{"id":"https://openalex.org/W2803055098","doi":"https://doi.org/10.1109/iscas.2018.8350892","title":"A Ka-band Phase Shifting Low Noise Amplifier with Gain Error Compensation for 5G RF beam forming array using 14nm FinFET CMOS","display_name":"A Ka-band Phase Shifting Low Noise Amplifier with Gain Error Compensation for 5G RF beam forming array using 14nm FinFET CMOS","publication_year":2018,"publication_date":"2018-05-01","ids":{"openalex":"https://openalex.org/W2803055098","doi":"https://doi.org/10.1109/iscas.2018.8350892","mag":"2803055098"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2018.8350892","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2018.8350892","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100337285","display_name":"Youngmin Kim","orcid":"https://orcid.org/0000-0001-6399-1719"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Youngmin Kim","raw_affiliation_strings":["RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea"],"affiliations":[{"raw_affiliation_string":"RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112204049","display_name":"Pilsung Jang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Pilsung Jang","raw_affiliation_strings":["RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea"],"affiliations":[{"raw_affiliation_string":"RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015866406","display_name":"Joongseok Lim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joongseok Lim","raw_affiliation_strings":["RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea"],"affiliations":[{"raw_affiliation_string":"RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103359792","display_name":"Won Il Ko","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Won Ko","raw_affiliation_strings":["RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea"],"affiliations":[{"raw_affiliation_string":"RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102732022","display_name":"Seung-Chan Heo","orcid":"https://orcid.org/0000-0002-8933-1994"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seungchan Heo","raw_affiliation_strings":["RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea"],"affiliations":[{"raw_affiliation_string":"RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101424767","display_name":"Jongwoo Lee","orcid":"https://orcid.org/0000-0001-6746-9645"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jongwoo Lee","raw_affiliation_strings":["RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea"],"affiliations":[{"raw_affiliation_string":"RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003902642","display_name":"Thomas Byunghak Cho","orcid":"https://orcid.org/0000-0002-8053-6491"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Thomas Byunghak Cho","raw_affiliation_strings":["RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea"],"affiliations":[{"raw_affiliation_string":"RF Development Team, Samsung Semiconductor, Hwaseong-Si, Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5100337285"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.7725,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.73242306,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5836421251296997},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5490449666976929},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.5206872224807739},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5068722367286682},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5047255754470825},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.4706057012081146},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.42691928148269653},{"id":"https://openalex.org/keywords/phase","display_name":"Phase (matter)","score":0.4175393581390381},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3644726872444153},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.28079432249069214},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19911539554595947}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5836421251296997},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5490449666976929},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.5206872224807739},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5068722367286682},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5047255754470825},{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.4706057012081146},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.42691928148269653},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.4175393581390381},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3644726872444153},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.28079432249069214},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19911539554595947},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2018.8350892","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2018.8350892","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8700000047683716}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1967708187","https://openalex.org/W2100835570","https://openalex.org/W2105215851","https://openalex.org/W2110178592","https://openalex.org/W2122610088","https://openalex.org/W2125019598","https://openalex.org/W2126412862","https://openalex.org/W2131556268","https://openalex.org/W2149301758","https://openalex.org/W2150078633","https://openalex.org/W2158017712"],"related_works":["https://openalex.org/W2382937231","https://openalex.org/W3000916362","https://openalex.org/W2024400826","https://openalex.org/W2515952003","https://openalex.org/W2010358330","https://openalex.org/W2064881384","https://openalex.org/W4390187685","https://openalex.org/W2151988453","https://openalex.org/W2366126408","https://openalex.org/W2289698412"],"abstract_inverted_index":{"A":[0],"Ka-band":[1],"phase":[2,32,44,58,72,98,118,125],"shifting":[3,45,59,73,99,119],"low":[4,39,74],"noise":[5,75,84],"amplifier":[6,76],"(LNA)":[7],"using":[8],"stacked-FET":[9],"structure":[10],"in":[11,130,135],"14nm":[12],"FinFET":[13],"CMOS":[14],"is":[15,29],"presented":[16],"for":[17,31,47,56],"5G":[18,137],"beam":[19],"forming":[20],"array.":[21],"The":[22,34,70,113],"gate":[23],"capacitance":[24],"of":[25,80,86,115],"the":[26,43,52,97,116,131,136],"middle":[27],"CG-FET":[28,37,46,68],"adjusted":[30],"variation.":[33],"additionally":[35],"stacked":[36],"provides":[38],"load":[40],"impedance":[41],"to":[42,104,110],"minimizing":[48],"gain":[49,62,79,94,127],"error.":[50],"Moreover,":[51],"higher":[53],"output":[54],"isolation":[55],"stable":[57],"and":[60,83,126],"power":[61],"can":[63,100,121],"be":[64,101],"achieved":[65],"by":[66],"additional":[67],"stacking.":[69],"designed":[71],"shows":[77],"a":[78,123],"15":[81],"dB":[82,88,93],"figure":[85],"5":[87],"with":[89],"less":[90],"than":[91],"2":[92],"variation":[95],"while":[96],"controlled":[102],"up":[103],"22.5":[105],"degrees":[106],"from":[107],"30":[108],"GHz":[109],"40":[111],"GHz.":[112],"use":[114],"developed":[117],"LNA":[120],"give":[122],"better":[124],"performance":[128],"resulting":[129],"improved":[132],"array":[133,139],"factor":[134],"beam-forming":[138],"network.":[140]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}