Information Science and Technology, Ningbo University, Ningbo, Chian","institution_ids":["https://openalex.org/I109935558"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I109935558"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.8087995052337646},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7215062379837036},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7126901149749756},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.6304769515991211},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.585206925868988},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.581656813621521},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.4778044819831848},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.43656736612319946},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4329102635383606},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.24785655736923218},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2271115779876709},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09627622365951538}],"concepts":[{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.8087995052337646},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7215062379837036},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7126901149749756},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.6304769515991211},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.585206925868988},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.581656813621521},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.4778044819831848},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.43656736612319946},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4329102635383606},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.24785655736923218},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2271115779876709},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09627622365951538},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2019.8702154","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2019.8702154","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5899999737739563}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W142327980","https://openalex.org/W1975037717","https://openalex.org/W2005745604","https://openalex.org/W2025301636","https://openalex.org/W2030141120","https://openalex.org/W2062632887","https://openalex.org/W2092863319","https://openalex.org/W2111229858","https://openalex.org/W2111852168","https://openalex.org/W2518605302","https://openalex.org/W2558815889","https://openalex.org/W2772992317","https://openalex.org/W2787374271","https://openalex.org/W4249892115","https://openalex.org/W6656970495","https://openalex.org/W6726499857","https://openalex.org/W6748370575"],"related_works":["https://openalex.org/W1515161531","https://openalex.org/W4379114818","https://openalex.org/W2921865011","https://openalex.org/W1631058538","https://openalex.org/W2021859258","https://openalex.org/W4323658053","https://openalex.org/W2013924061","https://openalex.org/W2012959172","https://openalex.org/W1995707634","https://openalex.org/W2071775671"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"introduce":[4],"an":[5,38,42],"independent":[6],"gate":[7,79],"p-type":[8],"tunneling":[9,55],"field-effect":[10],"transistor":[11],"using":[12,115],"double":[13,33,116],"heterojunction":[14,34,40,117],"structures":[15,35,118],"(IG-DHJ-pTFET),":[16],"which":[17,45],"has":[18],"the":[19,47,52,59,63,78,88,121],"characteristics":[20],"of":[21,37,62,123],"high":[22,27],"turn-on":[23],"current":[24,29],"(ION)":[25],"and":[26,41,50,73,91,104],"turn-on/turn-off":[28],"(ION/IOFF)":[30],"ratio.":[31],"The":[32,82,111],"consist":[36],"AlInAsSb/InGaAs":[39],"InGaAs/GaAsSb":[43],"heterojunction,":[44],"shorten":[46],"tunnel":[48],"distance":[49],"improve":[51],"on":[53],"state":[54],"probability.":[56],"We":[57,70],"optimize":[58],"leakage":[60],"currents":[61],"IG-DHJ-pTFET":[64],"devices":[65],"by":[66,76],"varying":[67],"gate-on-drain":[68],"overlapping.":[69],"obtain":[71],"high-threshold":[72,90],"low-threshold":[74,92],"IG-DHJ-pTFETs":[75,93,114],"adjusting":[77],"work":[80],"function.":[81],"TCAD":[83],"simulation":[84],"results":[85],"show":[86],"that":[87],"proposed":[89,112],"are":[94],"logically":[95],"equivalent":[96],"to":[97],"two":[98],"short-gate":[99],"(SG)":[100],"transistors":[101,124],"in":[102,126],"series":[103],"parallel,":[105],"respectively,":[106],"with":[107],"excellent":[108],"electrical":[109],"characteristics.":[110],"dual-threshold":[113],"can":[119],"reduce":[120],"number":[122],"used":[125],"circuits.":[127]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}