{"id":"https://openalex.org/W2756517849","doi":"https://doi.org/10.1109/iscas.2017.8050851","title":"High-speed driver for SiC MOSFET based on class-E inverter","display_name":"High-speed driver for SiC MOSFET based on class-E inverter","publication_year":2017,"publication_date":"2017-05-01","ids":{"openalex":"https://openalex.org/W2756517849","doi":"https://doi.org/10.1109/iscas.2017.8050851","mag":"2756517849"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2017.8050851","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2017.8050851","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101025856","display_name":"Yuchong Sun","orcid":null},"institutions":[{"id":"https://openalex.org/I159385669","display_name":"Chiba University","ror":"https://ror.org/01hjzeq58","country_code":"JP","type":"education","lineage":["https://openalex.org/I159385669"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuchong Sun","raw_affiliation_strings":["Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan","institution_ids":["https://openalex.org/I159385669"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111532367","display_name":"Ryoko Sugano","orcid":null},"institutions":[{"id":"https://openalex.org/I159385669","display_name":"Chiba University","ror":"https://ror.org/01hjzeq58","country_code":"JP","type":"education","lineage":["https://openalex.org/I159385669"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryoko Sugano","raw_affiliation_strings":["Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan","institution_ids":["https://openalex.org/I159385669"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064300757","display_name":"Xiuqin Wei","orcid":"https://orcid.org/0000-0001-8212-5787"},"institutions":[{"id":"https://openalex.org/I8488066","display_name":"Chiba Institute of Technology","ror":"https://ror.org/00qwnam72","country_code":"JP","type":"education","lineage":["https://openalex.org/I8488066"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Xiuqin Wei","raw_affiliation_strings":["Dept. of Electrical Engineering, Chiba Institue of Technology, Chiba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, Chiba Institue of Technology, Chiba, Japan","institution_ids":["https://openalex.org/I8488066"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014682600","display_name":"Takashi Hikihara","orcid":"https://orcid.org/0000-0002-0029-4358"},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takashi Hikihara","raw_affiliation_strings":["Dept. of Electrical Engineering, Kyoto University, Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, Kyoto University, Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5021227619","display_name":"Hiroo Sekiya","orcid":"https://orcid.org/0000-0003-3557-1463"},"institutions":[{"id":"https://openalex.org/I159385669","display_name":"Chiba University","ror":"https://ror.org/01hjzeq58","country_code":"JP","type":"education","lineage":["https://openalex.org/I159385669"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroo Sekiya","raw_affiliation_strings":["Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan","institution_ids":["https://openalex.org/I159385669"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.896,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.84718118,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7153047323226929},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.5372621417045593},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.530885636806488},{"id":"https://openalex.org/keywords/class","display_name":"Class (philosophy)","score":0.4876490831375122},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.4355275332927704},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38953930139541626},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3774375915527344},{"id":"https://openalex.org/keywords/automotive-engineering","display_name":"Automotive engineering","score":0.32845795154571533},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.24408596754074097},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2362595796585083},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17743656039237976},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17350348830223083},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.09423047304153442}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7153047323226929},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5372621417045593},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.530885636806488},{"id":"https://openalex.org/C2777212361","wikidata":"https://www.wikidata.org/wiki/Q5127848","display_name":"Class (philosophy)","level":2,"score":0.4876490831375122},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.4355275332927704},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38953930139541626},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3774375915527344},{"id":"https://openalex.org/C171146098","wikidata":"https://www.wikidata.org/wiki/Q124192","display_name":"Automotive engineering","level":1,"score":0.32845795154571533},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.24408596754074097},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2362595796585083},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17743656039237976},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17350348830223083},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.09423047304153442},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2017.8050851","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2017.8050851","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6800000071525574}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1523595781","https://openalex.org/W1582527544","https://openalex.org/W2004512974","https://openalex.org/W2057690305","https://openalex.org/W2077661343","https://openalex.org/W2103909446","https://openalex.org/W2143310461","https://openalex.org/W2243630211","https://openalex.org/W2556771538"],"related_works":["https://openalex.org/W3215618563","https://openalex.org/W2201097579","https://openalex.org/W1975911543","https://openalex.org/W1585806363","https://openalex.org/W1967366640","https://openalex.org/W4297984667","https://openalex.org/W2113375040","https://openalex.org/W2587816400","https://openalex.org/W3184774783","https://openalex.org/W2516734518"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,56],"high-speed":[4],"resonant":[5,31],"driver":[6,35,105],"for":[7,36],"silicon":[8],"carbide":[9],"(SiC)":[10],"MOSFET,":[11],"which":[12,54,97],"is":[13,67],"based":[14],"on":[15],"the":[16,30,34,38,47,51,76,81,93,103],"class-E":[17],"inverter.":[18],"Gate-to-source":[19],"resistance":[20],"and":[21,87,100,106],"input":[22],"capacitance":[23],"of":[24,33,102],"SiC":[25,82],"MOSFET":[26,83],"are":[27,44],"included":[28],"in":[29,50,69,75],"circuit":[32],"avoiding":[37],"driving-signal":[39],"strain.":[40],"Additionally,":[41],"clamp":[42],"diodes":[43],"added":[45],"to":[46,79],"output":[48],"filter":[49],"proposed":[52,104],"driver,":[53],"makes":[55],"square-waveform-like":[57],"driving":[58],"signal.":[59],"The":[60],"design":[61,108],"example":[62],"along":[63],"with":[64,91],"experimental":[65],"waveforms":[66],"shown":[68],"this":[70],"paper.":[71],"It":[72],"was":[73],"possible":[74],"laboratory":[77],"experiments":[78],"drive":[80],"at":[84],"7":[85],"MHz":[86,89],"13":[88],"frequencies":[90],"satisfying":[92],"zero-voltage":[94],"switching":[95],"condition,":[96],"showed":[98],"validity":[99],"effectiveness":[101],"its":[107],"procedure.":[109]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}