{"id":"https://openalex.org/W2800793808","doi":"https://doi.org/10.1109/iscas.2018.8351556","title":"A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy","display_name":"A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy","publication_year":2018,"publication_date":"2018-01-01","ids":{"openalex":"https://openalex.org/W2800793808","doi":"https://doi.org/10.1109/iscas.2018.8351556","mag":"2800793808"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2018.8351556","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2018.8351556","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068195163","display_name":"Rahul K. Yadav","orcid":"https://orcid.org/0000-0002-9722-1218"},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Rahul Kumar Yadav","raw_affiliation_strings":["IHP, Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073236750","display_name":"Jan Wessel","orcid":"https://orcid.org/0000-0003-3522-447X"},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Jan Wessel","raw_affiliation_strings":["IHP, Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037911538","display_name":"Mohamed Hussein Eissa","orcid":"https://orcid.org/0000-0001-6232-6979"},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mohamed Hussein Eissa","raw_affiliation_strings":["IHP, Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074241900","display_name":"Farabi Ibne Jamal","orcid":"https://orcid.org/0000-0003-1236-2968"},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Farabi Ibne Jamal","raw_affiliation_strings":["IHP, Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082307219","display_name":"Maciej Kucharski","orcid":"https://orcid.org/0000-0001-9598-6498"},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Maciej Kucharski","raw_affiliation_strings":["IHP, Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5034303749","display_name":"Dietmar Kissinger","orcid":"https://orcid.org/0000-0002-9698-4432"},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Dietmar Kissinger","raw_affiliation_strings":["IHP, Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I92894754"],"apc_list":null,"apc_paid":null,"fwci":0.2619,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.56104673,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"19","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11607","display_name":"Microwave and Dielectric Measurement Techniques","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11607","display_name":"Microwave and Dielectric Measurement Techniques","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.6569312810897827},{"id":"https://openalex.org/keywords/detector","display_name":"Detector","score":0.5301552414894104},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.502281665802002},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4840199649333954},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.45137184858322144},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4379408657550812},{"id":"https://openalex.org/keywords/spectroscopy","display_name":"Spectroscopy","score":0.43676093220710754},{"id":"https://openalex.org/keywords/gamma-spectroscopy","display_name":"Gamma spectroscopy","score":0.4140665829181671},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.32590845227241516},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2859739065170288},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24802246689796448},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.15364649891853333}],"concepts":[{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6569312810897827},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.5301552414894104},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.502281665802002},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4840199649333954},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.45137184858322144},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4379408657550812},{"id":"https://openalex.org/C32891209","wikidata":"https://www.wikidata.org/wiki/Q483666","display_name":"Spectroscopy","level":2,"score":0.43676093220710754},{"id":"https://openalex.org/C206550106","wikidata":"https://www.wikidata.org/wiki/Q906816","display_name":"Gamma spectroscopy","level":3,"score":0.4140665829181671},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.32590845227241516},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2859739065170288},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24802246689796448},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.15364649891853333},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2018.8351556","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2018.8351556","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8399999737739563}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1593878852","https://openalex.org/W1850497187","https://openalex.org/W1968541012","https://openalex.org/W1993799384","https://openalex.org/W2106216811","https://openalex.org/W2133517967","https://openalex.org/W2156850473","https://openalex.org/W2170700281","https://openalex.org/W2278247993","https://openalex.org/W2567655139","https://openalex.org/W2578692927","https://openalex.org/W2610494940","https://openalex.org/W3217647373","https://openalex.org/W6642668474","https://openalex.org/W6675712906","https://openalex.org/W6737268310"],"related_works":["https://openalex.org/W27766761","https://openalex.org/W2538534558","https://openalex.org/W2043562057","https://openalex.org/W1523515178","https://openalex.org/W2366906938","https://openalex.org/W4319296072","https://openalex.org/W2285871317","https://openalex.org/W128686575","https://openalex.org/W2320327789","https://openalex.org/W2904228629"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3,64],"design,":[4],"implementation,":[5],"layout":[6],"and":[7,45,71,83,97],"measured":[8],"results":[9],"of":[10,60,78,91],"a":[11,100],"30":[12],"GHz":[13,44],"power":[14,79],"detector":[15],"based":[16],"BiCMOS":[17,31],"reflectometer":[18,23],"for":[19,63,103],"dielectric":[20,67,105],"spectroscopy.":[21],"The":[22,73],"has":[24,46],"been":[25,47],"implemented":[26],"in":[27,66],"0.13":[28],"\u03bcm":[29],"SiGe":[30],"technology":[32],"with":[33,49],"f":[34],"<sub":[35,39],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[36,40,95],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">t</sub>":[37],"/f":[38],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">max</sub>":[41],"=":[42],"250/340":[43],"deployed":[48],"an":[50,57,89],"open-ended":[51],"stub":[52],"line":[53],"sensor.":[54],"It":[55,87],"provides":[56],"output":[58],"voltage":[59],"43":[61],"mV":[62],"change":[65],"permittivity":[68],"between":[69],"ethanol":[70],"methanol.":[72],"system":[74,102],"consumes":[75],"58.32":[76],"mW":[77],"from":[80],"1.8":[81],"V":[82,85],"3.3":[84],"supply.":[86],"occupies":[88],"area":[90],"2.27":[92],"mm":[93],"<sup":[94],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[96],"it":[98],"is":[99],"prospective":[101],"miniaturized":[104],"sensing":[106],"applications.":[107]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}